TW310444B - Rf plasma reactor with hybrid conductor and multi-radius dome ceiling - Google Patents
Rf plasma reactor with hybrid conductor and multi-radius dome ceiling Download PDFInfo
- Publication number
- TW310444B TW310444B TW085112360A TW85112360A TW310444B TW 310444 B TW310444 B TW 310444B TW 085112360 A TW085112360 A TW 085112360A TW 85112360 A TW85112360 A TW 85112360A TW 310444 B TW310444 B TW 310444B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- reactor
- coil
- base
- plasma
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title description 9
- 238000004804 winding Methods 0.000 claims abstract description 22
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 7
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- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 4
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- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 235000012766 Cannabis sativa ssp. sativa var. sativa Nutrition 0.000 description 1
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- 229910000831 Steel Inorganic materials 0.000 description 1
- 241001482311 Trionychidae Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008485 antagonism Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
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- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 235000009120 camo Nutrition 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 235000013399 edible fruits Nutrition 0.000 description 1
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- 239000011487 hemp Substances 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- 239000006188 syrup Substances 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/597,445 US5777289A (en) | 1995-02-15 | 1996-02-02 | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW310444B true TW310444B (en) | 1997-07-11 |
Family
ID=24391536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085112360A TW310444B (en) | 1996-02-02 | 1996-10-09 | Rf plasma reactor with hybrid conductor and multi-radius dome ceiling |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5777289A (enExample) |
| EP (1) | EP0788138A3 (enExample) |
| JP (1) | JPH1027785A (enExample) |
| KR (1) | KR970063562A (enExample) |
| TW (1) | TW310444B (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5865896A (en) * | 1993-08-27 | 1999-02-02 | Applied Materials, Inc. | High density plasma CVD reactor with combined inductive and capacitive coupling |
| US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
| US5777289A (en) * | 1995-02-15 | 1998-07-07 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| WO1997033300A1 (en) * | 1996-03-06 | 1997-09-12 | Mattson Technology, Inc. | Icp reactor having a conically-shaped plasma-generating section |
| US5976986A (en) | 1996-08-06 | 1999-11-02 | International Business Machines Corp. | Low pressure and low power C12 /HC1 process for sub-micron metal etching |
| US5944899A (en) * | 1996-08-22 | 1999-08-31 | Applied Materials, Inc. | Inductively coupled plasma processing chamber |
| US6028395A (en) * | 1997-09-16 | 2000-02-22 | Lam Research Corporation | Vacuum plasma processor having coil with added conducting segments to its peripheral part |
| US6129807A (en) | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
| WO1999019526A2 (en) * | 1997-10-15 | 1999-04-22 | Tokyo Electron Limited | Apparatus and method for adjusting density distribution of a plasma |
| US6392187B1 (en) * | 1997-10-15 | 2002-05-21 | Tokyo Electron Limited | Apparatus and method for utilizing a plasma density gradient to produce a flow of particles |
| JP2972707B1 (ja) | 1998-02-26 | 1999-11-08 | 松下電子工業株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
| US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
| US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
| US6287643B1 (en) | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
| KR100345053B1 (ko) * | 1999-10-01 | 2002-07-19 | 삼성전자 주식회사 | Ｈｓｇ-ｓｉ 제조 방법 및 상기 방법을 수행하는 장치 |
| US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
| US7513971B2 (en) * | 2002-03-18 | 2009-04-07 | Applied Materials, Inc. | Flat style coil for improved precision etch uniformity |
| US7232767B2 (en) * | 2003-04-01 | 2007-06-19 | Mattson Technology, Inc. | Slotted electrostatic shield modification for improved etch and CVD process uniformity |
| WO2004097919A1 (ja) | 2003-05-02 | 2004-11-11 | Tokyo Electron Limited | 処理ガス導入機構およびプラズマ処理装置 |
| US20080011426A1 (en) * | 2006-01-30 | 2008-01-17 | Applied Materials, Inc. | Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support |
| KR100824974B1 (ko) * | 2006-08-17 | 2008-04-28 | (주)아이씨디 | 플라즈마 처리장치의 안테나 |
| US20080156264A1 (en) * | 2006-12-27 | 2008-07-03 | Novellus Systems, Inc. | Plasma Generator Apparatus |
| TW200830941A (en) * | 2007-01-15 | 2008-07-16 | Jehara Corp | Plasma generating apparatus |
| US20080232424A1 (en) * | 2007-03-23 | 2008-09-25 | Honeywell International Inc. | Hearth plate including side walls defining a processing volume |
| US8956500B2 (en) * | 2007-04-24 | 2015-02-17 | Applied Materials, Inc. | Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor |
| JP5297048B2 (ja) * | 2008-01-28 | 2013-09-25 | 三菱重工業株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US9591738B2 (en) * | 2008-04-03 | 2017-03-07 | Novellus Systems, Inc. | Plasma generator systems and methods of forming plasma |
| US20090284421A1 (en) * | 2008-05-16 | 2009-11-19 | Yuri Glukhoy | RF antenna assembly having an antenna with transversal magnetic field for generation of inductively coupled plasma |
| US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
| EP2297377B1 (en) | 2008-05-30 | 2017-12-27 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
| US9272359B2 (en) | 2008-05-30 | 2016-03-01 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
| US8575843B2 (en) | 2008-05-30 | 2013-11-05 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
| US8916022B1 (en) | 2008-09-12 | 2014-12-23 | Novellus Systems, Inc. | Plasma generator systems and methods of forming plasma |
| JP5572329B2 (ja) * | 2009-01-15 | 2014-08-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ生成装置 |
| JP5410950B2 (ja) * | 2009-01-15 | 2014-02-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
| JP5451324B2 (ja) * | 2009-11-10 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP5553460B2 (ja) | 2010-03-31 | 2014-07-16 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
| US9653264B2 (en) | 2010-12-17 | 2017-05-16 | Mattson Technology, Inc. | Inductively coupled plasma source for plasma processing |
| US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
| US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
| WO2014161199A1 (zh) * | 2013-04-03 | 2014-10-09 | Wang Dongjun | 等离子体增强原子层沉积设备 |
| JP6750534B2 (ja) | 2017-02-24 | 2020-09-02 | 東京エレクトロン株式会社 | 成膜装置 |
| US11521828B2 (en) | 2017-10-09 | 2022-12-06 | Applied Materials, Inc. | Inductively coupled plasma source |
| US12074390B2 (en) | 2022-11-11 | 2024-08-27 | Tokyo Electron Limited | Parallel resonance antenna for radial plasma control |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB231197A (en) | 1924-03-24 | 1925-08-06 | Peter August Nordling | Improvement in hooks and the like |
| KR900007687B1 (ko) | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
| GB8629634D0 (en) | 1986-12-11 | 1987-01-21 | Dobson C D | Reactive ion & sputter etching |
| US4842683A (en) | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
| US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
| DE3738352A1 (de) | 1987-11-11 | 1989-05-24 | Technics Plasma Gmbh | Filamentloses magnetron-ionenstrahlsystem |
| DE68924413T2 (de) | 1989-01-25 | 1996-05-02 | Ibm | Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung. |
| GB8905075D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
| US5122251A (en) | 1989-06-13 | 1992-06-16 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US4990229A (en) * | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| EP0489407A3 (en) | 1990-12-03 | 1992-07-22 | Applied Materials, Inc. | Plasma reactor using uhf/vhf resonant antenna source, and processes |
| EP0584252B1 (en) | 1991-05-17 | 1998-03-04 | Lam Research Corporation | A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT |
| KR100255703B1 (ko) | 1991-06-27 | 2000-05-01 | 조셉 제이. 스위니 | 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법 |
| US5234529A (en) | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
| DE69226253T2 (de) | 1992-01-24 | 1998-12-17 | Applied Materials, Inc., Santa Clara, Calif. | Plasmaätzverfahren und Reaktor zur Plasmabearbeitung |
| US5280154A (en) | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5277751A (en) | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
| US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
| US5401350A (en) * | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
| US5449432A (en) * | 1993-10-25 | 1995-09-12 | Applied Materials, Inc. | Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication |
| DE69506619T2 (de) | 1994-06-02 | 1999-07-15 | Applied Materials, Inc., Santa Clara, Calif. | Induktiv gekoppelter Plasmareaktor mit einer Elektrode zur Erleichterung der Plasmazündung |
| US5540824A (en) * | 1994-07-18 | 1996-07-30 | Applied Materials | Plasma reactor with multi-section RF coil and isolated conducting lid |
| US5777289A (en) * | 1995-02-15 | 1998-07-07 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
| US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
-
1996
- 1996-02-02 US US08/597,445 patent/US5777289A/en not_active Expired - Lifetime
- 1996-10-09 TW TW085112360A patent/TW310444B/zh active
-
1997
- 1997-02-03 JP JP9055376A patent/JPH1027785A/ja active Pending
- 1997-02-03 KR KR1019970003267A patent/KR970063562A/ko not_active Withdrawn
- 1997-02-03 EP EP97300669A patent/EP0788138A3/en not_active Withdrawn
- 1997-07-21 US US08/897,436 patent/US6248250B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1027785A (ja) | 1998-01-27 |
| EP0788138A3 (en) | 1998-01-07 |
| US6248250B1 (en) | 2001-06-19 |
| EP0788138A2 (en) | 1997-08-06 |
| US5777289A (en) | 1998-07-07 |
| KR970063562A (ko) | 1997-09-12 |
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