KR960012394A - 은 접점이 이동하지 않는 회로 구조 - Google Patents

은 접점이 이동하지 않는 회로 구조 Download PDF

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KR960012394A
KR960012394A KR1019950031316A KR19950031316A KR960012394A KR 960012394 A KR960012394 A KR 960012394A KR 1019950031316 A KR1019950031316 A KR 1019950031316A KR 19950031316 A KR19950031316 A KR 19950031316A KR 960012394 A KR960012394 A KR 960012394A
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contact
silver
substrate
rim
moving
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KR1019950031316A
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KR0173510B1 (ko
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피. 웬 쳉
에스. 웡 와흐
치앙 민웬
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완다 케이. 덴슨-로우
휴우즈 에어크라프트 캄파니
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Abstract

기판과 접촉하는 산화가능한 은 접점 주위에 도전성 림을 제공함으로써 은 이동을 방지하는 집적 회로 어셈블리. 전형적으로, 은 접점은 각 접점-패드 접합에 있는 접촉 전위를 갖는 기판상에 각 금속 패드에 의해 지지된다. 여러 가지 응용에서 전기 회로는 접점들간에 전위차를 발생시키고 그 표면에 전계를 생성하기 위해 접점을 통해 전기적 신호를 전송한다. 도전성 림은 산화된 접점 표면의 이온화를 금지하고 금속 패드와 기판을 가로지르는 은 이동을 방지하도록 전계와 접촉 전위를 감소시키는데 충분히 적은 일 함수를 갖는다.

Description

은 접점이 이동하지 않는 회로 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 플립-칩 마이크로웨이브 모노리식 집적 회로(MMIC)용의 본 발명의 양호한 실시예의 단면도.
제4도는 제3도에 도시된 양호한 실시예의 절취선 4-4를 따른 확대 평면도.

Claims (10)

  1. 기판, 상기 기판상에 떨어져 분리되어 있으며 대기 중에 노출될 때 산화하는 다수의 은 접점, 상기 접점간에 차 전위를 발생시키고 산화된 접점을 이온화시키는데 충분한 강도의 접점 표면에서의 전계를 생성하는 신호를 상기 접점을 통해 전송하는 회로, 및 상기 기판상에 있으며, 상기 접점의 은이 이동하는 것을 방지하기 위해 각 접점을 둘러싸는 다수의 도전성 림을 포함하는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  2. 제1항에 있어서, 상기 림은 상기 림을 지나 이동하는 것을 방지하기 위해 상기 접점으로부터 떨어져 분리되는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  3. 제1항에 있어서, 상기 도전성 림은 상기 전계를 감소시키고 상기 산화된 접점의 이온화를 금지하도록 상기 접점의 외주 주위에 형성되는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  4. 제3항에 있어서, 상기 림의 일 함수는 상기 산화된 접점을 이온화시키는데 필요한 것 미만인 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  5. 제4항에 있어서, 상기 도전성 림의 일 함수는 은의 일 함수와 거의 같거나 그 미만인 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  6. 제5항에 있어서, 상기 도전성 림은 티타늄 또는 알루미늄으로부터 형성되는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  7. 제3항에 있어서, 각각의 은 접점과 관련된 도전성 림을 지지하고 은 보다큰 일 함수를 갖는 상기 기판상의 다수의 금속 패드를 더 포함하고, 상기 도전성 림은 상기 접점을 이온화시키는데 필요한 것 미만인 일 함수를 갖는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  8. 기판, 상기 기판상에 있으며, 은의 일 함수보다 큰 일 함수를 갖는 금속 패드, 대기중에 노출될 때 산화하고 상기 금속 패드와 접촉하는 은 접점, 및 상기 접점 표면상에 형성된 산화층의 외주를 상기 패드와 분리시키기 위해 금속 패드상에 있으며 상기 은 접점의 외주주위에 있음으로써 상기 산화 접점의 이온화를 금지하고 상기 접점이 상기 금속 패드를 가로질러 이동하는 것을 방지하는 림을 포함하는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  9. 제8항에 있어서, 상기 림은 유전 물질로부터 형성되는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
  10. 기판, 상기 기판상에 있으며, 대기 중에 노출될 때 산화하는 은 접점, 및 상기 기판상에 있으며, 상기 접점의 은이 이동하는 것을 방지하기 위해 상기 접점을 둘러싸는 도전성 림을 포함하는 것을 특징으로 하는 이동하지 않는 은 접점 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950031316A 1994-09-27 1995-09-22 은 접점이 이동하지 않는 회로 구조 KR0173510B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/314,461 1994-09-27
US08/314,461 US5514838A (en) 1994-09-27 1994-09-27 Circuit structure with non-migrating silver contacts
US08/314,461 1994-09-27

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KR960012394A true KR960012394A (ko) 1996-04-20
KR0173510B1 KR0173510B1 (ko) 1999-04-01

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US (1) US5514838A (ko)
EP (1) EP0704888A3 (ko)
KR (1) KR0173510B1 (ko)

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US6165284A (en) * 1998-06-25 2000-12-26 Albemarle Corporation Method for inhibiting tarnish formation during the cleaning of silver surfaces with ether stabilized, N-propyl bromide-based solvent systems
EP0993034A3 (en) * 1998-09-28 2001-01-31 Ford Motor Company Method for bonding bumped electronic components to a substrate
US6078103A (en) * 1998-10-29 2000-06-20 Mcdonnell Douglas Corporation Dimpled contacts for metal-to-semiconductor connections, and methods for fabricating same
JP4334054B2 (ja) * 1999-03-26 2009-09-16 株式会社東芝 セラミックス回路基板
JP5156658B2 (ja) * 2009-01-30 2013-03-06 株式会社日立製作所 Ｌｓｉ用電子部材
US10162393B2 (en) 2016-01-13 2018-12-25 Seagate Technology Llc Electrical connector with force balancing
WO2019153121A1 (zh) * 2018-02-06 2019-08-15 深圳市傲科光电子有限公司 混合印刷电路板

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EP0704888A2 (en) 1996-04-03
EP0704888A3 (en) 1997-03-05
KR0173510B1 (ko) 1999-04-01
US5514838A (en) 1996-05-07

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