KR930006176A - 반응성 스퍼터링장치 - Google Patents

반응성 스퍼터링장치 Download PDF

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Publication number
KR930006176A
KR930006176A KR1019920016510A KR920016510A KR930006176A KR 930006176 A KR930006176 A KR 930006176A KR 1019920016510 A KR1019920016510 A KR 1019920016510A KR 920016510 A KR920016510 A KR 920016510A KR 930006176 A KR930006176 A KR 930006176A
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South Korea
Prior art keywords
gas
chamber
target
reactive
flow rate
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KR1019920016510A
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English (en)
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KR950005350B1 (ko
Inventor
히토시 야마니시
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다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
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Publication of KR930006176A publication Critical patent/KR930006176A/ko
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Publication of KR950005350B1 publication Critical patent/KR950005350B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 반도체 제조 프로세스나 전자부품재료등의 제조공정에 사용하는 반응성스퍼터링에 있어서, 박막형성속도의 저하를 억제하는 반응성스퍼터링 장치의 제공을 목적으로 하는 것으로서, 반응성가스(6)와 방전가스(5)의 공급위치를 따로따로 설치하는 것이고, 타겟(7)에 복수의 작은구멍(20)을 형성하는 동시에 방전가스(5)를 그 작은구멍을 통해서 타겟(7)의 침식영역(13)으로부터 공급하도록 구성하므로서, 타겟(7)표면 근처에서 형성되는 마그네트론 방전에 의한 플라즈마에 기여하는 가스중의 대부분이 방전가스(5)로 되어, 스퍼터입자의 방출을 방해한다. 라겟재와 반응성가스(6)와의 화합물이 형성되기 어려워지기 때문에, 화합물박막의 형성속도의 저하를 억제할 수 있는 것을 특징으로 한다.

Description

반응성 스퍼터링장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 있어서의 반응성스퍼터링장치의 구성도.
제2도는 동실시예에 있어서의 반응성 스퍼터링장치의 음극의 단면도.
제3도 (a)는 제2도의 음극을 a-a'선을 따른 연직상향으로 본 평단면도, (b)는 제2도의 음극을 b-b'선을 따른 연직상향으로 본 평단면도, (c)는 제2도의 음극을 c-d'선을 따른 면직상향으로 본 평단면도.

Claims (1)

  1. 체임버와, 상기 체임버의 내면에 고정된 음극과, 상기 음극에 장착되어 복수의 작은구멍을 가진 타겟과, 상기 체임버 내의 공기를 진공배기하는 진공배기수단과, 상기 체임버의 일부에 배치되어, 반응성가스를 체임버 내에 공급하는 제1의 가스도입수단과, 상기 타겟의 작은구멍을 통해서 방전가스를 상기 타겟의 침식영역으로부터 상기 체임버내에 공급하도록 배치된 제2의 가스도입수단과, 상기 반응성가스의 공급유량을 재어하는 제1의 가스유량제어수단과, 상기 방전가스의 공급유량을 제어하는 제2의 가스유량제어수단과, 상기 음극에 전압을 인가하는 전원과, 자장을 형성하는 자기회로와, 상기 체임버내에서, 또한 상기 라겟에 대향하도록 배치되어, 기판을 설치 고정하는 기판호울더로 구성되는 것을 특징으로 하는 반응성스퍼터링장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920016510A 1991-09-10 1992-09-09 반응성스퍼터링장치 KR950005350B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP91-229987 1991-09-10
JP3229987A JPH0565642A (ja) 1991-09-10 1991-09-10 反応性スパツタリング装置
JP3-229987 1991-09-10

Publications (2)

Publication Number Publication Date
KR930006176A true KR930006176A (ko) 1993-04-21
KR950005350B1 KR950005350B1 (ko) 1995-05-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920016510A KR950005350B1 (ko) 1991-09-10 1992-09-09 반응성스퍼터링장치

Country Status (3)

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US (1) US5322605A (ko)
JP (1) JPH0565642A (ko)
KR (1) KR950005350B1 (ko)

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US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
EP0808915A3 (en) * 1996-05-23 1998-08-05 Applied Materials, Inc. Chemical vapor deposition and sputtering method and apparatus
JP3429957B2 (ja) * 1996-08-28 2003-07-28 松下電器産業株式会社 スパッタリング方法及び装置
US6207027B1 (en) * 1997-05-07 2001-03-27 Applied Materials, Inc. Method to reduce overhead time in an ion metal plasma process
US5985104A (en) * 1997-10-09 1999-11-16 International Business Machines Corporation Sputtered mask defined with highly selective side wall chemical etching
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6290825B1 (en) * 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
JP4163331B2 (ja) * 1999-07-14 2008-10-08 アルバック成膜株式会社 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
GB0108782D0 (en) * 2001-04-07 2001-05-30 Trikon Holdings Ltd Methods and apparatus for forming precursors
US20030203123A1 (en) * 2002-04-26 2003-10-30 Applied Materials, Inc. System and method for metal induced crystallization of polycrystalline thin film transistors
CH696013A5 (de) * 2002-10-03 2006-11-15 Tetra Laval Holdings & Finance Vorrichtung zur Behandlung eines bandförmigen Materials in einem Plasma-unterstützten Prozess.
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
US8419911B2 (en) 2005-01-28 2013-04-16 Panasonic Corporation Deposition method by physical vapor deposition and target for deposition processing by physical vapor deposition
KR101174146B1 (ko) * 2005-06-28 2012-08-14 엘지디스플레이 주식회사 스퍼터링 장치
EP1840936A1 (de) * 2006-03-29 2007-10-03 Applied Materials GmbH & Co. KG Sputterkammer zum Beschichten eines Substrats
US7850828B2 (en) * 2006-09-15 2010-12-14 Cardinal Cg Company Enhanced virtual anode
KR20090009612A (ko) * 2007-07-20 2009-01-23 엘지디스플레이 주식회사 스퍼터링을 통한 무기절연막 형성방법
JP2010084212A (ja) * 2008-10-01 2010-04-15 Ulvac Japan Ltd 反応性スパッタリング装置
DE102009021056A1 (de) * 2008-10-30 2010-05-12 BAM Bundesanstalt für Materialforschung und -prüfung Verfahren und Vorrichtung zum Aufbringen oder Einbetten von Partikeln auf oder in eine durch Plasmabeschichtung aufgebrachte Schicht
JP2009079301A (ja) * 2008-11-06 2009-04-16 Canon Anelva Corp 反応性スパッタリング装置
WO2016126650A1 (en) 2015-02-03 2016-08-11 Cardinal Cg Company Sputtering apparatus including gas distribution system
US10947639B2 (en) * 2016-03-18 2021-03-16 United States Of America As Represented By The Administrator Of Nasa Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms
CN114959607B (zh) * 2022-05-16 2024-01-26 深圳市新邦薄膜科技有限公司 一种磁控反应溅射工艺气体布气装置及布气方法

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DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern

Also Published As

Publication number Publication date
US5322605A (en) 1994-06-21
KR950005350B1 (ko) 1995-05-23
JPH0565642A (ja) 1993-03-19

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