KR960008501B1 - Image projection method, semiconductor device manufacturing method using the same and projection exposure apparatus for semiconductor device manufacture - Google Patents
Image projection method, semiconductor device manufacturing method using the same and projection exposure apparatus for semiconductor device manufacture Download PDFInfo
- Publication number
- KR960008501B1 KR960008501B1 KR92013847A KR920013847A KR960008501B1 KR 960008501 B1 KR960008501 B1 KR 960008501B1 KR 92013847 A KR92013847 A KR 92013847A KR 920013847 A KR920013847 A KR 920013847A KR 960008501 B1 KR960008501 B1 KR 960008501B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- exposure apparatus
- same
- device manufacturing
- image projection
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/46—Systems using spatial filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/50—Optics for phase object visualisation
- G02B27/52—Phase contrast optics
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP91-194132 | 1991-08-02 | ||
JP3194132A JPH0536586A (ja) | 1991-08-02 | 1991-08-02 | 像投影方法及び該方法を用いた半導体デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930005116A KR930005116A (ko) | 1993-03-23 |
KR960008501B1 true KR960008501B1 (en) | 1996-06-26 |
Family
ID=16319444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92013847A KR960008501B1 (en) | 1991-08-02 | 1992-07-31 | Image projection method, semiconductor device manufacturing method using the same and projection exposure apparatus for semiconductor device manufacture |
Country Status (5)
Country | Link |
---|---|
US (2) | US5608575A (ko) |
EP (2) | EP0526242B1 (ko) |
JP (1) | JPH0536586A (ko) |
KR (1) | KR960008501B1 (ko) |
DE (2) | DE69230443T2 (ko) |
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JP3165711B2 (ja) * | 1991-08-02 | 2001-05-14 | キヤノン株式会社 | 像投影方法及び該方法を用いた半導体デバイスの製造方法 |
JPH0547628A (ja) * | 1991-08-09 | 1993-02-26 | Canon Inc | 像投影方法及びそれを用いた半導体デバイスの製造方法 |
JPH0567558A (ja) * | 1991-09-06 | 1993-03-19 | Nikon Corp | 露光方法 |
NL194929C (nl) * | 1992-10-20 | 2003-07-04 | Samsung Electronics Co Ltd | Projectiebelichtingssysteem. |
US5729331A (en) * | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
JPH07122478A (ja) * | 1993-10-27 | 1995-05-12 | Sony Corp | パターン投影方法 |
JP3186011B2 (ja) * | 1994-06-24 | 2001-07-11 | キヤノン株式会社 | 投影露光装置及びデバイス製造方法 |
JP3046270U (ja) * | 1995-01-31 | 1998-03-06 | 康司 栗原 | 十字ピン型アンカー |
JPH0950958A (ja) * | 1995-05-29 | 1997-02-18 | Nikon Corp | 照明光学装置及びそれを備えた投影露光装置 |
DE19548805A1 (de) * | 1995-12-27 | 1997-07-03 | Zeiss Carl Fa | REMA-Objektiv für Mikrolithographie-Projektionsbelichtungsanlagen |
EP0797121B1 (en) * | 1996-03-18 | 2003-06-11 | Matsushita Electric Industrial Co., Ltd. | Exposure apparatus |
JPH09320945A (ja) * | 1996-05-24 | 1997-12-12 | Nikon Corp | 露光条件測定方法及び露光装置 |
JPH10153866A (ja) * | 1996-11-22 | 1998-06-09 | Nikon Corp | 照明装置および該照明装置を備えた露光装置 |
US7130129B2 (en) | 1996-12-21 | 2006-10-31 | Carl Zeiss Smt Ag | Reticle-masking objective with aspherical lenses |
US6027865A (en) * | 1997-02-10 | 2000-02-22 | Texas Instruments Incorporated | Method for accurate patterning of photoresist during lithography process |
US6563567B1 (en) * | 1998-12-17 | 2003-05-13 | Nikon Corporation | Method and apparatus for illuminating a surface using a projection imaging apparatus |
WO2001020733A1 (fr) * | 1999-09-10 | 2001-03-22 | Nikon Corporation | Source lumineuse et procede de commande de stabilisation de longueur d'onde, appareil et procede d'exposition, procede de production d'un appareil d'exposition et procede de fabrication d'un dispositif et dispositif associe |
US6468815B1 (en) * | 2000-01-03 | 2002-10-22 | Advanced Micro Devices, Inc. | Overlay radius offset shift engine |
US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
DE10031719A1 (de) * | 2000-06-29 | 2002-01-10 | Leica Microsystems | Beleuchtungseinrichtung und Koordinaten-Meßgerät mit einer Beleuchtungseinrichtung |
US7092073B2 (en) | 2000-07-07 | 2006-08-15 | Asml Netherlands B.V. | Method of illuminating a photomask using chevron illumination |
EP1184727A1 (en) * | 2000-09-01 | 2002-03-06 | Asm Lithography B.V. | Lithographic apparatus |
KR100583692B1 (ko) * | 2000-09-01 | 2006-05-25 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 작동 방법, 리소그래피 장치, 디바이스제조방법, 및 이것에 의해 제조된 디바이스 |
EP1426826A3 (en) | 2002-12-02 | 2006-12-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1426823A1 (en) * | 2002-12-02 | 2004-06-09 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
TWI281099B (en) * | 2002-12-02 | 2007-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
AU2002363884A1 (en) * | 2002-12-19 | 2004-07-14 | Carl Zeiss Smt Ag | Method and system for measuring the reproduction quality of an optical reproduction system |
US7196772B2 (en) * | 2003-11-07 | 2007-03-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7397535B2 (en) * | 2005-12-21 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589832B2 (en) * | 2006-08-10 | 2009-09-15 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method |
JP4635085B2 (ja) | 2008-03-03 | 2011-02-16 | 株式会社東芝 | 半導体装置の製造方法 |
US20090257043A1 (en) * | 2008-04-14 | 2009-10-15 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system |
US9389519B2 (en) * | 2010-02-25 | 2016-07-12 | Nikon Corporation | Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method |
DE102011003066A1 (de) * | 2010-02-26 | 2011-09-01 | Carl Zeiss Smt Gmbh | Verfahren zum belastungsgerechten Betrieb einer Projektionsbelichtungsanlage sowie entsprechende Projektionsbelichtungsanlage |
US10144969B2 (en) | 2011-06-15 | 2018-12-04 | Colgate-Palmolive Company | Compositions and methods for diagnosing and monitoring hyperthyroidism in a feline |
TWI656409B (zh) * | 2015-09-09 | 2019-04-11 | 美商克萊譚克公司 | 基於輔助電磁場之引入之一階散射測量疊加之新方法 |
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US5424803A (en) * | 1991-08-09 | 1995-06-13 | Canon Kabushiki Kaisha | Projection exposure apparatus and semiconductor device manufacturing method |
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JP2760931B2 (ja) * | 1993-03-10 | 1998-06-04 | 株式会社 栗本鐵工所 | 注液機構付混練機 |
-
1991
- 1991-08-02 JP JP3194132A patent/JPH0536586A/ja active Pending
-
1992
- 1992-07-31 KR KR92013847A patent/KR960008501B1/ko not_active IP Right Cessation
- 1992-07-31 EP EP92307014A patent/EP0526242B1/en not_active Expired - Lifetime
- 1992-07-31 DE DE69230443T patent/DE69230443T2/de not_active Expired - Lifetime
- 1992-07-31 DE DE69207106T patent/DE69207106T2/de not_active Expired - Lifetime
- 1992-07-31 EP EP94201436A patent/EP0614097B1/en not_active Expired - Lifetime
-
1995
- 1995-06-07 US US08/479,387 patent/US5608575A/en not_active Expired - Lifetime
- 1995-06-07 US US08/483,866 patent/US5631773A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0526242B1 (en) | 1995-12-27 |
EP0614097B1 (en) | 1999-12-15 |
DE69230443T2 (de) | 2000-05-18 |
DE69230443D1 (de) | 2000-01-20 |
EP0614097A1 (en) | 1994-09-07 |
DE69207106T2 (de) | 1996-05-15 |
KR930005116A (ko) | 1993-03-23 |
EP0526242A1 (en) | 1993-02-03 |
DE69207106D1 (de) | 1996-02-08 |
US5608575A (en) | 1997-03-04 |
JPH0536586A (ja) | 1993-02-12 |
US5631773A (en) | 1997-05-20 |
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