JP2002531914A5 - - Google Patents

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Publication number
JP2002531914A5
JP2002531914A5 JP2000585468A JP2000585468A JP2002531914A5 JP 2002531914 A5 JP2002531914 A5 JP 2002531914A5 JP 2000585468 A JP2000585468 A JP 2000585468A JP 2000585468 A JP2000585468 A JP 2000585468A JP 2002531914 A5 JP2002531914 A5 JP 2002531914A5
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JP
Japan
Prior art keywords
plasma
chamber
source
susceptor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000585468A
Other languages
English (en)
Japanese (ja)
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JP2002531914A (ja
Filing date
Publication date
Priority claimed from US09/201,946 external-priority patent/US20010002584A1/en
Priority claimed from US09/203,025 external-priority patent/US6300227B1/en
Application filed filed Critical
Priority claimed from PCT/US1999/028112 external-priority patent/WO2000032839A1/en
Publication of JP2002531914A publication Critical patent/JP2002531914A/ja
Publication of JP2002531914A5 publication Critical patent/JP2002531914A5/ja
Pending legal-status Critical Current

Links

JP2000585468A 1998-12-01 1999-11-23 プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステム Pending JP2002531914A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/201,946 1998-12-01
US09/201,946 US20010002584A1 (en) 1998-12-01 1998-12-01 Enhanced plasma mode and system for plasma immersion ion implantation
US09/203,025 US6300227B1 (en) 1998-12-01 1998-12-01 Enhanced plasma mode and system for plasma immersion ion implantation
US09/203,025 1998-12-01
PCT/US1999/028112 WO2000032839A1 (en) 1998-12-01 1999-11-23 Enhanced plasma mode, method, and system for plasma immersion ion implantation

Publications (2)

Publication Number Publication Date
JP2002531914A JP2002531914A (ja) 2002-09-24
JP2002531914A5 true JP2002531914A5 (enExample) 2006-12-14

Family

ID=26897230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000585468A Pending JP2002531914A (ja) 1998-12-01 1999-11-23 プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステム

Country Status (4)

Country Link
EP (1) EP1144717A4 (enExample)
JP (1) JP2002531914A (enExample)
AU (1) AU1745700A (enExample)
WO (1) WO2000032839A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6788866B2 (en) 2001-08-17 2004-09-07 Nanogram Corporation Layer materials and planar optical devices
DE10051831A1 (de) * 1999-07-20 2002-05-02 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
JP2003506890A (ja) * 1999-08-06 2003-02-18 アクセリス テクノロジーズ インコーポレーテッド 基板の表面間に均一な注入ドーズ量を与えるためのシステム及び方法
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
WO2002025694A2 (en) * 2000-09-18 2002-03-28 Axcelis Technologies, Inc. System and method for controlling sputtering and deposition effects in a plasma immersion implantation device
US7273533B2 (en) * 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
FR2998707B1 (fr) * 2012-11-27 2016-01-01 Ion Beam Services Implanteur ionique pourvu d'une pluralite de corps de source plasma
JP6214906B2 (ja) * 2013-04-12 2017-10-18 株式会社東芝 レーザイオン源、イオン加速器及び重粒子線治療装置
CN106231769B (zh) * 2016-07-28 2018-08-03 北京航空航天大学 一种用于调节离子推力器放电室等离子体诊断探针测点的装置
JP7499142B2 (ja) * 2020-10-23 2024-06-13 東京エレクトロン株式会社 処理システム及び処理方法
CN115821200A (zh) * 2022-12-05 2023-03-21 哈尔滨工业大学 一种细长不锈钢管内表面高密度等离子体渗氮的方法及装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118785A1 (de) * 1981-05-12 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum dotieren von halbleitermaterial
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
JPS62272443A (ja) * 1986-05-20 1987-11-26 Matsushita Electric Ind Co Ltd イオンド−プ装置
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
DE69226253T2 (de) * 1992-01-24 1998-12-17 Applied Materials, Inc., Santa Clara, Calif. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
WO1993018201A1 (en) * 1992-03-02 1993-09-16 Varian Associates, Inc. Plasma implantation process and equipment
JP2684942B2 (ja) * 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
JP3254069B2 (ja) * 1993-01-12 2002-02-04 東京エレクトロン株式会社 プラズマ装置
JP3338182B2 (ja) * 1994-02-28 2002-10-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5693376A (en) * 1995-06-23 1997-12-02 Wisconsin Alumni Research Foundation Method for plasma source ion implantation and deposition for cylindrical surfaces
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
JP3234490B2 (ja) * 1996-02-29 2001-12-04 三洋電機株式会社 半導体素子の製造方法
US5767628A (en) * 1995-12-20 1998-06-16 International Business Machines Corporation Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP4001649B2 (ja) * 1996-03-14 2007-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
JP2000068254A (ja) * 1998-08-25 2000-03-03 Matsushita Electronics Industry Corp プラズマ処理方法とプラズマ処理装置

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