KR970070232A - 스퍼터성막장치 - Google Patents

스퍼터성막장치 Download PDF

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Publication number
KR970070232A
KR970070232A KR1019970014310A KR19970014310A KR970070232A KR 970070232 A KR970070232 A KR 970070232A KR 1019970014310 A KR1019970014310 A KR 1019970014310A KR 19970014310 A KR19970014310 A KR 19970014310A KR 970070232 A KR970070232 A KR 970070232A
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KR
South Korea
Prior art keywords
rocking
target
substrate
forming apparatus
film forming
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KR1019970014310A
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English (en)
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KR100262768B1 (ko
Inventor
김경식
다미오 야마다
다이스케 아오누마
요시후미 우네하라
Original Assignee
니시히라 순지
아네루바 가부시키가이샤
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Publication of KR970070232A publication Critical patent/KR970070232A/ko
Application granted granted Critical
Publication of KR100262768B1 publication Critical patent/KR100262768B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Abstract

타게트표면의 전면을 스퍼터하고, 타게트표면상의 에로젼영역의 깊이를 균일화하여, 타게트의 이용효율을 향상시키고, 성막된 기판상의 막두께 분포와 막질 분포를 개선한다.
진공용기(11)와, 진공용기내를 배기하는 배기기구(18)와, 타게트(14)를 부착한 마그네트론 음극(12a, 12b)과, 스퍼터가스를 도입하는 가스도입기구(19)와, 기판 반송기구를 구비한다. 타게트 근처에서는 방전이 생성되어, 이에 따라 타게트가 스퍼터되고, 타게트표면에 대향하여 통과하는 기판(15)상에 스퍼터성막이 행해진다. 마그네트론 음극은, 마그네트론 자기회로(32)를 이동가능하게 구비하고, 마그네트론 자기회로를 타게트표면에 평행하게 기판반송방향으로 요동하는 좌우방향 요동부와, 기판반송방향에 대하여 수직인 방향으로 요동하는 상하방향 요동부를 포함하는 마그네트론 요동기구(33)를 구비한다.

Description

스퍼터성막장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 스퍼터성막장치(sputter deposition system)의 주요부의 종단면도이다.

Claims (6)

  1. 스퍼터성막챔버를 형성하는 진공용기와, 이 진공용기의 내부를 진공배기하는 배기기구와, 상기 진공용기의 내부에 임하는 타게트를 부착한 마그네트론 음극과, 상기 진공용기내에 스퍼터가스를 도입하는 가스도입기구와, 상기 진공용기의 내부에 기판을 반송하는 기판반송기구를 구비한 스퍼터성막을 행하는 스퍼터성막장치에 있어서, 상기 마그네트론 음극은, 상기 타게트의 배면측에 위치하는 마그네트론 자기회로와, 상기 마그네트론 자기회로를 상기 타게트의 표면에 평행하게 기판반송방향으로 요동하는 제1요동수단과, 상기 마그네트론 자기회로를 상기 타게트의 표면에 평행하고 기판반송방향에 대하여 수직인 방향으로 요동하는 제2요동수단을 구비한 것을 특징으로 한 스퍼터성막장치.
  2. 제1항에 있어서, 상기 제1요동수단에 의한 요동동작과 제2요동수단에 의한 요동동작중 적어도 한쪽은 정현함수의 요동을 가지는 것을 특징으로 하는 스퍼터성막장치.
  3. 제1항에 있어서, 상기 제1요동수단에 의한 요동동작과 상기 제2요동수단에 의한 요동동작중 적어도 한쪽은 양단의 근처를 제외하고 등속의 요동특성을 가지는 것을 특징으로 하는 스퍼터성막장치.
  4. 제2항에 있어서, 상기 제1요동수단에 의한 요동동작과 상기 제2요동수단에 의한 요동동작의 각 위상을 임의로 제어하는 수단을 가지는 것을 특징으로 하는 스퍼터성막장치.
  5. 제2항에 있어서, 상기 제1요동수단에 의한 요동동작의 주기가 상기 제2요동수단에 의한 요동동작의 주기의 4배 이상인 것을 특징으로 하는 스퍼터성막장치.
  6. 제2항에 있어서, 상기 타게트를 상기 기판의 어떤 1점이 통과하는 시간 동안에 상기 제1요동수단은 기판반송방향으로 복수주기의 요동동작을 행하는 것을 특징으로 하는 스퍼터성막장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970014310A 1996-04-24 1997-04-18 스퍼터성막장치 KR100262768B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-127923 1996-04-24
JP12792396 1996-04-24

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Publication Number Publication Date
KR970070232A true KR970070232A (ko) 1997-11-07
KR100262768B1 KR100262768B1 (ko) 2000-08-01

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US (1) US5833815A (ko)
KR (1) KR100262768B1 (ko)

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KR100262768B1 (ko) 2000-08-01
US5833815A (en) 1998-11-10

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