KR960019630A - 볼 그리드 어레이형 반도체 장치 및 그의 제조 방법 - Google Patents

볼 그리드 어레이형 반도체 장치 및 그의 제조 방법 Download PDF

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KR960019630A
KR960019630A KR1019950041959A KR19950041959A KR960019630A KR 960019630 A KR960019630 A KR 960019630A KR 1019950041959 A KR1019950041959 A KR 1019950041959A KR 19950041959 A KR19950041959 A KR 19950041959A KR 960019630 A KR960019630 A KR 960019630A
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leads
semiconductor device
ball grid
metal leads
grid array
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KR1019950041959A
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KR0180331B1 (ko
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나오또 기무라
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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Abstract

볼 그리드 어레이형 반도체 장치에 있어서, 다수의 전극 패드들을 가지는 반도체 칩이 절연체를 경유하여 다수의 플레이너 금속 리이드들에 부착된다. 다수의 전극 패드들 및 상응하는 다수의 금속리드들은 와이어에 의해서 결합된다. 반도체 칩 및 다수의 금속 리이드들은 와이어와 함께 재료로 밀봉된다. 이 밀봉부에서 다수의 금속 리이드들로 통과하는 소정의 수의 구멍들을 레이저 빔 또는 드릴에 의해서 형성되다. 다음에, 땜납 볼은 용융되어 각 땜납 볼들이 다수의 금속 리이들 중의 상응하는 리이드에 연결된다. 최종적으로, 다수의 금속 리이드들은 밀봉부의 외부표면에서 절단된다.

Description

볼 그리드 어레이형 반도체 장치 및 그의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예에 따른 볼 그리드 어레이형 반도체 장치를 나타내는 횡단면도.

Claims (19)

  1. 볼 그리드 어레이형 반도체 장치의 제조 방법에 있어서, 다수이 전극 패드와 다수의 금속 리이드를 가지는 반도체 칩을 제공하여 상기 반도체 칩 및 상기 다수의 금속 리이드들이 전기적으로 절연되는 단계, 상기 다수의 전극 패드 및 상기 다수의 상응하는 금속 리이드를 와이어에 의해서 결합시키는 단계, 상기 반도체 칩 및 상기 다수의 금속 리이드를 상기 와이어와 함께 밀봉시키는 단계, 상기 밀봉부를 상기 다수의 금속 리이드까지 관통하는 소정의 수의 구멍을 개구하는 단계, 및, 땜납 볼들을 용융시켜 상기 땜납 볼들 각각을 상기 구멍들을 통하여 상기 다수의 금속 리이드들 중의 상응하는 하나에 연결하는 단계들로 이루어지는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  2. 제1항에 있어서, 상기 밀봉 단계가 상기 다수의 금속 리이드들 각각의 전체를 밀봉하는 것을 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  3. 제1항에 있어서, 상기 밀봉 단계가 상기 다수의 금속 리이드들 각각의 일부분을 밀봉하는 것을 포함하며, 또한, 상기 방법이 상기 반도체 장치가 돌출 리이드부를 가지도록 상기 밀봉부의 외부표면으로부터 소정의 거리의 위치에서 상기 다수의 금속 리이드들을 절단하는 단계를 또한 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  4. 제3항에 있어서, 상기 돌출 리이드부를 사용하는 상기 반도체 장치를 테스트하는 단계를 또한 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  5. 제4항에 있어서, 상기 테스팅 단계후에 상기 돌출 리이드부를 절단하는 단계를 또한 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  6. 제1항 내지 제5항 중의 어느 한 항에 있어서, 상기 소정의 수의 구멍들을 개구하는 단계가, 상기 패키지가 상기 구멍들에 상응하는 위치에서 오목부를 가지도록 수지로 패키지를 형성하는 단계, 및, 상기 다수의 금속 리이드들에 도달하는 상기 구멍들을 형성하는 단계들을 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  7. 제6항에 있어서, 상기 구멍들을 형성하는 단계가 레이저 빔, 기계적 수단 또는 화학적 수단들 중의 하나에 의해서 상기 구멍을 형성하는 것을 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  8. 제1항 내지 제5항 중의 어느 한 항에 있어서, 상기 다수의 금속리이드들이 서로 실직적으로 평행이 되도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  9. 제1항 내지 제5항 중의 어느 한 항에 있어서, 상기 다수의 금속리이드들 중의 두개의 근접한 리이드에 한 방향으로 동일한 공간을 가지도록 구비됨을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  10. 제8항에 있어서, 상기 다수의 금속 리이드들이 상기 반도체 칩의 주변부를 실질적으로 비스듬히 가로지르도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  11. 제8항에 있어서, 상기 다수의 금속 리이드들이 상기 반도체 칩의 주변부를 실질적으로 수직으로 가로지르도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  12. 제1항 내지 제5항 중의 어느 한 항에 있어서, 상기 밀봉 단계가 써머셋팅 수지로 상기 와이어와 함께 상기 반도체 칩 및 상기 다수의 금속 리이드를 밀봉하는 것을 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치의 제조 방법.
  13. 다수의 전극 패드를 가지는 반도체 칩, 다수의 전기 전도성 리이드로서, 상기 반도체 칩이 상기 다수의 리이드들상에 장착되어 상기 반도체 칩이 상기 다수의 리이드들로부터 전기적으로 절연되며, 상기 반도체 칩의 상기 다수의 전극 패드가 전기 전도성 와이어에 의해서 상기 다수의 리이드들중의 상응하는 하나에 연결되는 다수의 전기 전도성리이드, 상기 다수의 리이드들에 전기 전도적으로 연결된 땜납 볼들을 구비하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
  14. 제13항에 있어서, 상기 다수의 리이드들 및 상기 반도체 칩을 상기 와이어와 함께 밀봉하는 밀봉부재로서 상기 밀봉 부재가 상기 땜납 볼을 위한 구멍을 갖는 밀봉부재를 또한 포함하는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
  15. 제13항 또는 제14항에 있어서, 상기 밀봉 부재가 써머셋팅 수지로 이루어지는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
  16. 제13항 또는 제14항에 있어서, 상기 다수의 리이드들이 서로 실질적으로 평행이 되도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
  17. 제13항 또는 제14항에 있어서, 상기 다수이 리이드들이 근접한 두개의 리이드들 사이에 한 방향으로 소정의 공간을 가지도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
  18. 제13항 또는 제14항에 있어서, 상기 다수의 리이드들이 상기 반도체 침의 주변부를 실질적으로 비스듬히 가로지르도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
  19. 제13항 또는 제14항에 있어서, 상기 다수의 리이드들이 상기 반도체 침의 주변부를 실질적으로 수직으로 가로지르도록 구비되는 것을 특징으로 하는 볼 그리드 어레이형 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950041959A 1994-11-22 1995-11-17 볼 그리드 어레이형 반도체 장치 및 그의 제조방법 KR0180331B1 (ko)

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JP6287717A JPH08148603A (ja) 1994-11-22 1994-11-22 ボールグリッドアレイ型半導体装置およびその製造方法

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