SG11201504147UA - Ion implanter provided with a plurality of plasma source bodies - Google Patents

Ion implanter provided with a plurality of plasma source bodies

Info

Publication number
SG11201504147UA
SG11201504147UA SG11201504147UA SG11201504147UA SG11201504147UA SG 11201504147U A SG11201504147U A SG 11201504147UA SG 11201504147U A SG11201504147U A SG 11201504147UA SG 11201504147U A SG11201504147U A SG 11201504147UA SG 11201504147U A SG11201504147U A SG 11201504147UA
Authority
SG
Singapore
Prior art keywords
plasma source
ion implanter
source bodies
implanter provided
bodies
Prior art date
Application number
SG11201504147UA
Other languages
English (en)
Inventor
Frank Torregrosa
Laurent Roux
Original Assignee
Ion Beam Services
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Beam Services filed Critical Ion Beam Services
Publication of SG11201504147UA publication Critical patent/SG11201504147UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/336—Changing physical properties of treated surfaces
    • H01J2237/3365—Plasma source implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
SG11201504147UA 2012-11-27 2013-11-25 Ion implanter provided with a plurality of plasma source bodies SG11201504147UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1203188A FR2998707B1 (fr) 2012-11-27 2012-11-27 Implanteur ionique pourvu d'une pluralite de corps de source plasma
PCT/FR2013/000308 WO2014083246A1 (fr) 2012-11-27 2013-11-25 Implanteur ionique pourvu d'une pluralité de corps de source plasma

Publications (1)

Publication Number Publication Date
SG11201504147UA true SG11201504147UA (en) 2015-07-30

Family

ID=47878114

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201504147UA SG11201504147UA (en) 2012-11-27 2013-11-25 Ion implanter provided with a plurality of plasma source bodies

Country Status (8)

Country Link
US (1) US9520274B2 (ja)
EP (1) EP2926362B1 (ja)
JP (1) JP6419078B2 (ja)
KR (1) KR102150337B1 (ja)
CN (1) CN104937691B (ja)
FR (1) FR2998707B1 (ja)
SG (1) SG11201504147UA (ja)
WO (1) WO2014083246A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981193B1 (fr) * 2011-10-06 2014-05-23 Ion Beam Services Procede de commande d'un implanteur ionique en mode immersion plasma.
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US20180174801A1 (en) * 2016-12-21 2018-06-21 Ulvac Technologies, Inc. Apparatuses and methods for surface treatment
CN109195298B (zh) * 2018-09-06 2020-03-03 西安交通大学 一种负氢离子的生成装置及方法
CN114600222A (zh) * 2019-09-20 2022-06-07 恩特格里斯公司 用于离子植入的等离子体浸渍方法
KR20220006345A (ko) 2020-07-08 2022-01-17 에스케이하이닉스 주식회사 이온 소스 헤드 및 이를 포함하는 이온 주입 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
CA2052080C (en) * 1990-10-10 1997-01-14 Jesse N. Matossian Plasma source arrangement for ion implantation
US5296272A (en) * 1990-10-10 1994-03-22 Hughes Aircraft Company Method of implanting ions from a plasma into an object
JP3410558B2 (ja) * 1994-08-11 2003-05-26 アネルバ株式会社 プラズマ処理装置
US6274459B1 (en) * 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US20010017109A1 (en) * 1998-12-01 2001-08-30 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US6300227B1 (en) * 1998-12-01 2001-10-09 Silicon Genesis Corporation Enhanced plasma mode and system for plasma immersion ion implantation
AU1745700A (en) * 1998-12-01 2000-06-19 Silicon Genesis Corporation Enhanced plasma mode, method, and system for plasma immersion ion implantation
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
JP4080793B2 (ja) * 2002-06-25 2008-04-23 ワイエイシイ株式会社 プラズマ処理装置
FR2871934B1 (fr) * 2004-06-16 2006-09-22 Ion Beam Services Sa Alimentation d'implanteur ionique prevue pour une limitation de l'effet de charge
FR2871812B1 (fr) * 2004-06-16 2008-09-05 Ion Beam Services Sa Implanteur ionique fonctionnant en mode plasma pulse
CN2887889Y (zh) * 2006-03-06 2007-04-11 中国科学院物理研究所 多元弧等离子体全方位离子注入与沉积的表面处理装置
CN201228282Y (zh) * 2007-12-24 2009-04-29 杨思泽 脉冲高能量密度等离子体辅助多源复合材料表面改性装置
CN102598131B (zh) * 2009-11-04 2016-04-13 应用材料公司 用于图案化的磁盘媒体应用的等离子体离子注入工艺
JP2012049065A (ja) * 2010-08-30 2012-03-08 Nissin Electric Co Ltd プラズマ処理装置
DE102010060910A1 (de) * 2010-11-30 2012-05-31 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenimplantation

Also Published As

Publication number Publication date
JP6419078B2 (ja) 2018-11-07
US9520274B2 (en) 2016-12-13
US20150325412A1 (en) 2015-11-12
WO2014083246A1 (fr) 2014-06-05
CN104937691B (zh) 2018-04-17
JP2015535648A (ja) 2015-12-14
CN104937691A (zh) 2015-09-23
FR2998707A1 (fr) 2014-05-30
KR102150337B1 (ko) 2020-09-01
EP2926362B1 (fr) 2018-07-25
EP2926362A1 (fr) 2015-10-07
KR20150088265A (ko) 2015-07-31
FR2998707B1 (fr) 2016-01-01

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