AU1745700A - Enhanced plasma mode, method, and system for plasma immersion ion implantation - Google Patents

Enhanced plasma mode, method, and system for plasma immersion ion implantation

Info

Publication number
AU1745700A
AU1745700A AU17457/00A AU1745700A AU1745700A AU 1745700 A AU1745700 A AU 1745700A AU 17457/00 A AU17457/00 A AU 17457/00A AU 1745700 A AU1745700 A AU 1745700A AU 1745700 A AU1745700 A AU 1745700A
Authority
AU
Australia
Prior art keywords
plasma
ion implantation
immersion ion
mode
enhanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU17457/00A
Other languages
English (en)
Inventor
Michael A. Bryan
Wei Liu
Ian S. Roth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Genesis Corp
Original Assignee
Silicon Genesis Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/201,946 external-priority patent/US20010002584A1/en
Priority claimed from US09/203,025 external-priority patent/US6300227B1/en
Application filed by Silicon Genesis Corp filed Critical Silicon Genesis Corp
Publication of AU1745700A publication Critical patent/AU1745700A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AU17457/00A 1998-12-01 1999-11-23 Enhanced plasma mode, method, and system for plasma immersion ion implantation Abandoned AU1745700A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09201946 1998-12-01
US09/201,946 US20010002584A1 (en) 1998-12-01 1998-12-01 Enhanced plasma mode and system for plasma immersion ion implantation
US09/203,025 US6300227B1 (en) 1998-12-01 1998-12-01 Enhanced plasma mode and system for plasma immersion ion implantation
US09203025 1998-12-01
PCT/US1999/028112 WO2000032839A1 (en) 1998-12-01 1999-11-23 Enhanced plasma mode, method, and system for plasma immersion ion implantation

Publications (1)

Publication Number Publication Date
AU1745700A true AU1745700A (en) 2000-06-19

Family

ID=26897230

Family Applications (1)

Application Number Title Priority Date Filing Date
AU17457/00A Abandoned AU1745700A (en) 1998-12-01 1999-11-23 Enhanced plasma mode, method, and system for plasma immersion ion implantation

Country Status (4)

Country Link
EP (1) EP1144717A4 (enExample)
JP (1) JP2002531914A (enExample)
AU (1) AU1745700A (enExample)
WO (1) WO2000032839A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6788866B2 (en) 2001-08-17 2004-09-07 Nanogram Corporation Layer materials and planar optical devices
DE10051831A1 (de) * 1999-07-20 2002-05-02 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
JP2003506890A (ja) * 1999-08-06 2003-02-18 アクセリス テクノロジーズ インコーポレーテッド 基板の表面間に均一な注入ドーズ量を与えるためのシステム及び方法
US6305316B1 (en) * 2000-07-20 2001-10-23 Axcelis Technologies, Inc. Integrated power oscillator RF source of plasma immersion ion implantation system
WO2002025694A2 (en) * 2000-09-18 2002-03-28 Axcelis Technologies, Inc. System and method for controlling sputtering and deposition effects in a plasma immersion implantation device
US7273533B2 (en) * 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
FR2998707B1 (fr) * 2012-11-27 2016-01-01 Ion Beam Services Implanteur ionique pourvu d'une pluralite de corps de source plasma
JP6214906B2 (ja) * 2013-04-12 2017-10-18 株式会社東芝 レーザイオン源、イオン加速器及び重粒子線治療装置
CN106231769B (zh) * 2016-07-28 2018-08-03 北京航空航天大学 一种用于调节离子推力器放电室等离子体诊断探针测点的装置
JP7499142B2 (ja) * 2020-10-23 2024-06-13 東京エレクトロン株式会社 処理システム及び処理方法
CN115821200A (zh) * 2022-12-05 2023-03-21 哈尔滨工业大学 一种细长不锈钢管内表面高密度等离子体渗氮的方法及装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118785A1 (de) * 1981-05-12 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Verfahren und vorrichtung zum dotieren von halbleitermaterial
FR2583250B1 (fr) * 1985-06-07 1989-06-30 France Etat Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique
JPS62272443A (ja) * 1986-05-20 1987-11-26 Matsushita Electric Ind Co Ltd イオンド−プ装置
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
DE69226253T2 (de) * 1992-01-24 1998-12-17 Applied Materials, Inc., Santa Clara, Calif. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
WO1993018201A1 (en) * 1992-03-02 1993-09-16 Varian Associates, Inc. Plasma implantation process and equipment
JP2684942B2 (ja) * 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
JP3254069B2 (ja) * 1993-01-12 2002-02-04 東京エレクトロン株式会社 プラズマ装置
JP3338182B2 (ja) * 1994-02-28 2002-10-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5693376A (en) * 1995-06-23 1997-12-02 Wisconsin Alumni Research Foundation Method for plasma source ion implantation and deposition for cylindrical surfaces
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
JP3234490B2 (ja) * 1996-02-29 2001-12-04 三洋電機株式会社 半導体素子の製造方法
US5767628A (en) * 1995-12-20 1998-06-16 International Business Machines Corporation Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP4001649B2 (ja) * 1996-03-14 2007-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
JP2000068254A (ja) * 1998-08-25 2000-03-03 Matsushita Electronics Industry Corp プラズマ処理方法とプラズマ処理装置

Also Published As

Publication number Publication date
JP2002531914A (ja) 2002-09-24
EP1144717A4 (en) 2003-04-16
EP1144717A1 (en) 2001-10-17
WO2000032839A1 (en) 2000-06-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase