KR950703207A - 다중칩 모듈 합체용 금속 전자 패키지(Metal electronic package incorparating a multi-chip module) - Google Patents
다중칩 모듈 합체용 금속 전자 패키지(Metal electronic package incorparating a multi-chip module) Download PDFInfo
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- KR950703207A KR950703207A KR1019950700681A KR19950700681A KR950703207A KR 950703207 A KR950703207 A KR 950703207A KR 1019950700681 A KR1019950700681 A KR 1019950700681A KR 19950700681 A KR19950700681 A KR 19950700681A KR 950703207 A KR950703207 A KR 950703207A
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- metal
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Abstract
하이브리드 회로(42)를 지지하기 위한 리드프레임 조립체(40)를 제공한다. 이 하이브리드 회로(42)는 전자 패키지(70)의 베이스(12)나 다이부착 패클(20)에 의해 지지되며 와이머 본드(28)에 의해 리드프레임(16)에 전기적으로 접속된다. 복수의 반도체 장치(24)는 조립체(40)상에 장착되며 하이브리드 회로(42)상에 형성된 금속 피복 패드(46´), 하이브리드 회로(42)의 절연층(44), 다이부착 패클(20), 금속 패키지 베이스(12) 중 어느 하나에 의해 또는 이들의 결합에 의해 지지된다.(제4도)
Description
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Claims (23)
- (정정) 복수의 반도체 장치(24)를 전기적으로 접속하기 위한 리드프레임 조립체(40)에 있어서, 무기 절연층(56)으로 적어도 부분적으로 피복된 금속 베이스부재(12); 중앙영역을 한정하는 내부 리드단부(34)를 가진 리드프레임; 상기 금속 베이스 부재(12)에 접합되어 있고 회로선(46)을 지지하고 있는 절연기판(44)을 포함하고 상기 회로선(46)의 적어도 일부분을 상기 내부리드 단부에 전기적으로 접속하기 위한 제1수단(28, 50)과 복수의 반도체 장치(24)를 지지하기 위한 제2수단(12, 20, 44, 46´)을 구비하고 있은 하이브리드 회로(42); 및 상기 리드프레임(34)과 상기 하이브리드 회로(42) 양자를 상기 금속 베이스 부재(12)에 개별적으로 접합하기 위한 제3수단(22)으로 이루어진 것을 특징으로 하는 리드프레임 조립체.
- (정정) 제1항에 있어서, 상기 제1수단(28, 50)은 금속 피복된 중재용 패드(46˝), 상기 절연기판에서 상기 내부 리드 단부로 연장하는 금속 박편(50) 및 상기 내부리드 단부(34)의 접합용 금속 패드(46′)로 이루어진 군에서 선택되는 것을 특징으로 하는 리드프레임 조립체.
- 제2항에 있어서, 상기 제1수단(50)은 서모소닉 접합, 열 압착 접합, 솔더링 및 전도성 접착제로 이루어진 군에서 선택된 수단으로 접합(52)되는, 상기 절연기판(44)에서 상기 내부 리드 단부(34)로 연장하는, 금속 박편(50)인 것을 특징으로 하는 리드프레임 조립체.
- 제3항에 있어서, 상기 금속박편은 금-주석 합금 및 납-주석 합금으로 이루어진 군에서 선택된 솔더로 상기 리드프레임에 접합되는 것을 특징으로 하는 리드프레임 조립체.
- 제3항에 있어서, 상기 제1수단(50)은 서모소닉 접합, 열압착접합, 솔더링 및 전도성 폴리머 접착제로 이루어진 군에서 선택된 수단으로 상기 내부 리드 단부(34)에 접합(52)된 금속 피복된 접합 패드(46´)인 것을 특징으로 하는 리드프레임 조립체.
- 제3항에 있어서, 상기 제1수단(50)은 금-주석 합금 및 납-주석 합금으로 이루어진 군에서 선택된 솔더로 솔더링(52)하는 것을 특징으로 하는 리드프레임 조립체.
- 제3항에 있어서, 상기 제2수단은 상기 절연기판(44)상에 형성된 금속피복된 패드(46´)에 대한 상기 복수의 분리된 반도체 장치(24)의 접합, 상기 절연기판(44)에 대한 상기 복수의 분리된 반도체 장치(24)의 직접 접합 및 이들의 결합으로 이루어진 군에서 선택되는 것을 특징으로 하는 리드프레임 조립체.
- 제7항에 있어서, 상기 복수의 분리된 반도체 장치(24)중 적어도 하나(24a)는 상기 절연기판(44)상에 형성된 금속피복된 패드(46´)에 접합되며, 상기 금속피복된 패드(46´)는 상기 리드프레임(34)이나 상기 복수의 분리된 반도체 장치(24)중 다른 것에 전기적으로 접속되는 것을 특징으로 하는 리드프레임 조립체.
- 제3항에 있어서, 상기 제3수단(22)은 폴리머 및 실링 글라스로 이루어진 군에서 선택되는 것을 특징으로 하는 리드프레임 조립체.
- 제9항에 있어서, 상기 제3수단(22)은 열전도성을 증가시키는 재료가 충전된 열경화 폴리머를 포함하는 것을 특징으로 하는 리드프레임 조립체.
- 제9항에 있어서, 무기 절연층(56)이 상기 금속 베이스 부재(12)와 상기 제3접합 수단(22) 사이에 배치되어 있는 것을 특징으로 하는 리드프레임 조립체.
- 제11항에 있어서, 상기 금속 베이스 부재(12)는 알루미늄 또는 알루미늄 기제 합금으로 형성되며 상기 무기 절연층(56)은 양극 산화층인 것을 특징으로 하는 리드프레임 조립체.
- 제11항에 있어서, 상기 금속 베이스 부재(12)는 약 2 내지 12%의 알루미늄을 함유하는 구리 기체 합금이며 상기 무기 절연층(56)은 자연위치에 형성된 내열성 산화물인 것을 특징으로 하는 리드프레임 조립체.
- 제11항에 있어서, 상기 금속 베이스 부재(12)는 니켈 및 알루미늄으로 이루어진 군에서 선택된 제2금속 또는 합금으로 피복된 구리 또는 구리기제 합금이며 상기 무기 절연층(56)은 상기 피복으로 형성된 내열성 산화물인 것을 특징으로 하는 리드프레임 조립체.
- 제2항에 있어서, 상기 제1수단은 상기 내부 리드 단부(34)를 상기 회로선(46)에 직접 접합하기 위한 금속 피복된 접합 패드(46´)이며 상기 접합 수단(52)는 솔더 및 전도성 접착제로 이루어진 군에서 선택되는 것을 특징으로 하는 리드프레임 조립체.
- 제15항에 있어서, 상기 제2수단(12, 44, 46´, 56)은 상기 절연기판(44)상에 형성된 금속 피복 패드(46´)에 대한 상기 복수의 반도체 장치(24)의 접합, 상기 절연기판(44)에 대한 상기 복수의 반도체 장치(24)의 접합, 상기 금속 베이스부재(12)에 대한 상기 복수의 반도체 장치(24)의 접합 및 이들의 결합으로 이루어진 군에서 선택되는 것을 특징으로 하는 리드프레임 조립체.
- 제16항에 있어서, 상기 복수의 반도체 장치(24)중 적어도 하나(24a)는 상기 절연기판(44)상에 형성된 금속 피복된 패드(46´)에 접합되어 있고 상기 금속 피복 패드(46´)는 상기 리드프레임(34)이나 다른 반도체 장치(24)에 전기적으로 접속되어 있는 것을 특징으로 하는 리드프레임 조립체.
- 복수의 반도체 장치(24)를 전기적으로 접속하기 위한 리드프레임 조립체(40)에 있어서, 금속 베이스 부재(12); 적어도 하나의 중앙영역을 한정하는 내부리드 단부(34)를 가지고 있는 리드프레임; 상기 적어도 하나의 중앙 영역내에 위치된 복수의 다이 부착 패들(20; 및 상기 리드 프레임(34)와 상기 복수의 다이부착 패들(20) 양자를 상기 금속 베이스 부재(12)에 접합하기 위한 절연 접합 수단(22)으로 이루어진 것을 특징으로 하는 리드프레임 조립체.
- 제18항에 있어서, 상기 절연 접합 수단(22)은 열경화 폴리머, 열가소성 폴리머 및 실링 글라스로 이루어진 군에서 선택되는 것을 특징으로 하는 리드프레임 조립체.
- 제19항에 있어서, 무기 절연층(56)이 상기 금속 베이스부재(12)와 상기 절연 접합 수단(22) 사이에 배치되어 있는 것을 특징으로 하는 리드프레임 조립체.
- 제19항에 있어서, 상기 리드프레임(34)은 와이어 본드(28) 및 TAB 본드(50)로 이루어진 군에서 선택된 수단으로 상기 복수의 반도체 장치(24)에 전기적으로 접속되어 있는 것을 특징으로 하는 리드프레임 조립체.
- 제21항에 있어서, 상기 리드프레임(34)으로부터 분리되어 있고 와이어 본드(28) 및 TAB 본드(50)로 이루어진 군에서 선택된 수단에 의해 복수의 반도체 장치(24)중 적어도 하나에 또는 상기 리드프레임(34)에 전기적으로 접속되거나 이들 양자(24, 34)에 전기적을 접속되어 있는 전기 전도성 부분(66)을 포함하는 것을 특징으로 하는 리드프레임 조립체.
- 복수의 집적회로 장치(24)를 수용하기 위한 전자 패키지(70)에 있어서, 무기 절연층(56)으로 적어도 부분적으로 피복된 금속 베이스 부재(12); 커버부재(14); 상기 금속 베이스 부재(12)와 상기 커버 부재(14) 사이에 배치되어 이들 양자에 접합(18)되고, 적어도 하나의 중앙 영역을 한정하는 내부 리드 단부(34)를 갖고 있는 리드프레임(16); 및 상기 중앙영역에 인접해 있고 상기 내부 리드 단부에 전기적으로 접속(28)되어 있는 회로 조립체(42)를 포함하는 것을 특징으로 하는 전자 패키지.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93327092A | 1992-08-21 | 1992-08-21 | |
US933270 | 1992-08-21 | ||
PCT/US1993/007162 WO1994005038A1 (en) | 1992-08-21 | 1993-08-02 | Metal electronic package incorporating a multi-chip module |
Publications (1)
Publication Number | Publication Date |
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KR950703207A true KR950703207A (ko) | 1995-08-23 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019950700681A KR950703207A (ko) | 1992-08-21 | 1993-08-02 | 다중칩 모듈 합체용 금속 전자 패키지(Metal electronic package incorparating a multi-chip module) |
Country Status (9)
Country | Link |
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US (2) | US5504372A (ko) |
EP (1) | EP0656150A4 (ko) |
JP (1) | JPH08500469A (ko) |
KR (1) | KR950703207A (ko) |
AU (1) | AU4793893A (ko) |
CA (1) | CA2142866A1 (ko) |
MX (1) | MX9305074A (ko) |
TW (1) | TW238419B (ko) |
WO (1) | WO1994005038A1 (ko) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5360942A (en) * | 1993-11-16 | 1994-11-01 | Olin Corporation | Multi-chip electronic package module utilizing an adhesive sheet |
JPH07211856A (ja) * | 1994-01-12 | 1995-08-11 | Fujitsu Ltd | 集積回路モジュール |
GB2317990B (en) * | 1994-01-12 | 1998-08-12 | Fujitsu Ltd | Hybrid integrated circuit module |
US5757070A (en) * | 1995-10-24 | 1998-05-26 | Altera Corporation | Integrated circuit package |
US5877551A (en) * | 1996-11-18 | 1999-03-02 | Olin Corporation | Semiconductor package having a ground or power ring and a metal substrate |
JP3476612B2 (ja) * | 1995-12-21 | 2003-12-10 | 三菱電機株式会社 | 半導体装置 |
US6730991B1 (en) * | 1996-06-11 | 2004-05-04 | Raytheon Company | Integrated circuit chip package |
US5778520A (en) * | 1996-07-03 | 1998-07-14 | Kim; Jong Tae | Method of making an assembly package in an air tight cavity and a product made by the method |
DE19730118B4 (de) | 1997-07-14 | 2006-01-12 | Infineon Technologies Ag | Verfahren und Vorrichtung zur Herstellung einer Chip-Substrat-Verbindung |
US6133634A (en) * | 1998-08-05 | 2000-10-17 | Fairchild Semiconductor Corporation | High performance flip chip package |
TW451535B (en) | 1998-09-04 | 2001-08-21 | Sony Corp | Semiconductor device and package, and fabrication method thereof |
US6285075B1 (en) * | 1998-11-02 | 2001-09-04 | Asat, Limited | Integrated circuit package with bonding planes on a ceramic ring using an adhesive assembly |
JP3180794B2 (ja) * | 1999-02-19 | 2001-06-25 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6369452B1 (en) * | 1999-07-27 | 2002-04-09 | International Business Machines Corporation | Cap attach surface modification for improved adhesion |
US6710454B1 (en) * | 2000-02-16 | 2004-03-23 | Micron Technology, Inc. | Adhesive layer for an electronic apparatus having multiple semiconductor devices |
JP3679687B2 (ja) * | 2000-06-08 | 2005-08-03 | 三洋電機株式会社 | 混成集積回路装置 |
KR100375720B1 (ko) * | 2000-10-09 | 2003-03-15 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법 |
US7345316B2 (en) * | 2000-10-25 | 2008-03-18 | Shipley Company, L.L.C. | Wafer level packaging for optoelectronic devices |
US6932519B2 (en) | 2000-11-16 | 2005-08-23 | Shipley Company, L.L.C. | Optical device package |
US6827503B2 (en) * | 2000-12-01 | 2004-12-07 | Shipley Company, L.L.C. | Optical device package having a configured frame |
US6883977B2 (en) | 2000-12-14 | 2005-04-26 | Shipley Company, L.L.C. | Optical device package for flip-chip mounting |
US6876071B2 (en) * | 2001-06-30 | 2005-04-05 | Texas Instruments Incorporated | Masking layer in substrate cavity |
JP2003086723A (ja) * | 2001-09-14 | 2003-03-20 | Nec Schott Components Corp | 薄型金属パッケージ |
US20030102249A1 (en) * | 2001-12-03 | 2003-06-05 | Azimuth Industrial Co. Inc. | Method and apparatus for an air-cavity package |
US6630373B2 (en) * | 2002-02-26 | 2003-10-07 | St Assembly Test Service Ltd. | Ground plane for exposed package |
US20030178719A1 (en) * | 2002-03-22 | 2003-09-25 | Combs Edward G. | Enhanced thermal dissipation integrated circuit package and method of manufacturing enhanced thermal dissipation integrated circuit package |
US7119437B2 (en) * | 2002-12-26 | 2006-10-10 | Yamaha Hatsudoki Kabushiki Kaisha | Electronic substrate, power module and motor driver |
JP3846437B2 (ja) * | 2003-03-17 | 2006-11-15 | 株式会社日立製作所 | 自動車用コントロールユニット |
US7039273B2 (en) * | 2003-08-12 | 2006-05-02 | Tyler Sims | Solder seals within a switching system |
US6919623B2 (en) * | 2003-12-12 | 2005-07-19 | The Boeing Company | Hydrogen diffusion hybrid port and method of forming |
JP2005191148A (ja) * | 2003-12-24 | 2005-07-14 | Sanyo Electric Co Ltd | 混成集積回路装置およびその製造方法 |
US20050253282A1 (en) * | 2004-04-27 | 2005-11-17 | Daoqiang Lu | Temperature resistant hermetic sealing formed at low temperatures for MEMS packages |
US7161232B1 (en) * | 2004-09-14 | 2007-01-09 | National Semiconductor Corporation | Apparatus and method for miniature semiconductor packages |
TWM262840U (en) * | 2004-10-05 | 2005-04-21 | Harvatek Corp | Substrate of semiconductor |
KR100656295B1 (ko) * | 2004-11-29 | 2006-12-11 | (주)웨이브닉스이에스피 | 선택적 양극 산화된 금속을 이용한 패키지 및 그 제작방법 |
US7473889B2 (en) * | 2004-12-16 | 2009-01-06 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Optical integrated circuit package |
TW200711080A (en) * | 2005-02-23 | 2007-03-16 | Lg Micron Ltd | Lead frame |
US7230333B2 (en) | 2005-04-21 | 2007-06-12 | International Rectifier Corporation | Semiconductor package |
DE102005032076B3 (de) * | 2005-07-08 | 2007-02-08 | Infineon Technologies Ag | Verfahren zum Herstellen eines Schaltungsmoduls |
JP4575247B2 (ja) * | 2005-07-11 | 2010-11-04 | 株式会社東芝 | 高周波パッケージ装置 |
JP5023461B2 (ja) * | 2005-09-27 | 2012-09-12 | 富士ゼロックス株式会社 | 圧電素子、液滴吐出ヘッド、液滴吐出装置、圧電素子の製造方法 |
DE112006003866B4 (de) * | 2006-03-09 | 2019-11-21 | Infineon Technologies Ag | Eine elektronische Mehrfachchip-Baugruppe mit reduzierter Spannung und Verfahren zu deren Herstellung |
US7629675B2 (en) * | 2006-05-03 | 2009-12-08 | Marvell International Technology Ltd. | System and method for routing signals between side-by-side die in lead frame type system in a package (SIP) devices |
US20080054429A1 (en) * | 2006-08-25 | 2008-03-06 | Bolken Todd O | Spacers for separating components of semiconductor device assemblies, semiconductor device assemblies and systems including spacers and methods of making spacers |
US20080156475A1 (en) * | 2006-12-28 | 2008-07-03 | Daewoong Suh | Thermal interfaces in electronic systems |
KR101221807B1 (ko) * | 2006-12-29 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 |
JP2008172172A (ja) * | 2007-01-15 | 2008-07-24 | Denso Corp | 電子制御装置及びその製造方法 |
JP4404141B2 (ja) * | 2008-01-07 | 2010-01-27 | オムロン株式会社 | 光伝送モジュールの基板を補強する補強部品を備えた光伝送モジュールおよび該光伝送モジュールを備えた電子機器 |
US7727808B2 (en) | 2008-06-13 | 2010-06-01 | General Electric Company | Ultra thin die electronic package |
DE102009000514A1 (de) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Verbundbauteil sowie Verfahren zum Herstellen eines Verbundbauteil |
US8184440B2 (en) * | 2009-05-01 | 2012-05-22 | Abl Ip Holding Llc | Electronic apparatus having an encapsulating layer within and outside of a molded frame overlying a connection arrangement on a circuit board |
CN103025122A (zh) * | 2011-09-23 | 2013-04-03 | 联想(北京)有限公司 | 一种电子设备 |
US8951847B2 (en) | 2012-01-18 | 2015-02-10 | Intersil Americas LLC | Package leadframe for dual side assembly |
US8906747B2 (en) | 2012-05-23 | 2014-12-09 | Freescale Semiconductor, Inc. | Cavity-type semiconductor package and method of packaging same |
DE102012213917A1 (de) * | 2012-08-06 | 2014-02-20 | Robert Bosch Gmbh | Bauelemente-Ummantelung für ein Elektronikmodul |
EP2733742B1 (en) | 2012-11-15 | 2015-08-19 | Nxp B.V. | Amplifier circuit |
CN105594067B (zh) * | 2013-10-02 | 2018-01-19 | 日立汽车系统株式会社 | 电子控制装置 |
US9613930B2 (en) | 2013-10-25 | 2017-04-04 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
FR3033272B1 (fr) * | 2015-03-04 | 2017-03-24 | Labinal Power Systems | Procede de brasage pour assembler deux elements via un compose intermetallique |
EP3358615B1 (en) * | 2015-09-28 | 2021-12-15 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board and semiconductor module using same |
JP6781021B2 (ja) * | 2016-11-29 | 2020-11-04 | モレックス エルエルシー | 電子部品 |
FR3066643B1 (fr) * | 2017-05-16 | 2020-03-13 | Stmicroelectronics (Grenoble 2) Sas | Boitier electronique pourvu d'une fente locale formant un event |
CN110895371A (zh) * | 2018-09-13 | 2020-03-20 | 三赢科技(深圳)有限公司 | 光学投射装置 |
DE102019129675A1 (de) | 2018-12-11 | 2020-06-18 | Infineon Technologies Ag | Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls |
Family Cites Families (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3537907A (en) * | 1968-04-16 | 1970-11-03 | Texas Instruments Inc | Battery unit and heat sink therefor |
US3784440A (en) * | 1969-12-31 | 1974-01-08 | Macdermid Inc | Aluminum-clad plastic substrate laminates |
US3702427A (en) * | 1971-02-22 | 1972-11-07 | Fairchild Camera Instr Co | Electromigration resistant metallization for integrated circuits, structure and process |
US4105861A (en) * | 1975-09-29 | 1978-08-08 | Semi-Alloys, Inc. | Hermetically sealed container for semiconductor and other electronic devices |
US4042952A (en) * | 1976-06-09 | 1977-08-16 | Motorola, Inc. | R. F. power transistor device with controlled common lead inductance |
US4103318A (en) * | 1977-05-06 | 1978-07-25 | Ford Motor Company | Electronic multichip module |
US4188652A (en) | 1978-01-17 | 1980-02-12 | Smolko Gennady G | Electronic device |
JPS5662351A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Semiconductor device for memory |
DE3035749A1 (de) * | 1980-09-22 | 1982-05-06 | Siemens AG, 1000 Berlin und 8000 München | Waermeableitende leiterplatten |
FR2501414A1 (fr) | 1981-03-06 | 1982-09-10 | Thomson Csf | Microboitier d'encapsulation de pastilles de semi-conducteur, testable apres soudure sur un substrat |
JPS5815241A (ja) | 1981-07-20 | 1983-01-28 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
US4461924A (en) * | 1982-01-21 | 1984-07-24 | Olin Corporation | Semiconductor casing |
US4492730A (en) * | 1982-03-26 | 1985-01-08 | Showa Denko Kabushiki Kaisha | Substrate of printed circuit |
US5014159A (en) * | 1982-04-19 | 1991-05-07 | Olin Corporation | Semiconductor package |
JPS58190046A (ja) * | 1982-04-30 | 1983-11-05 | Fujitsu Ltd | 半導体装置 |
US4633035A (en) | 1982-07-12 | 1986-12-30 | Rogers Corporation | Microwave circuit boards |
GB8304890D0 (en) * | 1983-02-22 | 1983-03-23 | Smiths Industries Plc | Chip-carrier substrates |
US4506108A (en) * | 1983-04-01 | 1985-03-19 | Sperry Corporation | Copper body power hybrid package and method of manufacture |
US4649416A (en) * | 1984-01-03 | 1987-03-10 | Raytheon Company | Microwave transistor package |
US4767674A (en) * | 1984-01-27 | 1988-08-30 | Dainichi-Nippon Cables, Ltd. | Metal cored board and method for manufacturing same |
JPH0810710B2 (ja) * | 1984-02-24 | 1996-01-31 | 株式会社東芝 | 良熱伝導性基板の製造方法 |
US4574879A (en) * | 1984-02-29 | 1986-03-11 | The Bergquist Company | Mounting pad for solid-state devices |
US4862323A (en) * | 1984-04-12 | 1989-08-29 | Olin Corporation | Chip carrier |
US4695515A (en) * | 1984-07-30 | 1987-09-22 | Dainichi-Nippon Cables, Ltd. | Metal cored board and method for manufacturing same |
EP0183016B1 (en) * | 1984-10-03 | 1989-09-20 | Sumitomo Electric Industries Limited | Material for a semiconductor device and process for its manufacture |
WO1986002881A1 (en) * | 1984-11-09 | 1986-05-22 | Konishiroku Photo Industry Co., Ltd. | Conductive laminate |
US4619741A (en) * | 1985-04-11 | 1986-10-28 | Olin Hunt Specialty Products Inc. | Process for preparing a non-conductive substrate for electroplating |
US4953001A (en) * | 1985-09-27 | 1990-08-28 | Raytheon Company | Semiconductor device package and packaging method |
JPS62196839A (ja) * | 1986-02-24 | 1987-08-31 | Toshiba Corp | ハイブリツド型半導体装置 |
US4842959A (en) | 1986-10-17 | 1989-06-27 | The Furukawa Electric Co., Ltd. | Aluminum enamel board |
JPS63114152A (ja) * | 1986-10-30 | 1988-05-19 | Nec Corp | 混成集積回路 |
US4882212A (en) * | 1986-10-30 | 1989-11-21 | Olin Corporation | Electronic packaging of components incorporating a ceramic-glass-metal composite |
US4812896A (en) * | 1986-11-13 | 1989-03-14 | Olin Corporation | Metal electronic package sealed with thermoplastic having a grafted metal deactivator and antioxidant |
US4961106A (en) * | 1987-03-27 | 1990-10-02 | Olin Corporation | Metal packages having improved thermal dissipation |
JPS63244654A (ja) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | 樹脂封止型集積回路装置 |
US4839716A (en) * | 1987-06-01 | 1989-06-13 | Olin Corporation | Semiconductor packaging |
US4796083A (en) * | 1987-07-02 | 1989-01-03 | Olin Corporation | Semiconductor casing |
US4827376A (en) | 1987-10-05 | 1989-05-02 | Olin Corporation | Heat dissipating interconnect tape for use in tape automated bonding |
US4888449A (en) * | 1988-01-04 | 1989-12-19 | Olin Corporation | Semiconductor package |
US4924590A (en) * | 1988-01-08 | 1990-05-15 | Siemens Aktiengesellschaft | Method for making metal core printed circuit board |
US5013871A (en) * | 1988-02-10 | 1991-05-07 | Olin Corporation | Kit for the assembly of a metal electronic package |
US4963697A (en) * | 1988-02-12 | 1990-10-16 | Texas Instruments Incorporated | Advanced polymers on metal printed wiring board |
US4967260A (en) | 1988-05-04 | 1990-10-30 | International Electronic Research Corp. | Hermetic microminiature packages |
US4899256A (en) * | 1988-06-01 | 1990-02-06 | Chrysler Motors Corporation | Power module |
US4939316A (en) * | 1988-10-05 | 1990-07-03 | Olin Corporation | Aluminum alloy semiconductor packages |
US5055967A (en) * | 1988-10-26 | 1991-10-08 | Texas Instruments Incorporated | Substrate for an electrical circuit system and a circuit system using that substrate |
JP2651608B2 (ja) * | 1988-10-28 | 1997-09-10 | イビデン株式会社 | 電子部品搭載用基板 |
JP2652222B2 (ja) * | 1988-10-28 | 1997-09-10 | イビデン株式会社 | 電子部品搭載用基板 |
US4943468A (en) * | 1988-10-31 | 1990-07-24 | Texas Instruments Incorporated | Ceramic based substrate for electronic circuit system modules |
US5256901A (en) * | 1988-12-26 | 1993-10-26 | Ngk Insulators, Ltd. | Ceramic package for memory semiconductor |
JPH02201948A (ja) * | 1989-01-30 | 1990-08-10 | Toshiba Corp | 半導体装置パッケージ |
US5068708A (en) * | 1989-10-02 | 1991-11-26 | Advanced Micro Devices, Inc. | Ground plane for plastic encapsulated integrated circuit die packages |
US5025114A (en) * | 1989-10-30 | 1991-06-18 | Olin Corporation | Multi-layer lead frames for integrated circuit packages |
US5098864A (en) * | 1989-11-29 | 1992-03-24 | Olin Corporation | Process for manufacturing a metal pin grid array package |
US4997517A (en) * | 1990-01-09 | 1991-03-05 | Olin Corporation | Multi-metal layer interconnect tape for tape automated bonding |
US5077595A (en) * | 1990-01-25 | 1991-12-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
CA2047486C (en) * | 1990-07-21 | 2002-03-05 | Shigeru Katayama | Semiconductor device and method for manufacturing the same |
US5066368A (en) * | 1990-08-17 | 1991-11-19 | Olin Corporation | Process for producing black integrally colored anodized aluminum components |
US5268533A (en) * | 1991-05-03 | 1993-12-07 | Hughes Aircraft Company | Pre-stressed laminated lid for electronic circuit package |
US5121293A (en) * | 1991-08-08 | 1992-06-09 | Sun Microsystems, Inc. | Method and apparatus for interconnecting devices using tab in board technology |
US5311402A (en) | 1992-02-14 | 1994-05-10 | Nec Corporation | Semiconductor device package having locating mechanism for properly positioning semiconductor device within package |
JP2855940B2 (ja) * | 1992-02-27 | 1999-02-10 | 日本電気株式会社 | 半導体装置 |
-
1993
- 1993-07-15 TW TW082105636A patent/TW238419B/zh active
- 1993-08-02 WO PCT/US1993/007162 patent/WO1994005038A1/en not_active Application Discontinuation
- 1993-08-02 CA CA002142866A patent/CA2142866A1/en not_active Abandoned
- 1993-08-02 EP EP93918511A patent/EP0656150A4/en not_active Withdrawn
- 1993-08-02 JP JP6506297A patent/JPH08500469A/ja active Pending
- 1993-08-02 AU AU47938/93A patent/AU4793893A/en not_active Abandoned
- 1993-08-02 KR KR1019950700681A patent/KR950703207A/ko not_active Application Discontinuation
- 1993-08-20 MX MX9305074A patent/MX9305074A/es unknown
-
1994
- 1994-12-12 US US08/353,741 patent/US5504372A/en not_active Expired - Fee Related
-
1995
- 1995-05-05 US US08/435,237 patent/US6300673B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5504372A (en) | 1996-04-02 |
JPH08500469A (ja) | 1996-01-16 |
EP0656150A4 (en) | 1995-11-29 |
WO1994005038A1 (en) | 1994-03-03 |
US6300673B1 (en) | 2001-10-09 |
AU4793893A (en) | 1994-03-15 |
CA2142866A1 (en) | 1994-03-03 |
TW238419B (ko) | 1995-01-11 |
EP0656150A1 (en) | 1995-06-07 |
MX9305074A (es) | 1994-04-29 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |