GB1201743A - Improvements in or relating to the deposition of a layer of solid material on a substrate by cathode sputtering - Google Patents
Improvements in or relating to the deposition of a layer of solid material on a substrate by cathode sputteringInfo
- Publication number
- GB1201743A GB1201743A GB7302/69A GB730269A GB1201743A GB 1201743 A GB1201743 A GB 1201743A GB 7302/69 A GB7302/69 A GB 7302/69A GB 730269 A GB730269 A GB 730269A GB 1201743 A GB1201743 A GB 1201743A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- cathode
- sputtered
- anode
- feb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
1,201,743. Sputtering apparatus SIEMENS A.G. Feb.11, 1969 [Feb. 12, 1968], No.7302/69. Heading C7F. Material is sputtered on to a substrate 1 of e.g. Si, Ge glass or ceramic from a negatively biased cathode 3 in the form of a perforate grid, which is located between the substrate and the anode 5. The distance between the substrate and the cathode is arranged to be less than 10 mean free path lengths of the material to be sputtered at the reduced pressure, and this distance is such that no independent discharge takes place between them. The substrate may be cleaned by pivoting the cathode out of the line between the substrate and anode and applying a high voltage. The cleaning and the sputtering may be carried out with continuous evacuation of the vessel, and introduction of argon or reactive gases e.g. oxygen or nitrogen. The material to be sputtered may be Ta, Ni, Ti, Si, Al, W, Mo, Cr, semi-conductors, non-metals or oxides, nitrides, carbides, and silicides. When the material to be sputtered is not conductive, two electrodes may be used with H. F. voltage. The substrate or the cathode may be moved during deposition. When the substrate is in the form of several small objects, the cathode and substrate carrier may be curved, Fig. (not shown). The vacuum chamber may be made of metal and the earthed wall used as the anode. With the cathode privoted out of the way, additional layers may be vapour deposited on the substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0114079 | 1968-02-12 | ||
| DE19681690692 DE1690692A1 (en) | 1968-02-12 | 1968-02-12 | Method for applying a layer of inorganic solid material to a substrate by cathode sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1201743A true GB1201743A (en) | 1970-08-12 |
Family
ID=33453306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7302/69A Expired GB1201743A (en) | 1968-02-12 | 1969-02-11 | Improvements in or relating to the deposition of a layer of solid material on a substrate by cathode sputtering |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1690692A1 (en) |
| GB (1) | GB1201743A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4006070A (en) | 1971-02-05 | 1977-02-01 | Triplex Safety Glass Company Limited | Metal oxide films |
| US4082040A (en) * | 1975-08-01 | 1978-04-04 | Fuji Photo Film Co., Ltd. | Lithographic printing plate |
| FR2541690A1 (en) * | 1983-02-25 | 1984-08-31 | Berna Ag Olten | Glow discharge coating appts. |
| GB2224752A (en) * | 1988-11-10 | 1990-05-16 | Stc Plc | Patterned film deposition from perforated |
-
1968
- 1968-02-12 DE DE19681690692 patent/DE1690692A1/en active Pending
-
1969
- 1969-02-11 GB GB7302/69A patent/GB1201743A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4006070A (en) | 1971-02-05 | 1977-02-01 | Triplex Safety Glass Company Limited | Metal oxide films |
| US4082040A (en) * | 1975-08-01 | 1978-04-04 | Fuji Photo Film Co., Ltd. | Lithographic printing plate |
| FR2541690A1 (en) * | 1983-02-25 | 1984-08-31 | Berna Ag Olten | Glow discharge coating appts. |
| GB2224752A (en) * | 1988-11-10 | 1990-05-16 | Stc Plc | Patterned film deposition from perforated |
| GB2224752B (en) * | 1988-11-10 | 1992-08-05 | Stc Plc | Film deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1690692A1 (en) | 1971-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3985635A (en) | Apparatus for concurrently sputtering different materials | |
| US3461054A (en) | Cathodic sputtering from a cathodically biased target electrode having an rf potential superimposed on the cathodic bias | |
| US4234622A (en) | Vacuum deposition method | |
| GB1162832A (en) | A Process and Device for Coating Surfaces | |
| GB1504548A (en) | Method and apparatus for depositing thin layers of insulating or slightly conductive materials by reactive sputtering in a high-frequency inductive plasma | |
| CA2107242A1 (en) | An Evaporation System for Gas Jet Deposition on Thin Film Materials | |
| US3654110A (en) | Method of applying a coating by cathode sputtering | |
| US3723838A (en) | Nitrogen-doped beta tantalum capacitor | |
| US3847658A (en) | Article of manufacture having a film comprising nitrogen-doped beta tantalum | |
| JPS59185775A (en) | Metal compound quick reactive sputtering | |
| FR2397067A1 (en) | Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate | |
| GB1100447A (en) | Improvements in apparatus and process for coating materials | |
| US3644191A (en) | Sputtering apparatus | |
| GB1242492A (en) | Improvements relating to the coating of a substrate by r.f. sputtering | |
| GB1117009A (en) | Improvements in and relating to depositing thin layers by vapour deposition or cathode sputtering | |
| GB1217685A (en) | Improvements in or relating to methods and apparatus for sputtering of materials | |
| GB1201743A (en) | Improvements in or relating to the deposition of a layer of solid material on a substrate by cathode sputtering | |
| GB1132867A (en) | Improvements in or relating to apparatus for depositing thin films | |
| GB1100560A (en) | Improvements in apparatus and process for treating diamonds by glow discharge | |
| GB1118758A (en) | Improvements in or relating to the sputtering of conductive materials | |
| US3481854A (en) | Preparation of thin cermet films by radio frequency sputtering | |
| GB1244618A (en) | A method of forming a metal contact on an element and a vacuum deposition system that may be used in performing this method | |
| US3530055A (en) | Formation of layers of solids on substrates | |
| GB1181559A (en) | Improvements in or relating to the Deposition of Insulating Films of Silicon Nitride. | |
| US3736242A (en) | Sputtering technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |