JPH1027785A - ハイブリッドインダクタ及びマルチ半径ドーム形シーリングを有するｒｆプラズマリアクタ - Google Patents

ハイブリッドインダクタ及びマルチ半径ドーム形シーリングを有するｒｆプラズマリアクタ

Info

Publication number
JPH1027785A
JPH1027785A JP9055376A JP5537697A JPH1027785A JP H1027785 A JPH1027785 A JP H1027785A JP 9055376 A JP9055376 A JP 9055376A JP 5537697 A JP5537697 A JP 5537697A JP H1027785 A JPH1027785 A JP H1027785A
Authority
JP
Japan
Prior art keywords
inches
wafer
ceiling
plasma reactor
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9055376A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1027785A5 (enExample
Inventor
Hiroji Hanawa
ハナワ ヒロジ
Gerald Z Yin
ズィー． イン ジェラルド
Diana M Ma
エム． マ ダイアナ
Philip M Salzman
エム． サルツマン フィリップ
Peter K Loewenhardt
ケー． ローヴェンハート ピーター
Allen Zhao
ザオ アレン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JPH1027785A publication Critical patent/JPH1027785A/ja
Publication of JPH1027785A5 publication Critical patent/JPH1027785A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP9055376A 1996-02-02 1997-02-03 ハイブリッドインダクタ及びマルチ半径ドーム形シーリングを有するｒｆプラズマリアクタ Pending JPH1027785A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/597,445 US5777289A (en) 1995-02-15 1996-02-02 RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US08/597445 1996-02-02

Publications (2)

Publication Number Publication Date
JPH1027785A true JPH1027785A (ja) 1998-01-27
JPH1027785A5 JPH1027785A5 (enExample) 2004-12-16

Family

ID=24391536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9055376A Pending JPH1027785A (ja) 1996-02-02 1997-02-03 ハイブリッドインダクタ及びマルチ半径ドーム形シーリングを有するｒｆプラズマリアクタ

Country Status (5)

Country Link
US (2) US5777289A (enExample)
EP (1) EP0788138A3 (enExample)
JP (1) JPH1027785A (enExample)
KR (1) KR970063562A (enExample)
TW (1) TW310444B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274502B1 (en) 1998-02-26 2001-08-14 Matsushita Electronics Corporation Method for plasma etching
JP2018139256A (ja) * 2017-02-24 2018-09-06 東京エレクトロン株式会社 成膜装置

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5777289A (en) * 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
WO1997033300A1 (en) * 1996-03-06 1997-09-12 Mattson Technology, Inc. Icp reactor having a conically-shaped plasma-generating section
US5976986A (en) 1996-08-06 1999-11-02 International Business Machines Corp. Low pressure and low power C12 /HC1 process for sub-micron metal etching
US5944899A (en) * 1996-08-22 1999-08-31 Applied Materials, Inc. Inductively coupled plasma processing chamber
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
US6129807A (en) 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
WO1999019526A2 (en) * 1997-10-15 1999-04-22 Tokyo Electron Limited Apparatus and method for adjusting density distribution of a plasma
US6392187B1 (en) * 1997-10-15 2002-05-21 Tokyo Electron Limited Apparatus and method for utilizing a plasma density gradient to produce a flow of particles
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
KR100345053B1 (ko) * 1999-10-01 2002-07-19 삼성전자 주식회사 Ｈｓｇ-ｓｉ 제조 방법 및 상기 방법을 수행하는 장치
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US7513971B2 (en) * 2002-03-18 2009-04-07 Applied Materials, Inc. Flat style coil for improved precision etch uniformity
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
WO2004097919A1 (ja) 2003-05-02 2004-11-11 Tokyo Electron Limited 処理ガス導入機構およびプラズマ処理装置
US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
KR100824974B1 (ko) * 2006-08-17 2008-04-28 (주)아이씨디 플라즈마 처리장치의 안테나
US20080156264A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
TW200830941A (en) * 2007-01-15 2008-07-16 Jehara Corp Plasma generating apparatus
US20080232424A1 (en) * 2007-03-23 2008-09-25 Honeywell International Inc. Hearth plate including side walls defining a processing volume
US8956500B2 (en) * 2007-04-24 2015-02-17 Applied Materials, Inc. Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US20090284421A1 (en) * 2008-05-16 2009-11-19 Yuri Glukhoy RF antenna assembly having an antenna with transversal magnetic field for generation of inductively coupled plasma
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
JP5572329B2 (ja) * 2009-01-15 2014-08-13 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
JP5410950B2 (ja) * 2009-01-15 2014-02-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8222822B2 (en) * 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5451324B2 (ja) * 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9653264B2 (en) 2010-12-17 2017-05-16 Mattson Technology, Inc. Inductively coupled plasma source for plasma processing
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
WO2014161199A1 (zh) * 2013-04-03 2014-10-09 Wang Dongjun 等离子体增强原子层沉积设备
US11521828B2 (en) 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB231197A (en) 1924-03-24 1925-08-06 Peter August Nordling Improvement in hooks and the like
KR900007687B1 (ko) 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
GB8629634D0 (en) 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
US4842683A (en) 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US4872947A (en) 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
DE3738352A1 (de) 1987-11-11 1989-05-24 Technics Plasma Gmbh Filamentloses magnetron-ionenstrahlsystem
DE68924413T2 (de) 1989-01-25 1996-05-02 Ibm Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung.
GB8905075D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Electrode assembly and apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
EP0489407A3 (en) 1990-12-03 1992-07-22 Applied Materials, Inc. Plasma reactor using uhf/vhf resonant antenna source, and processes
EP0584252B1 (en) 1991-05-17 1998-03-04 Lam Research Corporation A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT
KR100255703B1 (ko) 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
US5234529A (en) 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
DE69226253T2 (de) 1992-01-24 1998-12-17 Applied Materials, Inc., Santa Clara, Calif. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5449432A (en) * 1993-10-25 1995-09-12 Applied Materials, Inc. Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
DE69506619T2 (de) 1994-06-02 1999-07-15 Applied Materials, Inc., Santa Clara, Calif. Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US5777289A (en) * 1995-02-15 1998-07-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274502B1 (en) 1998-02-26 2001-08-14 Matsushita Electronics Corporation Method for plasma etching
US6409877B1 (en) 1998-02-26 2002-06-25 Matsushita Electronics Corporation Apparatus and method for plasma etching
JP2018139256A (ja) * 2017-02-24 2018-09-06 東京エレクトロン株式会社 成膜装置
US11155918B2 (en) 2017-02-24 2021-10-26 Tokyo Electron Limited Film forming apparatus

Also Published As

Publication number Publication date
TW310444B (en) 1997-07-11
EP0788138A3 (en) 1998-01-07
US6248250B1 (en) 2001-06-19
EP0788138A2 (en) 1997-08-06
US5777289A (en) 1998-07-07
KR970063562A (ko) 1997-09-12

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