KR960039289A - 절연페이스트 및 이를 이용한 후막 인쇄 다층 회로 - Google Patents

절연페이스트 및 이를 이용한 후막 인쇄 다층 회로 Download PDF

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KR960039289A
KR960039289A KR1019960010279A KR19960010279A KR960039289A KR 960039289 A KR960039289 A KR 960039289A KR 1019960010279 A KR1019960010279 A KR 1019960010279A KR 19960010279 A KR19960010279 A KR 19960010279A KR 960039289 A KR960039289 A KR 960039289A
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components
same
thick film
group
multilayer circuit
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KR1019960010279A
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KR100228147B1 (ko
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히로미치 가와카미
히로지 다니
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무라따 야스따까
가부시끼가이샤 무라따 세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4664—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders
    • H05K3/4667—Adding a circuit layer by thick film methods, e.g. printing techniques or by other techniques for making conductive patterns by using pastes, inks or powders characterized by using an inorganic intermediate insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

본 발명은 Si02, B2O3및 K2O를 포함하는 글래스(glass) 성분과 유기 담체를 포함하여, 상기 글래스 성분의 조성비가 xSiO2-yB2O3-zK2O(x, y, z는 구성 성분의 중량% 비)로 표현되고, 점 A(x=65, y=35, z=0), B(x=65, y=20, z=15), C(x=85, y=0, z=15) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 절연패이스트에 대한 것이다. 상기 패이스트로 형성된 절연층은 저유전율을 갖고 우수한 절연성을 갖는다.

Description

절연페이스트 및 이를 이용한 후막 인쇄 다층 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 특성 평가에 사용되어지는 것으로서, 본 발명의 후막 다층 인쇄 회로의 일실시예를 나타내는 단면도이다.

Claims (9)

  1. Si02, B2O3및 K2O를 포함하는 글래스(glass) 성분과, 유기 담체를 포함하여, 상기 글래스 성분의 조성비가 xSiO2-yB2O3-zK2O(x, y, z는 구성 성분의 중량% 비)로 표현되고, 점 A(x=65, y=35, z=0), B(x=65, y=20, z=15),
    C(x=85, y=0, z=15) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 절연패이스트.
  2. 제1항에 있어서, 상기 구성 성분들이 점 A'(x=75, y=25, z=0), B'(x=75, y=20, z=5), C'(x=85, y=10, z=5) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 절연 패이스트.
  3. 제1항에 있어서, 상기 구성 성분들이 점 A"(x=75, y=24.5, z=0.5), B'(x=75, y=20, z=5), C'(x=85, y=10, z=5) 및 D"(x=65, y=14.5, z=0.5)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 절연 패이스트.
  4. 제1항에 있어서, Si02, B2O3및 K2O를 포함하는 글래스 성분을 포함하는 절연층을 포함하며, 상기 글래스 성분의 조성비가 xSiO2-yB2O3-zK2O(x, y, z는 구성 성분의 중량% 비)로 표현되고, 점 A(x=65, y=35, z=0), B(x=65, y=20, z=15), C(x=85, y=0, z=15) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 후막 다층 인쇄 회로.
  5. 제4항에 있어서, 상기 구성 성분들이 점 A'(x=75, y=25, z=0), B'(x=75, y=20, z=5), C'(x=85, y=10, z=5) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 후막 다층 인쇄 회로.
  6. 제5항에 있어서, 상기 구성 성분들이 점 A"(x=75, y=24.5, z=0.5), B'(x=75, y=20, z=5), C'(x=85, y=10, z=5) 및 D"(x=85, y=14.5, z=0.5)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 후막 다층 인쇄 회로.
  7. Si02, B2O3및 K2O를 포함하는 글래스 성분을 포함하는 절연층을 표면의 일부에 갖는 기판을 포함하며, 상기 글래스 성분의 조성비가 xSiO2-yB2O3-zK2O(x, y, z는 구성 성분의 중량% 비)로 표현되고, A(x=65, y=35, z=0), B(x=65, y=20, z=15), C(x=85, y=0, z=15) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 후막 인쇄 회로.
  8. 제7항에 있어서, 상기 구성 성분들이 점 A'(x=75, y=25, z=0), B'(x=75, y=20, z=5), C'(x=85, y=10, z=5) 및 D(x=85, y=15, z=0)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 후막 인쇄 회로.
  9. 제8항에 있어서, 상기 구성 성분들이 점 A"(x=75, y=24.5, z=0.5), B'(x=75, y=20, z=5), C'(x=85, y=10, z=5) 및 D"(x=85, y=14.5, z=0.5)으로 둘러쌓인 영역내에 해당함을 특징으로 하는 후막 인쇄회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960010279A 1995-04-04 1996-04-04 절연 페이스트 및 이를 이용한 후막 인쇄 다층 회로 KR100228147B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7-79058 1995-04-04
JP7079058A JP3067580B2 (ja) 1995-04-04 1995-04-04 絶縁ペースト及びそれを用いた厚膜印刷多層回路

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KR960039289A true KR960039289A (ko) 1996-11-25
KR100228147B1 KR100228147B1 (ko) 1999-11-01

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JP3473353B2 (ja) * 1997-10-17 2003-12-02 株式会社村田製作所 絶縁体ペースト
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JP3651298B2 (ja) * 1999-02-17 2005-05-25 株式会社村田製作所 感光性絶縁体ペースト及び厚膜多層回路基板
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EP1096512B1 (en) * 1999-10-28 2005-08-10 Murata Manufacturing Co., Ltd. Thick-film resistor and ceramic circuit board
JP3407716B2 (ja) * 2000-06-08 2003-05-19 株式会社村田製作所 複合積層電子部品
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JP4544067B2 (ja) * 2005-07-14 2010-09-15 パナソニック株式会社 電子部品
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KR100228147B1 (ko) 1999-11-01
US5968858A (en) 1999-10-19
JP3067580B2 (ja) 2000-07-17
US5766741A (en) 1998-06-16
JPH08273437A (ja) 1996-10-18

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