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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
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Abstract
An IC device fabrication method to produce the multi-layer circuits between the first and the second regions which has relatively lower and higher stage difference, respectively. This method includes the following characters: a) When the first circuits layer formed on the first insulated layer of the first region, the second insulated layer would deposit on the first and second region. b) Etching back the second insulated layer of the relatively higher stage difference second region c) Coating the SOG film on the second insulated layer and then depositing the third insulated layer d) Forming the second circuits layer on the third insulated layer of the first region and second region, respectively.
TW085109772A1995-08-091996-08-12One manufacturing method of the semiconductor integrated circuit device
TW332340B
(en)
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof