FR2397067A1 - Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate - Google Patents

Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate

Info

Publication number
FR2397067A1
FR2397067A1 FR7720766A FR7720766A FR2397067A1 FR 2397067 A1 FR2397067 A1 FR 2397067A1 FR 7720766 A FR7720766 A FR 7720766A FR 7720766 A FR7720766 A FR 7720766A FR 2397067 A1 FR2397067 A1 FR 2397067A1
Authority
FR
France
Prior art keywords
glow discharge
gas
iii
vessel
reactive materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7720766A
Other languages
French (fr)
Other versions
FR2397067B1 (en
Inventor
Francis Forrat
Louise Peccoud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7720766A priority Critical patent/FR2397067A1/en
Publication of FR2397067A1 publication Critical patent/FR2397067A1/en
Application granted granted Critical
Publication of FR2397067B1 publication Critical patent/FR2397067B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

In a vessel is a plate (I) supporting substrates below a gas pipe ending in a porous wall or plate (II) for uniform distribution of the gas over (I), the gas being converted to a reactive state in the vessel. The pref. vessel produces a glow discharge in the gas via an upper electrode (III) located above (II) and an electrode (III) located underneath (I). The two electrodes are connected to an electricity generator. (III) pref. consists of a flat dish turned upside down and closed by the porous plate (II) to form a chamber feeding gas downwards; (II) may have a contour to match the layers to be deposited. (II) may be an insulator or a conductor, and may be a sintered material. The process is used for reactive materials in a glow discharge; and in cathodic sputtering or chemical vapour deposition. It is used esp. to deposit an insulator on Si in mfg. semiconductors.
FR7720766A 1977-07-06 1977-07-06 Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate Granted FR2397067A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7720766A FR2397067A1 (en) 1977-07-06 1977-07-06 Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7720766A FR2397067A1 (en) 1977-07-06 1977-07-06 Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate

Publications (2)

Publication Number Publication Date
FR2397067A1 true FR2397067A1 (en) 1979-02-02
FR2397067B1 FR2397067B1 (en) 1982-10-15

Family

ID=9193055

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7720766A Granted FR2397067A1 (en) 1977-07-06 1977-07-06 Depositing reactive materials onto, or etching, substrates - by glow discharge in gas fed through porous distributor plate

Country Status (1)

Country Link
FR (1) FR2397067A1 (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352974A (en) * 1979-08-01 1982-10-05 Hitachi, Ltd. Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
EP0066088A2 (en) * 1981-06-02 1982-12-08 International Business Machines Corporation Perforated anode for use in reactive ion etching apparatus
FR2514033A1 (en) * 1981-10-02 1983-04-08 Henaff Louis INSTALLATION FOR THE PLASMA REINFORCED PLASMA VAPOR PHASE SURFACE THIN FILM DEPOSITION
FR2538987A1 (en) * 1983-01-05 1984-07-06 Commissariat Energie Atomique ENCLOSURE FOR THE TREATMENT AND PARTICULARLY THE ETCHING OF SUBSTRATES BY THE REACTIVE PLASMA METHOD
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
WO1985002418A1 (en) * 1983-12-01 1985-06-06 Shatterproof Glass Corporation Gas distribution system for sputtering cathodes
WO1987006776A1 (en) * 1986-04-29 1987-11-05 Loughborough Consultants Limited Electric discharge apparatus
EP0296891A2 (en) * 1987-06-26 1988-12-28 Applied Materials, Inc. Process for self-cleaning of a reactor chamber
EP0413389A1 (en) * 1989-08-17 1991-02-20 Philips Patentverwaltung GmbH Process for the deposition of microcrystalline solid particles from the gas phase by chemical vapour deposition
DE4102198A1 (en) * 1990-01-26 1991-08-08 Fuji Electric Co Ltd RF PLASMA CVD DEVICE AND THIN FILM MANUFACTURING METHOD USING THE DEVICE
DE4029268A1 (en) * 1990-09-14 1992-03-19 Balzers Hochvakuum METHOD AND ARRANGEMENT FOR DC-ARC DISCHARGE-ASSISTED, REACTIVE TREATMENT OF GOOD
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP0523609A2 (en) * 1991-07-15 1993-01-20 Matsushita Electric Industrial Co., Ltd. Method for forming a film with plasma CVD process
WO1999065057A1 (en) * 1998-06-12 1999-12-16 Applied Materials, Inc. Gas distribution system
CN113913790A (en) * 2020-07-08 2022-01-11 湖南红太阳光电科技有限公司 Multi-section type electrode plate glow discharge device for flat plate type PECVD equipment

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
JPH0752718B2 (en) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 Thin film formation method
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
US6113701A (en) 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352974A (en) * 1979-08-01 1982-10-05 Hitachi, Ltd. Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
EP0066088A2 (en) * 1981-06-02 1982-12-08 International Business Machines Corporation Perforated anode for use in reactive ion etching apparatus
EP0066088A3 (en) * 1981-06-02 1984-02-01 International Business Machines Corporation Perforated anode for use in reactive ion etching apparatus
FR2514033A1 (en) * 1981-10-02 1983-04-08 Henaff Louis INSTALLATION FOR THE PLASMA REINFORCED PLASMA VAPOR PHASE SURFACE THIN FILM DEPOSITION
FR2538987A1 (en) * 1983-01-05 1984-07-06 Commissariat Energie Atomique ENCLOSURE FOR THE TREATMENT AND PARTICULARLY THE ETCHING OF SUBSTRATES BY THE REACTIVE PLASMA METHOD
EP0115970A1 (en) * 1983-01-05 1984-08-15 Commissariat A L'energie Atomique Vessel for the processing and particularly etching of substrates by the reactive plasma method
WO1985002418A1 (en) * 1983-12-01 1985-06-06 Shatterproof Glass Corporation Gas distribution system for sputtering cathodes
US4491509A (en) * 1984-03-09 1985-01-01 At&T Technologies, Inc. Methods of and apparatus for sputtering material onto a substrate
WO1987006776A1 (en) * 1986-04-29 1987-11-05 Loughborough Consultants Limited Electric discharge apparatus
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
EP0296891A3 (en) * 1987-06-26 1990-05-30 Applied Materials, Inc. Reactor chamber for selfcleaning process
EP0296891A2 (en) * 1987-06-26 1988-12-28 Applied Materials, Inc. Process for self-cleaning of a reactor chamber
EP0413389A1 (en) * 1989-08-17 1991-02-20 Philips Patentverwaltung GmbH Process for the deposition of microcrystalline solid particles from the gas phase by chemical vapour deposition
DE4102198A1 (en) * 1990-01-26 1991-08-08 Fuji Electric Co Ltd RF PLASMA CVD DEVICE AND THIN FILM MANUFACTURING METHOD USING THE DEVICE
DE4029268A1 (en) * 1990-09-14 1992-03-19 Balzers Hochvakuum METHOD AND ARRANGEMENT FOR DC-ARC DISCHARGE-ASSISTED, REACTIVE TREATMENT OF GOOD
US5336326A (en) * 1990-09-14 1994-08-09 Balzers Aktiengesellschaft Method of and apparatus for a direct voltage arc discharge enhanced reactive treatment of objects
EP0523609A2 (en) * 1991-07-15 1993-01-20 Matsushita Electric Industrial Co., Ltd. Method for forming a film with plasma CVD process
EP0523609A3 (en) * 1991-07-15 1995-06-14 Matsushita Electric Ind Co Ltd
WO1999065057A1 (en) * 1998-06-12 1999-12-16 Applied Materials, Inc. Gas distribution system
CN113913790A (en) * 2020-07-08 2022-01-11 湖南红太阳光电科技有限公司 Multi-section type electrode plate glow discharge device for flat plate type PECVD equipment

Also Published As

Publication number Publication date
FR2397067B1 (en) 1982-10-15

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