KR970063562A - 하이브리드 코일 인덕터 및 다중 반경 돔 실링을 갖는 rf 플라즈마 반응기 - Google Patents

하이브리드 코일 인덕터 및 다중 반경 돔 실링을 갖는 rf 플라즈마 반응기 Download PDF

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Publication number
KR970063562A
KR970063562A KR1019970003267A KR19970003267A KR970063562A KR 970063562 A KR970063562 A KR 970063562A KR 1019970003267 A KR1019970003267 A KR 1019970003267A KR 19970003267 A KR19970003267 A KR 19970003267A KR 970063562 A KR970063562 A KR 970063562A
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KR
South Korea
Prior art keywords
plasma reactor
base
seal
height
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970003267A
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English (en)
Korean (ko)
Inventor
하나와 히로지
지. 윈 제랄드
엠.마 다이아나
엠. 샐즈맨 필립
케이. 로웬하르트 피터
자오 알렌
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 조셉 제이. 스위니, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 조셉 제이. 스위니
Publication of KR970063562A publication Critical patent/KR970063562A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
KR1019970003267A 1996-02-02 1997-02-03 하이브리드 코일 인덕터 및 다중 반경 돔 실링을 갖는 rf 플라즈마 반응기 Withdrawn KR970063562A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/597,445 US5777289A (en) 1995-02-15 1996-02-02 RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US8/597,445 1996-02-02

Publications (1)

Publication Number Publication Date
KR970063562A true KR970063562A (ko) 1997-09-12

Family

ID=24391536

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970003267A Withdrawn KR970063562A (ko) 1996-02-02 1997-02-03 하이브리드 코일 인덕터 및 다중 반경 돔 실링을 갖는 rf 플라즈마 반응기

Country Status (5)

Country Link
US (2) US5777289A (enExample)
EP (1) EP0788138A3 (enExample)
JP (1) JPH1027785A (enExample)
KR (1) KR970063562A (enExample)
TW (1) TW310444B (enExample)

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US7513971B2 (en) * 2002-03-18 2009-04-07 Applied Materials, Inc. Flat style coil for improved precision etch uniformity
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US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
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JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US20090284421A1 (en) * 2008-05-16 2009-11-19 Yuri Glukhoy RF antenna assembly having an antenna with transversal magnetic field for generation of inductively coupled plasma
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
JP5572329B2 (ja) * 2009-01-15 2014-08-13 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
JP5410950B2 (ja) * 2009-01-15 2014-02-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9653264B2 (en) 2010-12-17 2017-05-16 Mattson Technology, Inc. Inductively coupled plasma source for plasma processing
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
WO2014161199A1 (zh) * 2013-04-03 2014-10-09 Wang Dongjun 等离子体增强原子层沉积设备
JP6750534B2 (ja) 2017-02-24 2020-09-02 東京エレクトロン株式会社 成膜装置
US11521828B2 (en) 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
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Also Published As

Publication number Publication date
JPH1027785A (ja) 1998-01-27
TW310444B (en) 1997-07-11
EP0788138A3 (en) 1998-01-07
US6248250B1 (en) 2001-06-19
EP0788138A2 (en) 1997-08-06
US5777289A (en) 1998-07-07

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19970203

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid