KR950034768A - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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Publication number
KR950034768A
KR950034768A KR1019950003818A KR19950003818A KR950034768A KR 950034768 A KR950034768 A KR 950034768A KR 1019950003818 A KR1019950003818 A KR 1019950003818A KR 19950003818 A KR19950003818 A KR 19950003818A KR 950034768 A KR950034768 A KR 950034768A
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KR
South Korea
Prior art keywords
pads
mos transistors
integrated circuit
semiconductor integrated
circuit device
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Application number
KR1019950003818A
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English (en)
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KR100310116B1 (ko
Inventor
가쓰오 사또
Original Assignee
사또 겐이찌로
롬 가부시끼가이샤
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Application filed by 사또 겐이찌로, 롬 가부시끼가이샤 filed Critical 사또 겐이찌로
Publication of KR950034768A publication Critical patent/KR950034768A/ko
Application granted granted Critical
Publication of KR100310116B1 publication Critical patent/KR100310116B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야
본 발명은 반도체 메모리등의 반도체 집적 회로 장치에 관한 것이다.
2. 발명이 해결하려고 하는 과제
입출력 회로의 패드와 트랜지스터의 배치 구조를 연구함에 따라 칩 전체를 소형화한 반도체 집적회로 장치를 실현한다.
3. 발명의 해결방법의 요지
장면 Y와 단면 X를 갖는 반도체 칩(1)의 단면 X를 다른 단부 영역에 패드 PAD와 그 패드에 접속되는 P채널 MOS 트랜지스터와 N 채널 MOS 트랜지스터로 이루어지는 조를 복수로 배치하여 되는 반도체 집적회로 장치에 있어서, 복수의 패트 PAD1, PAD2, PAD3을 상기 단면 X를 따라 배열함과 동시에, 그들의 패드와 조를 이루는 MOS 트랜지스터 P1,N1,P2,N2,P3,N3을 패드보다도 칩 내측의 영역에 설치한 것을 특징으로 한다.
4. 발명의 중요한 용도
반도체 집적회로장치의 단변 방향 사이즈를 작게할 수 있고 그것에 따라 전체의 사이즈를 소형화 할 수 있다.

Description

반도체 집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 실시한 반도체 메모리의 요부의 레이아우트 패턴을 나타내는 도면, 제2도는 본 발명의 다른 실시예에 대하여 요부의 레이아우트패턴을 나타내는 도면, 제3도는 본 발명에 의하여 칩사이즈가 작아지는 효과를 설명하기 위한 도면.

Claims (3)

  1. 장변 Y와 단변 X를 갖는 반도체 칩(1)의 단변 X를 따른 단부영역에 패드 PAD와 그 패드에 접속되는 P채널 MOS 트랜지스터와 N 채널 MOS 트랜지스터로 이루어지는 조를 복수로 배치하여 되는 반도체 집적회로장치에 있어서, 복수의 패트 PAD1,PAD2,PAD3을 상기 단면 X를 따라 배열함과 동시에, 그들의 패드와 조를 이루는 MOS 트랜지스터 P1,N1,P2,N2,P3,N3을 패드보다도 칩 내측의 영역에 설치한 것을 특징으로 하는 반도체 집적회로장치.
  2. 장벼녀 Y와 단변 X을 갖는 반도체 칩(1)의 단변 X를 따른 단부영역에 패드 PAD와 그 패드에 접속되는 P 채널 MOS 트랜지스터와 N 채널 MOS 트랜지스터로 이루어지는 조를 복수로 배치하여 되는 반도체 집적회로장치에 있어서, 복수의 패드 PAD1,PAD2,PAD3을 상기 단면 X를 따라 배열함과 동시에, 그들의 패드와 조를 이루는 MOS 트랜지스터 P1,N1,P2,N2,P3,N3의 한쪽을 상기 패드보다도 칩 내측의 영역에 배열하고, 다른쪽의 MOS 트랜지스터를 상기 패드보다도 칩 외측의 영역에 배열한 것을 특징으로 하는 반도체 집적회로장치.
  3. 장변 Y와 단변 X를 갖는 반도체 칩(1)의 단변 X를 따른 단부영역에 패드 PAD와 그 패드에 접속되는 P채널 MOS트랜지스터와 N 채널 MOS트랜지스터로 이루어지는 조를 복수로 배치하여 되는 반도체 집적회로장치에 있어서, 가상의 장방형의 하나의 대각위에 제1, 제2패드 PAD1,PAD2 설치되고, 다른 대각위에 상기 패드와 조를 이루는 두개의 N채널 MOS 트랜지스터 N1,N2와 두개의 P채널 MOS 트랜지스터 P1,P2 쌍이 각각 설치되어 있는 것을 특징으로 하는, 반도체 집적회로 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950003818A 1994-03-29 1995-02-27 반도체집적회로장치 KR100310116B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-58425 1994-03-29
JP05842594A JP3181000B2 (ja) 1994-03-29 1994-03-29 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR950034768A true KR950034768A (ko) 1995-12-28
KR100310116B1 KR100310116B1 (ko) 2001-12-17

Family

ID=13084036

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950003818A KR100310116B1 (ko) 1994-03-29 1995-02-27 반도체집적회로장치

Country Status (4)

Country Link
US (1) US5543651A (ko)
JP (1) JP3181000B2 (ko)
KR (1) KR100310116B1 (ko)
TW (1) TW370721B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993012540A1 (en) * 1991-12-10 1993-06-24 Vlsi Technology, Inc. Integrated circuit with variable pad pitch
JPH09107048A (ja) * 1995-03-30 1997-04-22 Mitsubishi Electric Corp 半導体パッケージ
JP4313544B2 (ja) * 2002-05-15 2009-08-12 富士通マイクロエレクトロニクス株式会社 半導体集積回路
US6858945B2 (en) * 2002-08-21 2005-02-22 Broadcom Corporation Multi-concentric pad arrangements for integrated circuit pads
DE10331570B4 (de) * 2003-07-11 2005-09-22 Infineon Technologies Ag Halbleiterchip
JP5082527B2 (ja) * 2005-11-25 2012-11-28 セイコーエプソン株式会社 集積回路装置及び電子機器
JP5082309B2 (ja) * 2005-11-25 2012-11-28 セイコーエプソン株式会社 集積回路装置及び電子機器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162893A (en) * 1988-05-23 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device with an enlarged internal logic circuit area
JPH0529457A (ja) * 1991-07-24 1993-02-05 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
TW370721B (en) 1999-09-21
JPH07273209A (ja) 1995-10-20
US5543651A (en) 1996-08-06
KR100310116B1 (ko) 2001-12-17
JP3181000B2 (ja) 2001-07-03

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