CN106229286B - 薄工件临时键合的加工方法 - Google Patents

薄工件临时键合的加工方法 Download PDF

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CN106229286B
CN106229286B CN201610768513.6A CN201610768513A CN106229286B CN 106229286 B CN106229286 B CN 106229286B CN 201610768513 A CN201610768513 A CN 201610768513A CN 106229286 B CN106229286 B CN 106229286B
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workpiece
double
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adhesive tape
sided adhesive
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CN106229286A (zh
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唐昊
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Micro Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

本发明公开了一种薄工件临时键合的加工方法，它包括载板、双面胶带和待加工的工件，所述双面胶带的两面均涂覆有紫外光固化胶，所述的工件和/或载板为透光材质制成，其特征在于：它还包括以下步骤：步骤1、将载板、双面胶带和工件依序堆叠，所述载板通过双面胶带与工件键合；步骤2、对工件进行加工处理；步骤3、紫外光通过透明的工件或载板照射于双面胶带上，用于固化双面胶带上的紫外光固化胶，并使紫外光固化胶的粘性降低；步骤4、将载板和工件解键合。本发明提供一种薄工件临时键合的加工方法，其工件和载板之间的键合过程和解键合过程简单，从而缩减了加工工序、提高了加工效率、降低了加工成本。

Description

薄工件临时键合的加工方法
技术领域
本发明涉及微电子的技术领域，具体地是一种薄工件临时键合的加工方法。
背景技术
薄工件——以晶圆为例，在加工过程中其需要将晶圆键合在厚的载片上，从而便于后续对于晶圆的减薄等工艺的处理，而行业内现有的做法是先通过键合胶将晶圆和载片进行键合，然后对晶圆进行减薄加工，最后将加工完成的晶圆和载片进行解键合，当然还需要对残留的键合胶进行清洁。因此工序较为复杂。另外，部分键合胶的键合过程还伴随着高温烘烤等特殊工序，其不仅能耗高而且加工效率也较低，同时键合胶的去除过程也成本行业内的难题。现有技术中对于键合胶的去除，较多的采用以下两种方法，一、通过溶剂浸泡，使键合胶溶解，二、通过激光照射形成局部高温，从而使键合胶汽化分解。
不难看出，上述现有的加工方法，不仅工序复杂、加工效率低而且加工成本高。
发明内容
本发明所要解决的技术问题是：提供一种薄工件临时键合的加工方法，其工件和载板之间的键合过程和解键合过程简单，从而缩减了加工工序、提高了加工效率、降低了加工成本。
本发明所采取的技术方案是：提供一种薄工件临时键合的加工方法，它包括载板、双面胶带和待加工的工件，所述双面胶带的两面均涂覆有紫外光固化胶，所述的工件和/或载板为透光材质制成，其特征在于：它还包括以下步骤：
步骤1、将载板、双面胶带和工件依序堆叠，所述载板通过双面胶带与工件键合；紫外光固化胶在未照射紫外光的情况下，其粘性较大，可以将载板、双面胶带、工件三者固定。
步骤2、对工件进行加工处理；
步骤3、紫外光通过透明的工件或载板照射于双面胶带上，用于固化双面胶带上的紫外光固化胶，并使紫外光固化胶的粘性降低；通过降低紫外光固化胶的粘性，从而便于后续的载板与工件之间的解键合。
步骤4、将载板和工件解键合。
所述的双面胶带为透光材质制成。透光材质的双面胶带，可以使两面的紫外光固化胶均固化。
所述的载板为刚性的玻璃板。
所述的载板为可弯曲的材质制成。
所述的步骤4包括以下步骤：
步骤4.1、弯曲载板，使载板的任意边缘位置朝背离工件的一侧卷曲形成翘边；
步骤4.2、通过撕扯翘边至剥离载板。通过弯曲的载板设计，可以降低键合过程以及解键合过程的工艺难度，其键合过程可以通过常规的贴片机进行键合，而解键合过程仅仅依靠人工的撕扯即可完成，设备投入少、操作过程简单。
所述双面胶带随载板随载板一同剥离。
所述的工件为晶圆。
采用以上结构后，本发明的薄工件临时键合的加工方法与现有技术相比具有以下优点：首先，紫外光照射双面胶带上的紫外光固化胶至其固化且粘性降低，从而使载板和工件之间的解键合过程简单方便，其次，省去了键合胶的设置，不仅节约了工序和材料成本，同时也减少了后续对于键合胶的处理过程，降低了加工成本，最后，当载板选用可弯曲材质制成时可以使键合过程简单，其利用常规的贴片机即可完成键合过程，无需专用的键合设备，同时在解键合过程中也无需专用的解键合设备，仅仅依靠载板的边缘形成翘边即可撕去载板。
附图说明
图1是本发明的薄工件临时键合的加工方法的流程示意图。
其中，1、载板，2、双面胶带，3、工件。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步说明。
本发明提供一种薄工件临时键合的加工方法，它包括载板1、双面胶带2和待加工的工件3，所述双面胶带2的两面均涂覆有紫外光固化胶，所述的工件3和/或载板1为透光材质制成，其特征在于：它还包括以下步骤：
步骤1、将载板1、双面胶带2和工件3依序堆叠，所述载板1通过双面胶带2与工件3键合；具体地是载板1和工件3通过双面胶带2两侧的紫外光固化胶与双面胶带2粘接；该键合过程可以依靠专利申请号为201410570392.5的晶圆真空键合机及键合方法来实现。
步骤2、对工件3进行加工处理；所述的加工处理一般包括减薄加工。
步骤3、紫外光通过透明的工件或载板照射于双面胶带上，用于固化双面胶带2上的紫外光固化胶，并使紫外光固化胶的粘性降低；
步骤4、将载板1和工件3解键合。所述解键合过程可以利用专利申请号为201510404757.1的晶圆解键合装置。
上述的双面胶带2为片状的胶带基材，其仅仅作为紫外光固化胶的载体，换句话说，双面胶带2的两面涂覆有紫外光固化胶后形成了两面带有粘性的双面胶，其可以将载板1和工件3粘接。
所述的双面胶带2为透光材质制成。其可以使常规的有机材料制成，例如BOPP、PE、PVC等。
所述的载板1为刚性的玻璃板。
所述的载板1为可弯曲的材质制成。其可以是透明的有机材料制成，当工件3为透光材质时，所述的载板1可以选用不透光的金属拨片。也就是说，在保证工件3和载板1中至少一样为透光材料制成即可。
所述的步骤4包括以下步骤：
步骤4.1、弯曲载板1，使载板1的任意边缘位置朝背离工件3的一侧卷曲形成翘边；
步骤4.2、通过撕扯翘边至剥离载板1。
所述双面胶带2随载板1一同剥离。弯曲载板1的过程中，双面胶带2也形成翘边，通过抓取翘边撕扯的过程中，载板1连通双面胶带2一同脱离工件，完成剥离过程。
所述的工件3为晶圆。
以上就本发明较佳的实施例作了说明，但不能理解为是对权利要求的限制。本发明不仅局限于以上实施例，其具体结构允许有变化，凡在本发明独立要求的保护范围内所作的各种变化均在本发明的保护范围内。

Claims (2)

1.一种薄工件临时键合的加工方法，它包括载板(1)、双面胶带(2)和待加工的工件(3)，所述双面胶带(2)的两面均涂覆有紫外光固化胶，所述的工件(3)和/或载板(1)为透光材质制成，其特征在于：它还包括以下步骤：
步骤1、将载板(1)、双面胶带(2)和工件(3)依序堆叠，所述载板(1)通过双面胶带(2)与工件(3)键合；
步骤2、对工件(3)进行减薄加工；
步骤3、紫外光通过透明的工件或载板照射于双面胶带上，用于固化双面胶带(2)上的紫外光固化胶，并使紫外光固化胶的粘性降低；
步骤4、将载板(1)和工件(3)解键合；
所述的双面胶带(2)为透光材质制成；
所述的载板(1)为可弯曲的材质制成；
所述的步骤4包括以下步骤：
步骤4.1、弯曲载板(1)，使载板(1)的任意边缘位置朝背离工件(3)的一侧卷曲形成翘边；
步骤4.2、通过撕扯翘边至剥离载板(1)；
所述双面胶带(2)随载板(1)一同剥离。
2.根据权利要求1所述的薄工件临时键合的加工方法，其特征在于：所述的工件(3)为晶圆。
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CN1741262A (zh) * 2004-08-25 2006-03-01 华新丽华股份有限公司 固定晶片进行制作工序的方法

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KR970030225A (ko) * 1995-11-08 1997-06-26 김광호 자외선 테이프를 사용하여 웨이퍼의 후면을 연마하는 반도체 소장 제조방법
JP2000077361A (ja) * 1998-08-27 2000-03-14 Sharp Corp 半導体ウエハのダイシング方法
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GB2221468A (en) * 1985-12-27 1990-02-07 Fsk Kk Adhesive sheet suitable for use in dicing semiconductor wafers into chips
CN1741262A (zh) * 2004-08-25 2006-03-01 华新丽华股份有限公司 固定晶片进行制作工序的方法

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