KR970077222A - 반도체소자의 제조방법 - Google Patents

반도체소자의 제조방법 Download PDF

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Publication number
KR970077222A
KR970077222A KR1019960018366A KR19960018366A KR970077222A KR 970077222 A KR970077222 A KR 970077222A KR 1019960018366 A KR1019960018366 A KR 1019960018366A KR 19960018366 A KR19960018366 A KR 19960018366A KR 970077222 A KR970077222 A KR 970077222A
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KR
South Korea
Prior art keywords
polysilicon
gate oxide
oxide film
polysilicon layer
nitriding
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KR1019960018366A
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English (en)
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KR100399957B1 (ko
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최병대
김의식
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김주용
현대전자산업 주식회사
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Priority to KR1019960018366A priority Critical patent/KR100399957B1/ko
Publication of KR970077222A publication Critical patent/KR970077222A/ko
Application granted granted Critical
Publication of KR100399957B1 publication Critical patent/KR100399957B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 폴리실리콘을 이온주입을 이용하여 게이트전극화하는 방법에 관한 것으로, 반도체기판상에 게이트산화막을 형성하는 단계와, 상기 게이트산화막의 상부 소정부분을 질화시키고 시간지연없이 연속적으로 폴리실리콘을 증착하는 단계, 상기 폴리실리콘층에 소정의 도판트를 이온주입하는 단계, 상기 폴리실리콘층을 안정화시키면서 주입된 도판트들을 활성화시키는 단계를 포함하는 반도체소자 제조방법을 제공함으로써 게이트전극으로 사용되는 폴리실리콘을 전극화하기 위해 진행해야 하는 고온, 장시간의 폴리실리콘 도핑 공정을 이용하지 않고 이온주입을 이용함으로써 공정시간을 단축하고 공정온도를 감소시킨다.

Description

반도체소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 반도체소자의 게이트 제조방법을 도시한 공정순서도이다.

Claims (5)

  1. 반도체기판상에 게이트산화막을 형성하는 단계와, 상기 게이트산화막의 상부 소정부분을 질화시키고 시간지연없이 연속적응로 폴리실리콘을 증착하는 단계, 상기 폴리실리콘층에 소정의 도판트를 이온주입하는 단계, 상기 폴리실리콘층을 안정화시키면서 주입된 도판트들을 활성화시키는 단계를 포함하는 것을 특징으로 하는 반도체소자 제조방법.
  2. 제1항에 있어서, 상기 게이트산호막은 습식산화 방식에 의해 형성하는 것을 특징으로 하는 반도체소자 제조방법.
  3. 제1항에 있어서, 상기 게이트산화막의 질화는 N2O 분위기에서의 어닐링에 의해 행하는 것을 특징으로 하는 반도체소자 제조방법.
  4. 제1항에 있어서, 상기 질화에 의해 상기 게이트산화막 윗부분에 SixNyOz가 형성되는 것을 특징으로 하는 반도체소자 제조방법.
  5. 제1항에 있어서, 상기 폴리실리콘층을 안정화시키면서 도판트를 활성화시키는 단계는 고온에서의 폴리실리콘 산화공정 또는 어닐링에 의해 행하는 것을 특징으로 하는 반도체소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960018366A 1996-05-28 1996-05-28 반도체소자의제조방법 KR100399957B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960018366A KR100399957B1 (ko) 1996-05-28 1996-05-28 반도체소자의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960018366A KR100399957B1 (ko) 1996-05-28 1996-05-28 반도체소자의제조방법

Publications (2)

Publication Number Publication Date
KR970077222A true KR970077222A (ko) 1997-12-12
KR100399957B1 KR100399957B1 (ko) 2003-12-24

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DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement

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