KR960031642A - 멀티 챔버 스퍼터링 장치 - Google Patents

멀티 챔버 스퍼터링 장치 Download PDF

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Publication number
KR960031642A
KR960031642A KR1019960004727A KR19960004727A KR960031642A KR 960031642 A KR960031642 A KR 960031642A KR 1019960004727 A KR1019960004727 A KR 1019960004727A KR 19960004727 A KR19960004727 A KR 19960004727A KR 960031642 A KR960031642 A KR 960031642A
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KR
South Korea
Prior art keywords
substrate
chamber
target electrode
target
sputtering
Prior art date
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KR1019960004727A
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English (en)
Inventor
미쯔히로 가메이
에이지 세또야마
사또시 우메하라
Original Assignee
가나이 쯔도무
가부시키가이샤 히다치 세사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가나이 쯔도무, 가부시키가이샤 히다치 세사쿠쇼 filed Critical 가나이 쯔도무
Publication of KR960031642A publication Critical patent/KR960031642A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명의 목적은 생산성이 대단히 높고, 또 막질이 저하되지 않는 멀티 챔버 스퍼터링장치를 얻는데 있다.
반송로봇(7)에 의하여 반송되는 기판홀더(17)는 스퍼터실(3,4)내에서 기판이동기구(16)에 의하여 이동이 가능하고, 스퍼터실에 설치된 전극에 대향하는 위치로 이동할 수 있다.
또, 처리실의 하나로서 이온빔 스퍼터실을 구비함으로써 종래에 없는 고성능막의 형성도 가능해진다.

Description

멀티 챔버 스퍼터링 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 멀티 챔버 스퍼터링 장치의 일 실시예를 나타낸 구조도,
제2도는 본 발명에 의한 기판전극의 상세 구조를 나타낸 단면도.

Claims (3)

  1. 진공용기와, 상기 진공용기내에 배치된 타겟전극과, 상기 타겟전극과 대향하는 위치에 배치되며, 상기 타겟전극을 스퍼터링함으로써 비산된 스퍼터입자가 퇴적되어 막이 형성되는 기판과, 상기 진공용기내를 진공상태로 유지한채 상기 기판을 반송할 수 있는 반송로봇을 수납한 반송실을 구비한 멀티 챔버 스퍼터링장치에 있어서, 적어도 1개의 상기 진공용기내에 복수의 타겟전극과 상기 타겟전극과 대략 대향하는 위치에 기판을 이동시킬 수 있음과 동시에, 상기 타겟전극과 상기 기판간의 거리를 변경할 수 있는 기판 이동기구를 설치한 것을 특징으로 하는 멀티 챔버 스퍼터링 장치.
  2. 제1항에 있어서, 상기 기판 이동기구에 기판을 자전시킬 수 있는 기주를 설치한 것을 특징으로 하는 멀티 챔버 스퍼터링 장치.
  3. 진공용기와, 상기 진공용기내에 배치된 타겟전극과, 상기 타겟전극에 대향하는 위치에 배치되며, 상기타겟전극을 스퍼터링함으로써 비산한 스퍼터입자가 퇴적되어 막이 형성되는 기판과, 상기진공용기내를 진공상태로 유지한 채 상기 기판을 반송할 수 있는 반송로봇을 수납한 반송실을 구비한 멀티 챔버 스퍼터링장치에 있어서, 상기 반송실에 접속하는 진공용기에, 이온빔 스퍼터용 이온원 및 이온빔 스퍼터용 타겟을 구비한 것을 특징으로 하는 멀티 챔버 스퍼터링 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960004727A 1995-02-28 1996-02-27 멀티 챔버 스퍼터링 장치 KR960031642A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-039679 1995-02-28
JP7039679A JPH08239765A (ja) 1995-02-28 1995-02-28 マルチチャンバースパッタリング装置

Publications (1)

Publication Number Publication Date
KR960031642A true KR960031642A (ko) 1996-09-17

Family

ID=12559790

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960004727A KR960031642A (ko) 1995-02-28 1996-02-27 멀티 챔버 스퍼터링 장치

Country Status (4)

Country Link
US (1) US5783055A (ko)
JP (1) JPH08239765A (ko)
KR (1) KR960031642A (ko)
DE (1) DE19606463C2 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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JPH10116964A (ja) * 1996-10-09 1998-05-06 Oki Electric Ind Co Ltd 半導体装置とその製造方法およびスパッタリング装置
US6040962A (en) * 1997-05-14 2000-03-21 Tdk Corporation Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area
US6905578B1 (en) * 1998-04-27 2005-06-14 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure
DE19819726A1 (de) * 1998-05-02 1999-11-04 Leybold Systems Gmbh Vakuumbehandlungsanlage zum Aufbringen dünner, harter Schichten
US6063244A (en) * 1998-05-21 2000-05-16 International Business Machines Corporation Dual chamber ion beam sputter deposition system
JP4837163B2 (ja) * 2000-07-27 2011-12-14 株式会社アルバック スパッタリング装置
JP2002167661A (ja) * 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置
JP2006509999A (ja) * 2002-08-02 2006-03-23 イー エイ フィシオネ インストルメンツ インコーポレーテッド 顕微鏡の試料調製方法及び装置
JP4052191B2 (ja) * 2003-06-24 2008-02-27 株式会社島津製作所 複合成膜装置およびこれを用いた磁気ヘッドの保護膜形成方法
JP4891354B2 (ja) * 2009-01-14 2012-03-07 キヤノンアネルバ株式会社 磁気抵抗デバイスの製造方法及び製造装置
KR101786868B1 (ko) 2010-12-28 2017-10-18 캐논 아네르바 가부시키가이샤 제조방법
EP2613358A2 (en) * 2012-01-04 2013-07-10 OC Oerlikon Balzers AG Double layer antireflection coating for silicon based solar cell modules
CN104674181B (zh) * 2015-02-09 2017-01-25 常州工学院 一种快速换靶单面往复连续镀膜磁控溅射卷绕镀膜机
KR101736854B1 (ko) * 2015-10-29 2017-05-17 세메스 주식회사 기판 처리 장치
DE102016125278A1 (de) 2016-12-14 2018-06-14 Schneider Gmbh & Co. Kg Vorrichtung, Verfahren und Verwendung zur Beschichtung von Linsen
CN112458425B (zh) * 2020-10-30 2022-06-28 湘潭宏大真空技术股份有限公司 应用于狭窄空间的三室镀膜机
CN113658885B (zh) * 2021-08-12 2023-09-08 长鑫存储技术有限公司 制备腔室的确定方法及装置

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US4465416A (en) * 1982-05-17 1984-08-14 The Perkin-Elmer Corporation Wafer handling mechanism
JPS60238479A (ja) * 1984-05-10 1985-11-27 Anelva Corp 真空薄膜処理装置
JPS61106768A (ja) * 1984-10-31 1986-05-24 Anelva Corp 基体処理装置
US4664935A (en) * 1985-09-24 1987-05-12 Machine Technology, Inc. Thin film deposition apparatus and method
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPH0230759A (ja) * 1988-07-19 1990-02-01 Ulvac Corp 真空処理装置
JPH0762251B2 (ja) * 1990-12-21 1995-07-05 日電アネルバ株式会社 マルチチャンバ型スパッタリング装置
JP3042056B2 (ja) * 1991-08-22 2000-05-15 日新電機株式会社 基体処理装置

Also Published As

Publication number Publication date
JPH08239765A (ja) 1996-09-17
DE19606463A1 (de) 1996-08-29
US5783055A (en) 1998-07-21
DE19606463C2 (de) 1998-05-28

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