KR970030225A - 자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법 - Google Patents

자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법 Download PDF

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Publication number
KR970030225A
KR970030225A KR1019950040239A KR19950040239A KR970030225A KR 970030225 A KR970030225 A KR 970030225A KR 1019950040239 A KR1019950040239 A KR 1019950040239A KR 19950040239 A KR19950040239 A KR 19950040239A KR 970030225 A KR970030225 A KR 970030225A
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KR
South Korea
Prior art keywords
wafer
tape
ultraviolet
backside
semiconductor
Prior art date
Application number
KR1019950040239A
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English (en)
Inventor
심성민
황도윤
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950040239A priority Critical patent/KR970030225A/ko
Priority to JP8210893A priority patent/JPH09148280A/ja
Priority to US08/744,376 priority patent/US5840614A/en
Publication of KR970030225A publication Critical patent/KR970030225A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

본 발명은 비닐 테이프를 사용하여 웨이퍼의 표면을 보호한 채 진행되던 웨이퍼 후면 연마 공정에서 발생되는 불량이나 단점을 해결하기 위한 것으로서, 비닐 테이프 대신에 자외선이 조사되면 접착력이 급격하게 감소하는 자외선 테이프를 웨이퍼의 회로소자가 형성된 표면에 부착하고 췌이퍼의 후면을 연마한 다음, 자외선을 조사하면서 테이프를 웨이퍼로부터 제거함으로써 종래의 단점을 극복하고 간단한 공정 단계를 통해 웨이퍼의 후면 연마가 가능하게 함과 동시에 웨이퍼 절단 공정과 후면 연마공정이 동일한 작업라인에서 이루어지는 것도 가능하게 된다.

Description

자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3a도 내지 제3c도는 본 발명에 따른 웨이퍼 후면 연마 공정의 흐름을 보여주는 재략도.
제4도는 본 발명에 따른 웨이퍼 후면 연마 공정을 사용한 반도체 소자 제조공정의 흐름도.

Claims (5)

  1. 반도체 웨이퍼의 표면에 소정의 회로 소자를 갖는 복수개의 반도체 칩을 형성하는 단계와, 상기 반도체 웨이퍼 표면에 자외선 테이프를 부착하는 단계와, 상기 웨이퍼의 표면의 반대쪽 후면을 연마하는 단계와, 상기 웨이퍼의 표면에 자외선을 조사하면서 상기 자외선 테이프를 떼어내는 단계를 포함하는 반도체 소자 제조 방법.
  2. 제1항에 있어서, 상기 자외선 테이프가 부착되는 반도체 웨이퍼는 EDS(electrical Die Sorting)검사를 통해 상기 복수개의 반도체 칩의 불량/양품 표시가 되어 있는 웨이퍼인 것을 특징으로 하는 반도체 소자 제조 방법.
  3. 제1항에 있어서, 상기 자외선 테이프를 떼어내는 단계 다음에는 상기 자외선 테이프가 제거된 웨이퍼를 개별 칩으로 절단하는 단계를 더 구비하는 것을 특징으로 하는 반도체 소자 제조 방법.
  4. 제3항에 있어서, 상기 웨이퍼 절단 단계는 상기 자외선 테이프 제거 단계와 동일한 작업 라인에서 이루어지는 것을 특징으로 하는 반도체 소자 제조 방법.
  5. 제1항에 있어서, 상기 자외선 테이프를 떼어내는 단계 바로 앞에는 상기 웨이퍼를 개별 칩으로 절단하는 단계를 더 구비하는 것을 특징으로 한는 반도체 소자 제조 방법.
KR1019950040239A 1995-11-08 1995-11-08 자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법 KR970030225A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950040239A KR970030225A (ko) 1995-11-08 1995-11-08 자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법
JP8210893A JPH09148280A (ja) 1995-11-08 1996-08-09 Ｕｖ過敏テープを用いてウェーハの裏面を研磨する半導体素子の製造方法
US08/744,376 US5840614A (en) 1995-11-08 1996-11-07 Method of producing a semiconductor wafer using ultraviolet sensitive tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040239A KR970030225A (ko) 1995-11-08 1995-11-08 자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법

Publications (1)

Publication Number Publication Date
KR970030225A true KR970030225A (ko) 1997-06-26

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ID=19433355

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950040239A KR970030225A (ko) 1995-11-08 1995-11-08 자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법

Country Status (3)

Country Link
US (1) US5840614A (ko)
JP (1) JPH09148280A (ko)
KR (1) KR970030225A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100502406B1 (ko) * 1998-05-11 2005-09-26 삼성전자주식회사 반도체소자 제조용 유브이테이프 제거장치 및 제거방법

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100357178B1 (ko) 1999-05-14 2002-10-18 주식회사 하이닉스반도체 고체 촬상 소자 및 그의 제조 방법
KR100249313B1 (ko) * 1997-07-25 2000-03-15 윤종용 반도체 웨이퍼 테이프 라미네이팅시스템 및 이를 이용한 라미네이팅방법
JP3993918B2 (ja) * 1997-08-25 2007-10-17 富士通株式会社 半導体装置の製造方法
KR100299593B1 (ko) * 1998-01-23 2001-11-30 윤종용 반도체장치 제조용 백 랩핑 인라인 시스템
DE19832629A1 (de) * 1998-07-21 2000-02-03 Daimler Chrysler Ag Klebstoffsystem zur Bildung reversibler Klebeverbindungen
US6162702A (en) * 1999-06-17 2000-12-19 Intersil Corporation Self-supported ultra thin silicon wafer process
US6772510B1 (en) * 2000-08-22 2004-08-10 David J. Corisis Mapable tape apply for LOC and BOC packages
US6524881B1 (en) 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
KR100411256B1 (ko) * 2001-09-05 2003-12-18 삼성전기주식회사 웨이퍼 연마공정 및 이를 이용한 웨이퍼 후면 처리방법
JP4488661B2 (ja) * 2001-09-18 2010-06-23 Ｏｋｉセミコンダクタ株式会社 強誘電体キャパシタの製造方法
JP3770820B2 (ja) * 2001-10-03 2006-04-26 日東電工株式会社 保護テープの貼付け方法
JP2003209082A (ja) * 2002-01-15 2003-07-25 Nitto Denko Corp 保護テープの貼付方法およびその装置並びに保護テープの剥離方法
US7169685B2 (en) 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
US20030199112A1 (en) 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
US7024268B1 (en) 2002-03-22 2006-04-04 Applied Materials Inc. Feedback controlled polishing processes
US6759276B1 (en) 2002-07-30 2004-07-06 Taiwan Semiconductor Manufacturing Company Material to improve CMOS image sensor yield during wafer sawing
US7071032B2 (en) 2002-08-01 2006-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Material to improve image sensor yield during wafer sawing
WO2004048038A1 (en) * 2002-11-22 2004-06-10 Applied Materials Inc. Methods and apparatus for polishing control
US7074109B1 (en) 2003-08-18 2006-07-11 Applied Materials Chemical mechanical polishing control system and method
JP4705450B2 (ja) * 2005-03-11 2011-06-22 株式会社ディスコ ウェーハの保持機構
US20070117259A1 (en) * 2005-11-18 2007-05-24 Semiconductor Components Industries, Llc. Semiconductor component and method of manufacture
CN103378226A (zh) * 2012-04-25 2013-10-30 展晶科技(深圳)有限公司 发光二极管的制造方法
CN106229286B (zh) * 2016-08-30 2020-04-14 浙江中纳晶微电子科技有限公司 薄工件临时键合的加工方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0353546A (ja) * 1989-07-21 1991-03-07 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
JPH04336428A (ja) * 1991-05-13 1992-11-24 Nitto Denko Corp ウエハのテープ貼合わせ剥離装置
EP0547684A3 (en) * 1991-12-18 1996-11-06 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor body comprising a carrier wafer and a monocrystalline semiconducting top layer
JPH06302572A (ja) * 1993-04-12 1994-10-28 Hitachi Ltd 半導体装置の製造方法及びテープ貼付剥離装置
JPH0722358A (ja) * 1993-06-15 1995-01-24 Sharp Corp 半導体装置の製造方法
US5590787A (en) * 1995-01-04 1997-01-07 Micron Technology, Inc. UV light sensitive die-pac for securing semiconductor dies during transport

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100502406B1 (ko) * 1998-05-11 2005-09-26 삼성전자주식회사 반도체소자 제조용 유브이테이프 제거장치 및 제거방법

Also Published As

Publication number Publication date
JPH09148280A (ja) 1997-06-06
US5840614A (en) 1998-11-24

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