KR960026256A - 새로운 텅스텐 증착방법 - Google Patents

새로운 텅스텐 증착방법 Download PDF

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KR960026256A
KR960026256A KR1019950065271A KR19950065271A KR960026256A KR 960026256 A KR960026256 A KR 960026256A KR 1019950065271 A KR1019950065271 A KR 1019950065271A KR 19950065271 A KR19950065271 A KR 19950065271A KR 960026256 A KR960026256 A KR 960026256A
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만신 머천트 사이레쉬
쿠마르 낸더 애런
로이 패러딥
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엘리 와이스
에이티 앤드 티 코포레이션
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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Abstract

텅스텐 플러그가 접촉홀을 가진 기판을 SiH4로 패시베이션 처리하고, 비교적 저압으로 WF6를 SiH4로 환원시켜 패베이션 처리된 기판상에 핵형성층을 형성하며, 비교적 고압으로 WF6를 H2로 환원시켜 접촉홀을 거의 채우도록 텅스텐을 증착시킴으로써 형성된다. 대안으로 원치 않은 텅스텐 환산부의 형성을 회피하고 기판상의 티탄 질화물층의 핀의 결함을 치유하도록 급속한 열적 어닐링이 이용된다.

Description

새로운 텅스텐 증착방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 방법에 따른 텅스텐 플러그 (원도우 또는 바이어 레벨에서)를 형성하기 위한 스텝을 도시하는 흐름도.

Claims (25)

  1. 텅스텐 플러그의 형성 방법에 있어서, 접촉홀을 가진 기판을 설치하는 스텝과, 상기 기판의 표면에 패시 베에션 처리하도록 상기 기판을 SiH4와 접촉시키는 스텝과, 상기 패시베이션 처리된 기판상에 핵형성층을 형성하도록 패시베이션 처리된 기판에서 1Torr 이하의 압력으로 WF6를 SiH4로 환원시키는 스텝과, 상기 접촉홀이 거의 채워질때가지 텅스텐으로 증착하기 위해 적어도 10Torr의 압력으로 WF6를 SiH4로 환원시키는 스텝과, 상기 접촉홀이 거의 채워질때까지 텅스텐으로 증착하기 위해 적어도 10Torr의 압력으로WF6을 H2로 환원시키는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  2. 제1항에 있어서, 패시베이션 처리된 티탄 질화물의 접착제층을 상기 기판의 적어도 일부분으로 도포하는 스텝을 더 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  3. 제2항에 있어서, 상기 티탄 질화물층은 적어도 약 600Å 두께인 것을 특징으로 하는 텅스턴 플러그 형성 방법.
  4. 제1항에 있어서, 상기WF6를 SiH4로 환원시키는 단계는 약 1Torr 이하의 압력으로 행해지는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  5. 제1항에 있어서, 상기WF6를 SiH4로 환원시키는 단계는 적어도 약 0.5Torr의압력으로 행해지는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  6. 제1항에 있어서, 상기WF6를 SiH4로 환원시키는 단계는 적어도 약 10Torr의 압력으로 행해지는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  7. 제1항에 있어서, 상기WF6를 H로 환원시키는 단계는 적어도 약 20Torr의 압력으로 행해지는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  8. 제 1항에 있어서, 상기 WF6를 SiH4로 WF6를 H2로 환원시키는 스텝은 약 400℃ 이상의 온도에서 행해지는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  9. 제2항에 있어서, 패시베이션 처리전 상기 접착제층을 어닐링하는 스텝을 더 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  10. 제9항에 있어서, 상기 어닐링은 약 5초 내지 60초 범위의 시간동안 450℃ 내지 550℃범위의 온도에서 행해지는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  11. 텅스텐 플러그의 형성 방법에 있어서, 전도층을 포함한 기판을 진공실내에 놓아 전도층 부분을 노출시키는 스텝과. 상기 기판을 패시베이션 처리하도록 SiH4가스를 진공실내에서 주입시키는 스텝과, SiH4가스와 WF6가스를 진공실내로 주입시키므로써 WF6가 환원되어 패시베이션 처리된 기판이 핵중성화되는 스텝과, H2가스와 WF6가스를 텅스텐으로 접촉홀을 거의 채우기 충분한 시간동안 진공실내로 주입시키는 스텝을 포함하며, 상기 전도층에는 절연층이 형성되어 있고, 상기 절연층에는 접촉홀이 형성되어 있으며, 상기 접촉홀은 절연층을 통해 연장되어 있는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  12. 제11항에 있어서, SiH4가스를 상기 진공실내로 주입시키는 단계전에 상기 기판의 적어도 일부분에 티탄 질화물의 접착제층을 도포하는 스텝을 더 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  13. 제12항에 있어서, 상기 티탄 질화물층은 적어도 약 600Å 두께인 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  14. 제12항에 있어서, SiH4가스를 상기 진공실내로 주입시키는 상기 스텝전에 상기 접착제층을 어닐링하는 스텝을 더 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  15. 제12항에 있어서, 상기 어닐링 스텝은 약 5초 내지 60초 시간동안 약 450℃ 내지 550℃ 사이의 온도로 피복된 기판을 가열하는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  16. 제11항에 있어서, SiH4및 WF6가스를 상기 진공실내로 주립시키는 스텝은 SiH4를 약 75SCCM 내지 약 300SCCM범위의 유량으로 상기 진공실내로 주입시키고 WF6를 약 35SCCM 내지 약 300SCCM범위의 유량으로 상기 진공실내로 주입시키는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  17. 제11항에 있어서, SiH4가스와 WF6가스를 주입시키는 스텝은 SiH4가스와 WF6가스를 약 4 : 1 내지 6 : 1의 범위로 주입히키는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  18. 제11항에 있어서, 상기 SiH4및 WF6를 주입시키는 상기 스텝 동안에 상기 진공실내의 압력은 약 1Torr를 초과하지 않는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  19. 제11항에 있어서, H2및 WF6가스를 주입시키는 상기 스텝 동안에 상기 진공실내의 압력은 적어도 약 20Torr인 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  20. 텅스텐 플러그를 형성하는벙법에 있어서, 전도층과 상기 전도층상에 형성된 절연층과, 싱기 전도층부를 노출시키기 위해 상기 절연층을 통해 형성된 접촉홀과, 상기 절연체층부 및 상기 전도층의 노출부를 피복하는 티탄층과, 상기 티탄층에 도포된 티탄 질화물층을 포함한 피복기판을 진공실내에 놓아 전도층 부분을 노출시키는 스텝과, 상기 피복 기판을 티탄 질화물층과 실란을 접촉시켜 패시베이션 처리하는 스텝과, 약 1Torr 이하의 압력으로 텅스텐 헥사플루오라이드를 실란으로 환원시켜 패시베이션 처리되고 피복된 기판에서 패시베이션이 처리되고, 피복된 기판상에 핵형성층을 증착하는 스텝에서, 상기 실란대 텅스텐 헥사플루오라이드의 비율은 핵형성층 증착간 4 : 1 내지 6 : 1의 범위에 있는 상기 증착 스텝과, 적어도 약 20Torr의 수고 가스 압력으로 텅스텐 헥사플루오라이드를 환원시켜 접촉홀을 거의 채우도록 텅스텐 증착시키는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  21. 바이어 레벨로 텅스텐 플러그를 형성하기 위한 방법에 있어서, 전도층과, 상기 전도층상에 형성된 절연층과, 상기 정도층부를 노출시키기 위해 절연체층을 통해 형성된 접촉홀과, 상기 절연체층부와 상기 전도체층의 노출부를 피복하는 티탄층과, 상기 티탄층에 도포된 티탄 질화물층을 포함하는 피복 기판을 설치한 스텝과, 티탄과 티탄 질화물층의 급속한 열적 어닐링을 얻기 위해 상기 피복 기판을 가열하는 스텝과, 상기 접촉홀을 거의 채우도록 텅스텐을 증착하는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  22. 제21항에 있어서, 상기 가열 스텝은 5초와 60초 사이의 시간동안 450℃ 내지 550℃범위의 온도로 상기 기판을 노출시키는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  23. 제21항에 있어서, 어닐링된 티탄 질화물층을 실란과 접촉시켜 피복 기판을 패시베이션 처리하는 스텝을 더 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  24. 제23항에 있어서, 텅스텐 헥사플루오라이드를 실란으로 환원시켜 패시베이션 처리된 피복 기판에 핵형성층을 증착시키는 스텝을 더 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
  25. 제21항에 있어서, 상기 텅스텐 증착 스텝은 수소 가스로 텅스텐 헥사플루오라이드를 환원시키는 스텝을 포함하는 것을 특징으로 하는 텅스텐 플러그 형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950065271A 1994-12-30 1995-12-29 새로운 텅스텐 증착방법 KR960026256A (ko)

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