KR950034156A - 온도 검출 회로 - Google Patents

온도 검출 회로 Download PDF

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Publication number
KR950034156A
KR950034156A KR1019950007004A KR19950007004A KR950034156A KR 950034156 A KR950034156 A KR 950034156A KR 1019950007004 A KR1019950007004 A KR 1019950007004A KR 19950007004 A KR19950007004 A KR 19950007004A KR 950034156 A KR950034156 A KR 950034156A
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KR
South Korea
Prior art keywords
transistor
emitter
transistors
collector
base
Prior art date
Application number
KR1019950007004A
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English (en)
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KR100190152B1 (ko
Inventor
신지 구리하라
Original Assignee
다까노 야스아끼
상요덴기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 다까노 야스아끼, 상요덴기 가부시끼가이샤 filed Critical 다까노 야스아끼
Publication of KR950034156A publication Critical patent/KR950034156A/ko
Application granted granted Critical
Publication of KR100190152B1 publication Critical patent/KR100190152B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G01K7/24—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor in a specially-adapted circuit, e.g. bridge circuit
    • G01K7/25—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor in a specially-adapted circuit, e.g. bridge circuit for modifying the output characteristic, e.g. linearising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10595—Control of operating function

Abstract

전압 전압의 변화에 영향을 받지 않고, 온도에 따른 출력 신호를 발생한다.
온도 변화에 따른 양단 전압이 발생하는 다이오드(7)과, 다이오드(7)에 애노드에 접속된 제1저항(8)과, 제2저항(9)와, 제1 및 제2저항(8 및 9)에 정전압을 인가하기 위한 제1 및 제2트랜지스터(10 및 11)과, 제1 및 제2저항(8 및 9)에 흐르는 전류가 공급되는 제3 및 제4트랜지스터(12 및 13)과, 베이스에 제3 및 제4트랜지스터(12 및 13)의 에미터 전류가 인가되는 제5 및 제6트랜지스터(14 및 15)와, 베이스에 제5 및 제6트랜지스터(14 및 15)의 에미터 전압이 인가되는 제7 및 제8트랜지스터(16 및 17)로 이루어지고, 출력 단자(20)으로부터의 출력 전류는 온도에 따라 변화한다.

Description

온도 검출 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예를 도시하는 회로도.

Claims (3)

  1. 캐소드가 접지된 다이오드, 상기 다이오드의 애노드에 한단이 접속된 제1저항, 한단이 접지된 제2저항, 에미터가 각각 상기 제1 및 제2저항의 다른 단에 접속되어 베이스에 바이어스 전압이 인가되는 제1 및 제2트랜지스터, 및 상기 제1 및 제2트랜지스터의 콜렉터 전류를 입력 신호로 하고, 상기 입력 신호에 따라 출력 신호를 발생하는 전류 연산 회로로 이루어지는 것을 특징으로 하는 온도 검출 회로.
  2. 제1항에 있어서, 상기 전류 연산 회로는 콜렉터 및 베이스가 전원에 접속됨과 동시에, 에미터가 상기 제1 및 제2트랜지스터의 콜렉터에 각각 접속된 제3 및 제4트랜지스터, 베이스가 상기 제1트랜지스터의 콜렉터에 접속된 제5트랜지스터, 콜렉터가 상기 제5트랜지스터의 콜렉터에 접속됨과 동시에, 베이스가 상기 제2트랜지스터의 콜렉터에 접속되는 제6트랜지스터, 상기 제5트랜지스터의 에미터에 접속되는 제1정전류원, 베이스가 상기 제5트랜지스터의 에미터에 접속됨과 동시에, 콜렉터가 상기 제6트랜지스터의 에미터에 접속되는 제7트랜지스터, 베이스가 상기 제6트랜지스터의 에미터에 접속되고, 에미터가 상기 제7트랜지스터의 에미터에 접속됨과 동시에, 콜렉터에 출력 신호를 발생하는 제8트랜지스터, 및 상기 제7 및 제8트랜지스터의 공통 에미터에 접속되는 제2정전류원으로 이루어지는 것을 특징으로 하는 온도 검출 회로.
  3. 제1항 또는 제2항에 있어서, MD시스템에 이용되는 것을 특징으로 하는 온도 검출 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950007004A 1994-03-31 1995-03-30 온도 검출 회로 KR100190152B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6063386A JP2951198B2 (ja) 1994-03-31 1994-03-31 温度検出回路
JP94-063386 1994-03-31
JP94-63386 1994-03-31

Publications (2)

Publication Number Publication Date
KR950034156A true KR950034156A (ko) 1995-12-26
KR100190152B1 KR100190152B1 (ko) 1999-06-01

Family

ID=13227817

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950007004A KR100190152B1 (ko) 1994-03-31 1995-03-30 온도 검출 회로

Country Status (8)

Country Link
US (1) US5660474A (ko)
EP (1) EP0675346B1 (ko)
JP (1) JP2951198B2 (ko)
KR (1) KR100190152B1 (ko)
CN (1) CN1088187C (ko)
DE (1) DE69521356T2 (ko)
DK (1) DK0675346T3 (ko)
TW (1) TW353165B (ko)

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FR2834343B1 (fr) * 2001-12-28 2004-04-09 St Microelectronics Sa Detecteur thermique
US6736540B1 (en) 2003-02-26 2004-05-18 National Semiconductor Corporation Method for synchronized delta-VBE measurement for calculating die temperature
US7828479B1 (en) * 2003-04-08 2010-11-09 National Semiconductor Corporation Three-terminal dual-diode system for fully differential remote temperature sensors
US6957910B1 (en) 2004-01-05 2005-10-25 National Semiconductor Corporation Synchronized delta-VBE measurement system
JP5226248B2 (ja) * 2006-08-02 2013-07-03 ルネサスエレクトロニクス株式会社 温度検出回路及び半導体装置
JP4863818B2 (ja) * 2006-08-29 2012-01-25 セイコーインスツル株式会社 温度センサ回路
CN101586987B (zh) * 2008-05-23 2011-04-20 震一科技股份有限公司 适用于低电压运作的温度感应电路
CN101620012B (zh) * 2008-07-02 2011-04-06 南亚科技股份有限公司 温度检测器及其使用方法
CN101655395B (zh) * 2008-08-19 2011-08-03 纮康科技股份有限公司 温度测量系统及其测量方法
CN102175338B (zh) * 2011-01-21 2012-07-25 西安电子科技大学 用于无源超高频射频识别的微功耗温度检测电路
JP6542103B2 (ja) * 2015-11-09 2019-07-10 エイブリック株式会社 過熱検出回路、過熱保護回路、及び半導体装置

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US3092998A (en) * 1960-08-08 1963-06-11 Rca Corp Thermometers
US4047435A (en) * 1976-05-20 1977-09-13 Rockwell International Corporation Temperature measuring apparatus
US4123698A (en) * 1976-07-06 1978-10-31 Analog Devices, Incorporated Integrated circuit two terminal temperature transducer
US4184126A (en) * 1978-09-27 1980-01-15 Eaton Corporation Temperature sensitive astable multivibrator
JPS58127134A (ja) * 1982-01-26 1983-07-28 Canon Inc 温度検出回路
JPS59140647A (ja) * 1983-01-31 1984-08-13 Canon Inc 光学的情報記録再生装置
JPS61118630A (ja) * 1984-11-15 1986-06-05 Mitsubishi Electric Corp Ｉｃチツプ温度検出装置
US4931665A (en) * 1988-04-13 1990-06-05 National Semiconductor Corporation Master slave voltage reference circuit
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US5488296A (en) * 1995-01-25 1996-01-30 Honeywell Inc. Temperature compensated magnetically sensitive circuit

Also Published As

Publication number Publication date
TW353165B (en) 1999-02-21
CN1112675A (zh) 1995-11-29
DE69521356T2 (de) 2001-10-11
US5660474A (en) 1997-08-26
EP0675346B1 (en) 2001-06-20
KR100190152B1 (ko) 1999-06-01
DE69521356D1 (de) 2001-07-26
EP0675346A1 (en) 1995-10-04
CN1088187C (zh) 2002-07-24
JP2951198B2 (ja) 1999-09-20
JPH07270250A (ja) 1995-10-20
DK0675346T3 (da) 2001-09-24

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