JP2015535648A - 複数のプラズマ源部を備えたイオン注入装置 - Google Patents
複数のプラズマ源部を備えたイオン注入装置 Download PDFInfo
- Publication number
- JP2015535648A JP2015535648A JP2015543493A JP2015543493A JP2015535648A JP 2015535648 A JP2015535648 A JP 2015535648A JP 2015543493 A JP2015543493 A JP 2015543493A JP 2015543493 A JP2015543493 A JP 2015543493A JP 2015535648 A JP2015535648 A JP 2015535648A
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- plasma source
- implantation apparatus
- plasma
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
- H01J2237/3365—Plasma source implantation
Abstract
Description
その正極を接地したDC電圧発生器SOUと、
電圧発生器GENに並列なキャパシタCtと、
その第1の極を電圧発生器SOUの負極に接続し、その第2の極を電源の出力に接続した第1のスイッチIT1と、
その第1の極を同様に上記出力に接続し、その第2の極を中和端子に接続した第2のスイッチIT2と、を含み、この中和端子は、接地されるか、放電抵抗を介して(数十ボルトの)低い電圧へ接続される。
中性化段階、及び
消火段階
プラズマ電源ALPは非作動状態である。
Claims (6)
- 高圧電流路(PET)を介して基板電源(ALT)へ接続された基板支持台 (PPS)を内部に有する容器(ENV)を含むイオン注入装置であって、該容器(ENV)はポンプ手段(PP、PS)を備え、該容器(ENV)は少なくとも2個の、障害物を含まず、該基板支持台 (PPS)に面した筒状プラズマ源部(CS1、CS2、CS3、CS4)を有し、プラズマ源部(CS1、CS2、CS3、CS4)ごとに少なくとも一つの閉じ込め回路(BCI1−BCS1、BCI2−BCS2)を含むイオン注入装置。
- プラズマ源部(CS1、CS2、CS3、CS4)のそれぞれが、外部の高周波アンテナ(ANT1、ANT2、ANT3、ANT4)を備えた請求項1に記載のイオン注入装置。
- 高周波アンテナ(ANT1、ANT2、ANT3、ANT4)の全てに対して共通の高周波発生器(RF)を含む請求項1または2に記載のイオン注入装置。
- 該高周波発生器(RF)と該高周波アンテナ(ANT1、ANT2、ANT3、ANT4)との間に配置された単一のチューニングボックス(BA)を含む請求項3に記載のイオン注入装置。
- 該高周波発生器(RF)から下流に、チューニングボックス(BA)とそれに続く分離器(SEP)とを含む請求項3に記載のイオン注入装置。
- 該高周波発生器(RF)から下流に、分離器(SEP)と、それに続く、プラズマ源部(CS1、CS2、CS3、CS4)の数に等しい数のチューニングボックス(BA1、BA2、BA3、BA4)とを含む請求項3に記載のイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1203188A FR2998707B1 (fr) | 2012-11-27 | 2012-11-27 | Implanteur ionique pourvu d'une pluralite de corps de source plasma |
FR1203188 | 2012-11-27 | ||
PCT/FR2013/000308 WO2014083246A1 (fr) | 2012-11-27 | 2013-11-25 | Implanteur ionique pourvu d'une pluralité de corps de source plasma |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015535648A true JP2015535648A (ja) | 2015-12-14 |
JP6419078B2 JP6419078B2 (ja) | 2018-11-07 |
Family
ID=47878114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015543493A Active JP6419078B2 (ja) | 2012-11-27 | 2013-11-25 | 複数のプラズマ源部を備えたイオン注入装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9520274B2 (ja) |
EP (1) | EP2926362B1 (ja) |
JP (1) | JP6419078B2 (ja) |
KR (1) | KR102150337B1 (ja) |
CN (1) | CN104937691B (ja) |
FR (1) | FR2998707B1 (ja) |
SG (1) | SG11201504147UA (ja) |
WO (1) | WO2014083246A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981193B1 (fr) * | 2011-10-06 | 2014-05-23 | Ion Beam Services | Procede de commande d'un implanteur ionique en mode immersion plasma. |
FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
US20180174801A1 (en) * | 2016-12-21 | 2018-06-21 | Ulvac Technologies, Inc. | Apparatuses and methods for surface treatment |
CN109195298B (zh) * | 2018-09-06 | 2020-03-03 | 西安交通大学 | 一种负氢离子的生成装置及方法 |
CN114600222A (zh) * | 2019-09-20 | 2022-06-07 | 恩特格里斯公司 | 用于离子植入的等离子体浸渍方法 |
KR20220006345A (ko) | 2020-07-08 | 2022-01-17 | 에스케이하이닉스 주식회사 | 이온 소스 헤드 및 이를 포함하는 이온 주입 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0368773A (ja) * | 1989-06-13 | 1991-03-25 | Plasma & Materials Technol Inc | 高密度プラズマ蒸着およびエッチング装置 |
JPH0855699A (ja) * | 1994-08-11 | 1996-02-27 | Aneruba Kk | プラズマ処理装置 |
JP2002531914A (ja) * | 1998-12-01 | 2002-09-24 | シリコン ジェネシス コーポレイション | プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステム |
JP2004031566A (ja) * | 2002-06-25 | 2004-01-29 | Yac Co Ltd | プラズマ処理装置 |
JP2008504434A (ja) * | 2004-06-16 | 2008-02-14 | イオン ビーム サービス | 荷電効果を制限するように設計されたイオン注入機電源装置 |
JP2012049065A (ja) * | 2010-08-30 | 2012-03-08 | Nissin Electric Co Ltd | プラズマ処理装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2052080C (en) * | 1990-10-10 | 1997-01-14 | Jesse N. Matossian | Plasma source arrangement for ion implantation |
US5296272A (en) * | 1990-10-10 | 1994-03-22 | Hughes Aircraft Company | Method of implanting ions from a plasma into an object |
US6274459B1 (en) * | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
US6300227B1 (en) * | 1998-12-01 | 2001-10-09 | Silicon Genesis Corporation | Enhanced plasma mode and system for plasma immersion ion implantation |
US20010017109A1 (en) * | 1998-12-01 | 2001-08-30 | Wei Liu | Enhanced plasma mode and system for plasma immersion ion implantation |
US6237527B1 (en) | 1999-08-06 | 2001-05-29 | Axcelis Technologies, Inc. | System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate |
FR2871812B1 (fr) * | 2004-06-16 | 2008-09-05 | Ion Beam Services Sa | Implanteur ionique fonctionnant en mode plasma pulse |
CN2887889Y (zh) * | 2006-03-06 | 2007-04-11 | 中国科学院物理研究所 | 多元弧等离子体全方位离子注入与沉积的表面处理装置 |
CN201228282Y (zh) * | 2007-12-24 | 2009-04-29 | 杨思泽 | 脉冲高能量密度等离子体辅助多源复合材料表面改性装置 |
WO2011056815A2 (en) * | 2009-11-04 | 2011-05-12 | Applied Materials, Inc. | Plasma ion implantation process for patterned disc media applications |
DE102010060910A1 (de) * | 2010-11-30 | 2012-05-31 | Roth & Rau Ag | Verfahren und Vorrichtung zur Ionenimplantation |
-
2012
- 2012-11-27 FR FR1203188A patent/FR2998707B1/fr not_active Expired - Fee Related
-
2013
- 2013-11-25 WO PCT/FR2013/000308 patent/WO2014083246A1/fr active Application Filing
- 2013-11-25 US US14/647,193 patent/US9520274B2/en active Active
- 2013-11-25 KR KR1020157015033A patent/KR102150337B1/ko active IP Right Grant
- 2013-11-25 SG SG11201504147UA patent/SG11201504147UA/en unknown
- 2013-11-25 CN CN201380069786.6A patent/CN104937691B/zh active Active
- 2013-11-25 EP EP13818250.6A patent/EP2926362B1/fr active Active
- 2013-11-25 JP JP2015543493A patent/JP6419078B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0368773A (ja) * | 1989-06-13 | 1991-03-25 | Plasma & Materials Technol Inc | 高密度プラズマ蒸着およびエッチング装置 |
JPH0855699A (ja) * | 1994-08-11 | 1996-02-27 | Aneruba Kk | プラズマ処理装置 |
JP2002531914A (ja) * | 1998-12-01 | 2002-09-24 | シリコン ジェネシス コーポレイション | プラズマ浸漬イオン注入用増強プラズマモード、方法およびシステム |
JP2004031566A (ja) * | 2002-06-25 | 2004-01-29 | Yac Co Ltd | プラズマ処理装置 |
JP2008504434A (ja) * | 2004-06-16 | 2008-02-14 | イオン ビーム サービス | 荷電効果を制限するように設計されたイオン注入機電源装置 |
JP2012049065A (ja) * | 2010-08-30 | 2012-03-08 | Nissin Electric Co Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
SG11201504147UA (en) | 2015-07-30 |
US20150325412A1 (en) | 2015-11-12 |
FR2998707A1 (fr) | 2014-05-30 |
KR102150337B1 (ko) | 2020-09-01 |
KR20150088265A (ko) | 2015-07-31 |
CN104937691A (zh) | 2015-09-23 |
JP6419078B2 (ja) | 2018-11-07 |
WO2014083246A1 (fr) | 2014-06-05 |
FR2998707B1 (fr) | 2016-01-01 |
US9520274B2 (en) | 2016-12-13 |
EP2926362B1 (fr) | 2018-07-25 |
EP2926362A1 (fr) | 2015-10-07 |
CN104937691B (zh) | 2018-04-17 |
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