KR960002574A - 반도체소자의 게이트전극 형성방법 - Google Patents

반도체소자의 게이트전극 형성방법 Download PDF

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KR960002574A
KR960002574A KR1019940014569A KR19940014569A KR960002574A KR 960002574 A KR960002574 A KR 960002574A KR 1019940014569 A KR1019940014569 A KR 1019940014569A KR 19940014569 A KR19940014569 A KR 19940014569A KR 960002574 A KR960002574 A KR 960002574A
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South Korea
Prior art keywords
gate electrode
forming
semiconductor device
formation method
electrode formation
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KR1019940014569A
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English (en)
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KR0131718B1 (ko
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설여송
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김주용
현대전자산업 주식회사
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Priority to KR1019940014569A priority Critical patent/KR0131718B1/ko
Publication of KR960002574A publication Critical patent/KR960002574A/ko
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Publication of KR0131718B1 publication Critical patent/KR0131718B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체소자의 게이트전극 형성방법에 관한 것으로, 종래기술에서 감광막을 이용한 리소그래피 공정으로 초고집적소자에서 필요로 하는 미세선폭의 게이트전극을 형성할 수 없는 문제점을 해결하기 위하여, 게이트전극용 다결정실리콘막의 상부에 텅스텐층을 증착하고 고압력의 SF6/ Cl2플라즈마 분위기에서 MERIE장비를 이용한 바스크공정으로 0.1㎛ 폭의 게이트전극을 형성함으로써 1기가 디램의 트랜지스터 제작 및 성능테스트를 가능하게 하여 반도체소자의 신뢰성 및 생산성을 향상시킬 수 있는 기술이다.

Description

반도체소자의 게이트전극 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a도 내지 제2c도는 본 발명의 실시예에 의한 반도체소자의 게이트 전극 형성공정을 도시한 단면도.

Claims (3)

  1. 반도체소자의 게이트전극 형성방법에 있어서, 반도체기판 상부에 게이트산화막, 게이트전극용 다결정실리콘막 및 텅스텐층을 일정두께 증착하고 그 상부에 감광막패턴을 형성하는 공정과, 상기 감광막패턴을 마스크로 하여 일정압력 이상의 플라즈마 분위기에서 게이트전극 마스크와 텅스텐층패턴을 형성하는 공정과, 상기 게이트전극 마스크와 텅스텐층패턴을 이용하여 상기 게이트전극용 다결정실리콘막을 식각하고 상기 게이트전극 마스크를 제거함으로써 텅스텐층패턴과 게이트전극용 다결정실리콘막패턴의 이중구조로 게이트전극을 형성하는 공정을 포함하는 반도체소자의 게이트전극 형성방법.
  2. 제1항에 있어서, 상기 일정압력은 400 m Torr 이상으로하는 것을 특징으로 하는 반도체소자의 게이트전극 형성방법.
  3. 제1항에 있어서, 상기 건식방법은 SF6/ Cl2플라즈마 분위기에서 실시하는 것을 특징으로하는 반도체소자의 게이트전극 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940014569A 1994-06-24 1994-06-24 반도체소자의 게이트전극 형성방법 KR0131718B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940014569A KR0131718B1 (ko) 1994-06-24 1994-06-24 반도체소자의 게이트전극 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940014569A KR0131718B1 (ko) 1994-06-24 1994-06-24 반도체소자의 게이트전극 형성방법

Publications (2)

Publication Number Publication Date
KR960002574A true KR960002574A (ko) 1996-01-26
KR0131718B1 KR0131718B1 (ko) 1998-04-14

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Application Number Title Priority Date Filing Date
KR1019940014569A KR0131718B1 (ko) 1994-06-24 1994-06-24 반도체소자의 게이트전극 형성방법

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KR0131718B1 (ko) 1998-04-14

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