KR970009613B1 - Multi-level metalizing method of semiconductor device - Google Patents
Multi-level metalizing method of semiconductor device Download PDFInfo
- Publication number
- KR970009613B1 KR970009613B1 KR93031154A KR930031154A KR970009613B1 KR 970009613 B1 KR970009613 B1 KR 970009613B1 KR 93031154 A KR93031154 A KR 93031154A KR 930031154 A KR930031154 A KR 930031154A KR 970009613 B1 KR970009613 B1 KR 970009613B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- metal thin
- succession
- film
- level
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93031154A KR970009613B1 (en) | 1993-12-30 | 1993-12-30 | Multi-level metalizing method of semiconductor device |
JP6325104A JPH0837237A (ja) | 1993-12-30 | 1994-12-27 | 半導体素子の多層金属配線形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93031154A KR970009613B1 (en) | 1993-12-30 | 1993-12-30 | Multi-level metalizing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021120A KR950021120A (ko) | 1995-07-26 |
KR970009613B1 true KR970009613B1 (en) | 1997-06-14 |
Family
ID=19374164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93031154A KR970009613B1 (en) | 1993-12-30 | 1993-12-30 | Multi-level metalizing method of semiconductor device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0837237A (ko) |
KR (1) | KR970009613B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990057826A (ko) * | 1997-12-30 | 1999-07-15 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
KR100576515B1 (ko) * | 2004-12-30 | 2006-05-03 | 동부일렉트로닉스 주식회사 | 원형결함을 방지하는 금속 식각 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69034137D1 (de) * | 1990-10-01 | 2004-06-03 | St Microelectronics Srl | Herstellung von Kontaktanschlüssen bei der alles überdeckenden CVD-Abscheidung und Rückätzen |
JPH05114558A (ja) * | 1990-11-27 | 1993-05-07 | Toshiba Corp | 半導体装置の製造方法 |
JPH05121378A (ja) * | 1991-10-29 | 1993-05-18 | Sony Corp | 半導体装置の製造方法 |
JPH05326722A (ja) * | 1992-04-01 | 1993-12-10 | Nec Corp | 半導体装置の製造方法 |
-
1993
- 1993-12-30 KR KR93031154A patent/KR970009613B1/ko not_active IP Right Cessation
-
1994
- 1994-12-27 JP JP6325104A patent/JPH0837237A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR950021120A (ko) | 1995-07-26 |
JPH0837237A (ja) | 1996-02-06 |
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