KR960009013A - 타이타늄 나이트라이드(TiN) 게이트전극 형성방법 - Google Patents

타이타늄 나이트라이드(TiN) 게이트전극 형성방법 Download PDF

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Publication number
KR960009013A
KR960009013A KR1019940020433A KR19940020433A KR960009013A KR 960009013 A KR960009013 A KR 960009013A KR 1019940020433 A KR1019940020433 A KR 1019940020433A KR 19940020433 A KR19940020433 A KR 19940020433A KR 960009013 A KR960009013 A KR 960009013A
Authority
KR
South Korea
Prior art keywords
titanium nitride
depositing
gate electrode
metal material
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019940020433A
Other languages
English (en)
Korean (ko)
Inventor
백충렬
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940020433A priority Critical patent/KR960009013A/ko
Priority to CN95115891A priority patent/CN1123465A/zh
Priority to JP7210865A priority patent/JPH08116057A/ja
Priority to EP95305771A priority patent/EP0697714A1/en
Priority to TW084109230A priority patent/TW271500B/zh
Publication of KR960009013A publication Critical patent/KR960009013A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H10D64/01318—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019940020433A 1994-08-18 1994-08-18 타이타늄 나이트라이드(TiN) 게이트전극 형성방법 Abandoned KR960009013A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019940020433A KR960009013A (ko) 1994-08-18 1994-08-18 타이타늄 나이트라이드(TiN) 게이트전극 형성방법
CN95115891A CN1123465A (zh) 1994-08-18 1995-08-18 构成半导体器件栅极的方法
JP7210865A JPH08116057A (ja) 1994-08-18 1995-08-18 半導体装置のＴｉＮゲート電極の製造方法
EP95305771A EP0697714A1 (en) 1994-08-18 1995-08-18 Method for forming gate electrode of semiconductor device
TW084109230A TW271500B (cg-RX-API-DMAC10.html) 1994-08-18 1995-09-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940020433A KR960009013A (ko) 1994-08-18 1994-08-18 타이타늄 나이트라이드(TiN) 게이트전극 형성방법

Publications (1)

Publication Number Publication Date
KR960009013A true KR960009013A (ko) 1996-03-22

Family

ID=19390663

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940020433A Abandoned KR960009013A (ko) 1994-08-18 1994-08-18 타이타늄 나이트라이드(TiN) 게이트전극 형성방법

Country Status (5)

Country Link
EP (1) EP0697714A1 (cg-RX-API-DMAC10.html)
JP (1) JPH08116057A (cg-RX-API-DMAC10.html)
KR (1) KR960009013A (cg-RX-API-DMAC10.html)
CN (1) CN1123465A (cg-RX-API-DMAC10.html)
TW (1) TW271500B (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100364810B1 (ko) * 2000-02-22 2002-12-16 주식회사 하이닉스반도체 반도체소자의 제조방법
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
KR100589865B1 (ko) * 1997-03-31 2006-09-20 프리스케일 세미컨덕터, 인크. 반도체장치및상기장치를형성하기위한공정

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step
SE9503631D0 (sv) * 1995-10-18 1995-10-18 Abb Research Ltd A method for producing a semiconductor device comprising an implantation step
SE9704150D0 (sv) * 1997-11-13 1997-11-13 Abb Research Ltd Semiconductor device of SiC with insulating layer a refractory metal nitride layer
TW457703B (en) 1998-08-31 2001-10-01 Siemens Ag Micro-electronic structure, method for its production and its application in a memory-cell
KR100345364B1 (ko) * 1998-12-28 2002-09-18 주식회사 하이닉스반도체 반도체 소자의 게이트전극 형성방법
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
FR2977367A1 (fr) 2011-06-30 2013-01-04 St Microelectronics Crolles 2 Transistors dont la grille comprend une couche de nitrure de titane et procede de depot de cette couche
JP5220904B2 (ja) * 2011-08-05 2013-06-26 シャープ株式会社 ＧａＮ系化合物半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100589865B1 (ko) * 1997-03-31 2006-09-20 프리스케일 세미컨덕터, 인크. 반도체장치및상기장치를형성하기위한공정
KR100458294B1 (ko) * 1997-12-30 2005-02-23 주식회사 하이닉스반도체 반도체소자의장벽금속층형성방법
KR100364810B1 (ko) * 2000-02-22 2002-12-16 주식회사 하이닉스반도체 반도체소자의 제조방법

Also Published As

Publication number Publication date
EP0697714A1 (en) 1996-02-21
CN1123465A (zh) 1996-05-29
TW271500B (cg-RX-API-DMAC10.html) 1996-03-01
JPH08116057A (ja) 1996-05-07

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