JP2002531914A - プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステム - Google Patents
プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステムInfo
- Publication number
- JP2002531914A JP2002531914A JP2000585468A JP2000585468A JP2002531914A JP 2002531914 A JP2002531914 A JP 2002531914A JP 2000585468 A JP2000585468 A JP 2000585468A JP 2000585468 A JP2000585468 A JP 2000585468A JP 2002531914 A JP2002531914 A JP 2002531914A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- source
- chamber
- susceptor
- electromagnetic source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005468 ion implantation Methods 0.000 title description 21
- 238000007654 immersion Methods 0.000 title description 16
- 238000012545 processing Methods 0.000 claims description 39
- 239000001257 hydrogen Substances 0.000 claims description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims description 38
- 239000002245 particle Substances 0.000 claims description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 35
- 230000001939 inductive effect Effects 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 238000003672 processing method Methods 0.000 abstract description 3
- 210000002381 plasma Anatomy 0.000 description 208
- 239000000758 substrate Substances 0.000 description 44
- 239000000523 sample Substances 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 29
- 150000002500 ions Chemical class 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 19
- 150000002431 hydrogen Chemical class 0.000 description 15
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 241000894007 species Species 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000012771 pancakes Nutrition 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 102100033041 Carbonic anhydrase 13 Human genes 0.000 description 1
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 101000867860 Homo sapiens Carbonic anhydrase 13 Proteins 0.000 description 1
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 244000144985 peep Species 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/201,946 | 1998-12-01 | ||
| US09/201,946 US20010002584A1 (en) | 1998-12-01 | 1998-12-01 | Enhanced plasma mode and system for plasma immersion ion implantation |
| US09/203,025 US6300227B1 (en) | 1998-12-01 | 1998-12-01 | Enhanced plasma mode and system for plasma immersion ion implantation |
| US09/203,025 | 1998-12-01 | ||
| PCT/US1999/028112 WO2000032839A1 (en) | 1998-12-01 | 1999-11-23 | Enhanced plasma mode, method, and system for plasma immersion ion implantation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002531914A true JP2002531914A (ja) | 2002-09-24 |
| JP2002531914A5 JP2002531914A5 (enExample) | 2006-12-14 |
Family
ID=26897230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000585468A Pending JP2002531914A (ja) | 1998-12-01 | 1999-11-23 | プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステム |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1144717A4 (enExample) |
| JP (1) | JP2002531914A (enExample) |
| AU (1) | AU1745700A (enExample) |
| WO (1) | WO2000032839A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007525798A (ja) * | 2003-11-19 | 2007-09-06 | 東京エレクトロン株式会社 | 局所的に効果的な誘導プラズマ結合を備えたプラズマ処理システム |
| JP2014207131A (ja) * | 2013-04-12 | 2014-10-30 | 株式会社東芝 | レーザイオン源、イオン加速器及び重粒子線治療装置 |
| JP2015535648A (ja) * | 2012-11-27 | 2015-12-14 | イオン ビーム サービス | 複数のプラズマ源部を備えたイオン注入装置 |
| KR20220054535A (ko) * | 2020-10-23 | 2022-05-03 | 도쿄엘렉트론가부시키가이샤 | 처리 시스템 및 처리 방법 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6788866B2 (en) | 2001-08-17 | 2004-09-07 | Nanogram Corporation | Layer materials and planar optical devices |
| DE10051831A1 (de) * | 1999-07-20 | 2002-05-02 | Bosch Gmbh Robert | Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas |
| JP2003506890A (ja) * | 1999-08-06 | 2003-02-18 | アクセリス テクノロジーズ インコーポレーテッド | 基板の表面間に均一な注入ドーズ量を与えるためのシステム及び方法 |
| US6305316B1 (en) * | 2000-07-20 | 2001-10-23 | Axcelis Technologies, Inc. | Integrated power oscillator RF source of plasma immersion ion implantation system |
| WO2002025694A2 (en) * | 2000-09-18 | 2002-03-28 | Axcelis Technologies, Inc. | System and method for controlling sputtering and deposition effects in a plasma immersion implantation device |
| CN106231769B (zh) * | 2016-07-28 | 2018-08-03 | 北京航空航天大学 | 一种用于调节离子推力器放电室等离子体诊断探针测点的装置 |
| CN115821200A (zh) * | 2022-12-05 | 2023-03-21 | 哈尔滨工业大学 | 一种细长不锈钢管内表面高密度等离子体渗氮的方法及装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197824A (en) * | 1981-05-12 | 1982-12-04 | Siemens Ag | Method and device for filling impurity to semiconductor material |
| JPS62272443A (ja) * | 1986-05-20 | 1987-11-26 | Matsushita Electric Ind Co Ltd | イオンド−プ装置 |
| JPS642322A (en) * | 1987-06-25 | 1989-01-06 | Toshiba Corp | Plasma etching device |
| JPH06267903A (ja) * | 1993-01-12 | 1994-09-22 | Tokyo Electron Ltd | プラズマ装置 |
| JPH07288329A (ja) * | 1994-02-28 | 1995-10-31 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
| JPH09237900A (ja) * | 1996-02-29 | 1997-09-09 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
| JPH09251964A (ja) * | 1996-03-14 | 1997-09-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000068254A (ja) * | 1998-08-25 | 2000-03-03 | Matsushita Electronics Industry Corp | プラズマ処理方法とプラズマ処理装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
| US5032205A (en) * | 1989-05-05 | 1991-07-16 | Wisconsin Alumni Research Foundation | Plasma etching apparatus with surface magnetic fields |
| US5178739A (en) * | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| DE69226253T2 (de) * | 1992-01-24 | 1998-12-17 | Applied Materials, Inc., Santa Clara, Calif. | Plasmaätzverfahren und Reaktor zur Plasmabearbeitung |
| WO1993018201A1 (en) * | 1992-03-02 | 1993-09-16 | Varian Associates, Inc. | Plasma implantation process and equipment |
| JP2684942B2 (ja) * | 1992-11-30 | 1997-12-03 | 日本電気株式会社 | 化学気相成長法と化学気相成長装置および多層配線の製造方法 |
| US5693376A (en) * | 1995-06-23 | 1997-12-02 | Wisconsin Alumni Research Foundation | Method for plasma source ion implantation and deposition for cylindrical surfaces |
| US5767628A (en) * | 1995-12-20 | 1998-06-16 | International Business Machines Corporation | Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US5669975A (en) * | 1996-03-27 | 1997-09-23 | Sony Corporation | Plasma producing method and apparatus including an inductively-coupled plasma source |
-
1999
- 1999-11-23 JP JP2000585468A patent/JP2002531914A/ja active Pending
- 1999-11-23 AU AU17457/00A patent/AU1745700A/en not_active Abandoned
- 1999-11-23 EP EP99960595A patent/EP1144717A4/en not_active Withdrawn
- 1999-11-23 WO PCT/US1999/028112 patent/WO2000032839A1/en not_active Ceased
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197824A (en) * | 1981-05-12 | 1982-12-04 | Siemens Ag | Method and device for filling impurity to semiconductor material |
| JPS62272443A (ja) * | 1986-05-20 | 1987-11-26 | Matsushita Electric Ind Co Ltd | イオンド−プ装置 |
| JPS642322A (en) * | 1987-06-25 | 1989-01-06 | Toshiba Corp | Plasma etching device |
| JPH06267903A (ja) * | 1993-01-12 | 1994-09-22 | Tokyo Electron Ltd | プラズマ装置 |
| JPH07288329A (ja) * | 1994-02-28 | 1995-10-31 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
| JPH11510302A (ja) * | 1995-07-19 | 1999-09-07 | チャン，チュン | 大きな領域の基板のプラズマ処理のためのシステム |
| JPH09237900A (ja) * | 1996-02-29 | 1997-09-09 | Sanyo Electric Co Ltd | 半導体素子の製造方法 |
| JPH09251964A (ja) * | 1996-03-14 | 1997-09-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000068254A (ja) * | 1998-08-25 | 2000-03-03 | Matsushita Electronics Industry Corp | プラズマ処理方法とプラズマ処理装置 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007525798A (ja) * | 2003-11-19 | 2007-09-06 | 東京エレクトロン株式会社 | 局所的に効果的な誘導プラズマ結合を備えたプラズマ処理システム |
| JP2015535648A (ja) * | 2012-11-27 | 2015-12-14 | イオン ビーム サービス | 複数のプラズマ源部を備えたイオン注入装置 |
| JP2014207131A (ja) * | 2013-04-12 | 2014-10-30 | 株式会社東芝 | レーザイオン源、イオン加速器及び重粒子線治療装置 |
| KR20220054535A (ko) * | 2020-10-23 | 2022-05-03 | 도쿄엘렉트론가부시키가이샤 | 처리 시스템 및 처리 방법 |
| JP2022069274A (ja) * | 2020-10-23 | 2022-05-11 | 東京エレクトロン株式会社 | 処理システム及び処理方法 |
| JP7499142B2 (ja) | 2020-10-23 | 2024-06-13 | 東京エレクトロン株式会社 | 処理システム及び処理方法 |
| JP2024119885A (ja) * | 2020-10-23 | 2024-09-03 | 東京エレクトロン株式会社 | 基板処理システム |
| JP7727795B2 (ja) | 2020-10-23 | 2025-08-21 | 東京エレクトロン株式会社 | 基板処理システム |
| KR102867170B1 (ko) * | 2020-10-23 | 2025-10-01 | 도쿄엘렉트론가부시키가이샤 | 처리 시스템 및 처리 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1144717A4 (en) | 2003-04-16 |
| EP1144717A1 (en) | 2001-10-17 |
| WO2000032839A1 (en) | 2000-06-08 |
| AU1745700A (en) | 2000-06-19 |
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