KR950033517A - 자기저항 센서 및 자기 저항 시스템 - Google Patents

자기저항 센서 및 자기 저항 시스템 Download PDF

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KR950033517A
KR950033517A KR1019950010802A KR19950010802A KR950033517A KR 950033517 A KR950033517 A KR 950033517A KR 1019950010802 A KR1019950010802 A KR 1019950010802A KR 19950010802 A KR19950010802 A KR 19950010802A KR 950033517 A KR950033517 A KR 950033517A
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layer
gold
metal
tantalum
magnetoresistive
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KR1019950010802A
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KR0159998B1 (ko
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첸 마오-민
캐드린 커트버레트 매리
토우픽 크로운비 모하매드
케이. 레티머 재클린
피나르바시 무스타파
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윌리암 티. 엘리스
인터내셔널 비지네스 머신즈 코포레이션
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

본 발명은 자기저항 센서 및 자기 저장 매체에 관한 것으로, 상기 자기저항 센서는 기판상에 형성된 제1 및 제2에지를 갖는 자기 저항 물질을 포함하고, 제1다층 전도 도선 구조가 상기 제1에지에 전기적으로 연결되고, 제2다층 전도 도선 구조가 상기 제2에지에 전기적으로 연결되며, 상기 제1및 제2전도 도선 구조는 고 전도성 금속으로 된 적어도 두개의 박막 층 사이에 삽입된 적어도 하나의 저항성 금속층이 번갈아 나타내는 복수의 박막 물질 층으로 구성된다.

Description

자기저항 센서 및 자기 저항 시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 바람직한 구체적 실시예에 따른 다층 전도 도선을 갖는 자기저항 센서 헤드를 포함하는 자기 디스크 저장 시스템을 도시한 도면.

Claims (20)

  1. 제1에지(edge) 및 제2에지를 갖는 기판(substrate)상에 형성된 자기저항 물질(magnetoresistive mateial)과; 상기 제1에지에 전기적으로 연결된 제1다층 전도 도선 구조(a first multilayered conductive lead structure)와; 상기 제2에지에 전기적으로 연결된 제2다층 전도 도선 구조(a second multilayered conductive lead structure)를 포함하고, 상기 제1 및 제2전도 도선 구조는 다층의 박막 물질로 구성되고, 상기 층은 저항성 금속(refractory metal)으로 된 박막과 고전도성 금속(highly conductive metal)으로 된 박막 사이에서 가변하고, 상기 제1 및 제2전도 도선 구조는 상기 고전도성 금속으로 구성된 두개의 박막 층 사이에 형성된 적어도 하나의 저항성 금속 층을 갖는 자기저항 센서(magnetoresistive head assembly).
  2. 제1항에 있어서, 상기 저항성 금속은 탄탈륨, 텅스텐, 티타늄, 니오븀 미 크롬을 포함하는 그룹으로부터 선택되는 자기저항 센서.
  3. 제2항에 있어서, 상기 저항성 금속이 탄탈륨인 자기저항 센서.
  4. 제1항에 있어서, 상기 고 전도성 금속은 금, 금과 니켈의 합금 및 금과 동의 합금을 포함하는 그룹으로부터 선택되는 자기저항 센서.
  5. 제4항에 있어서, 상기 고 전도성 금속이 금인 자기저항 센서.
  6. 제4항에 있어서, 상기 고 전도성 금속은 동(Cu) 함유량이 0~50%의 범위내인 금 이원소 합금(gold binary alloys)인 자기저항 센서.
  7. 제6항에 있어서, 상기 고 전도성 금속은 동 함유량이 45%인 금 이원소 합금인 자기저항 센서.
  8. 제4항에 있어서, 상기 고 전도성 금속은 니켈(Ni) 함유량이 0~15%의 범위내인 금 이원소 합금인 자기저항 센서.
  9. 제8항에 있어서, 상기 고 전도성 금속인 니켈 함유량이 10%인 금 이원소 합금인 자기저항 센서.
  10. 제1항에 있어서, 상기 저항성 금속이 탄탈륨이고, 상기 고 전도성 금속은 금이며, 더욱이 상기 금 층의 두께에 대한 탄탈륨 층의 두께 비가 33%보다 작은 자기저항 센서.
  11. 제10항에 있어서, 상기 금 층의 두께에 대한 탄탈륨 층의 두께 비가 10% 보다 큰 자기저항 센서.
  12. 제11항에 있어서, 상기 탄탈륨 층의 두께가 35Å이고, 상기 금 층의 두께는 200Å인 자기저항 센서.
  13. 제1항에 있어서, 상기 자기저항 물질은, 기판상에 형성되는 차폐층(shield layer)과; 상기 차폐층 위에 형성되는 절연층(insulation layer)과; 상기 절연층 위에 형성되는 연질 막 층(soft film layer)과; 상기 연질 막 층 위에 형성되는 탄탈륨 스페이서 층(tantalum spacer layer)과; 상기 스페이서층 위에 형성되는 니켈-철 층(nickel-iron layer)과; 상기 니켈-철 층 위에 형성되는 탄탈륨 덮개 층(cap layer)을 포함하는 자기저항 센서.
  14. 제1항에 있어서, 상기 제1및 제2전도 도선 구조는 상기 기판 위에 형성되는 크롬 층(chromium layer)과; 상기 크롬 층 위에 형성되는 고형-바이러스 물질(hard-bias material)을 더 포함하고, 상기 전도 도선 구조는 상기 고형-바이어스 물질 위에 형성되는 자기저항 센서.
  15. 제14항에 있어서, 상기 고형-바이어스 물질이 코발트-백금-크롬(cobalt-platinum-chromium)인 자기저항 센서.
  16. 데이타 기록용 복수의 트랙을 갖는 자기 저장 매체(magnetic storage medium)와; 상기 자기 저장 매체와 상대적인 운동을 하는 동안 상기 자기 저장 매체에 대해 간격을 두고 가까이 위치되어 유지되는 자기 트랜스듀서(magnetic tranducer)를 포함하고, 상기 자기 트랜스듀서는, 제1에지와 제2에지를 갖고 기판상에 형성되는 자기저항 물질과; 상기 제1에지에 전기적으로 연결되는 제1다층 전도 도선 구조와; 상기 제2에지에 전기적으로 연결되는 제2다층 전도 도선 구조와; 상기 저장 매체상에 선택된 트랙으로 상기 자기 트랜스듀서를 이동시키기 위하여 상기 자기 트랜스듀서에 연결된 액츄에이터 수단(actuator means)과; 상기 자기저항 물질 층에 의해 구분된(intercepted) 상기 자기 저항 매체내에 기록된 데이타 비트의 자계 표면에 대응하는 자기 저항 물질내의 저항 변화를 검출하기 위해 상기 제1및 제2다층 전도 도선 구조 사이에 결합된 검출 수단을 포함하고, 상기 제1및 제2전도 도선 구조는 다층의 박막 물질로 구성되고, 상기 층들은 저항성 금속으로 된 박막과 고 전도성 금속으로 된 박막 사이에서 가변하며, 상기 제1 및 제2전도 도선 구조는 상기 고 전도성 금속으로 구성된 두개의 박막 층간에 삽입되는 적어도 하나의 저항성 금속 층을 더 포함하는 자기 저장 시스템(magnetic storage system).
  17. 제16항에 있어서, 상기 저항성 금속은 탄탈륨, 텅스텐, 티타늄, 니오븀 및 크롬을 포함하는 그룹으로부터 선택되는 자기 저장 시스템.
  18. 제16항에 있어서, 상기 고 전도성 금속은 금, 금과 니켈의 합금 및 금과 동의 합금을 포함하는 그룹으로부터 선택되는 자기 저장 시스템.
  19. 제16항에 있어서, 상기 저항성 금속이 탄탈륨이고, 상기 고 전도성 금속은 금이며, 상기 금으로 된 층의 두께에 대한 상기 탄탈륨 층 두께의 비는 10%와 33%사이의 범위인 자기 저장 시스템.
  20. 제19항에 있어서, 상기 탄탈륨 층의 두께가 35Å이고, 상기 금 층의 두께는 200Å인 자기 저장 시스템.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950010802A 1994-05-04 1995-05-03 자기저항 센서 및 자기 저장 시스템 KR0159998B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/237,744 1994-05-04
US08/237,744 US5491600A (en) 1994-05-04 1994-05-04 Multi-layer conductor leads in a magnetoresistive head

Publications (2)

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KR950033517A true KR950033517A (ko) 1995-12-26
KR0159998B1 KR0159998B1 (ko) 1999-01-15

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Country Link
US (1) US5491600A (ko)
EP (1) EP0690439A1 (ko)
JP (1) JP3037875B2 (ko)
KR (1) KR0159998B1 (ko)
CN (1) CN1068690C (ko)
BR (1) BR9501865A (ko)
TW (1) TW267230B (ko)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845027A (ja) * 1994-07-29 1996-02-16 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
US5880910A (en) * 1994-12-29 1999-03-09 Yamaha Corporation Magneto-resistive reading head with two slanted longitudinal bias films and two slanted leads
US5796560A (en) * 1995-03-13 1998-08-18 Kabushiki Kaisha Toshiba Magnetoresistive head
US5646051A (en) * 1995-05-05 1997-07-08 Nec Research Institute, Inc. Process for forming a magnetoresistive sensor for a reading head
US5583727A (en) * 1995-05-15 1996-12-10 International Business Machines Corporation Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor
JP3448838B2 (ja) * 1995-06-30 2003-09-22 富士通株式会社 磁気抵抗効果型ヘッドの製造方法
US5790351A (en) * 1995-07-07 1998-08-04 Nec Corporation Magnetoresistive head with conductive underlayer
JPH09128717A (ja) * 1995-10-30 1997-05-16 Fujitsu Ltd 薄膜磁気ヘッドとその製造方法及び磁気記録装置
US5622874A (en) * 1995-12-14 1997-04-22 Nec Research Institute, Inc. Process for forming a magnetoresistive sensor for a read/write head
US6545847B2 (en) 1996-02-14 2003-04-08 Hitachi, Ltd. Magnetoresistive effect head
US5936810A (en) 1996-02-14 1999-08-10 Hitachi, Ltd. Magnetoresistive effect head
US5739987A (en) * 1996-06-04 1998-04-14 Read-Rite Corporation Magnetoresistive read transducers with multiple longitudinal stabilization layers
US5742459A (en) * 1996-06-20 1998-04-21 Read-Rite Corporation Magnetic head having encapsulated magnetoresistive transducer and multilayered lead structure
US7116527B1 (en) * 1996-09-30 2006-10-03 Kabushiki Kaisha Toshiba Magnetoresistance effect device having hard magnetic film structural body
US5715120A (en) * 1996-10-09 1998-02-03 International Business Machines Corporation Magnetoresistance sensor with enhanced magnetoresistive effect
US5680282A (en) * 1996-10-24 1997-10-21 International Business Machine Corporation Getter layer lead structure for eliminating resistance increase phonomena and embrittlement and method for making the same
JP3455037B2 (ja) * 1996-11-22 2003-10-06 アルプス電気株式会社 スピンバルブ型薄膜素子、その製造方法、及びこのスピンバルブ型薄膜素子を用いた薄膜磁気ヘッド
KR20010020312A (ko) * 1997-04-28 2001-03-15 시게이트 테크놀로지 엘엘씨 이중층의 자기 변환 안정화된 자기 저항성 헤드
JP2970590B2 (ja) * 1997-05-14 1999-11-02 日本電気株式会社 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
US6449135B1 (en) 1997-09-22 2002-09-10 Seagate Technology Llc Overlaid MR structure with magnetostatic stabilized soft adjacent layer
US5883764A (en) * 1997-10-03 1999-03-16 International Business Machines Corporation Magnetoresistive sensor having multi-layered refractory metal conductor leads
US6278595B1 (en) 1998-01-27 2001-08-21 Seagate Technology Llc Magnetoresistive sensor having a hard-biasing material and a cubic-titanium-tungsten underlayer
US6185078B1 (en) * 1998-08-21 2001-02-06 International Business Machines Corporation Spin valve read head with antiferromagnetic oxide film as longitudinal bias layer and portion of first read gap
US6209193B1 (en) * 1998-08-24 2001-04-03 International Business Machines Corporation Method of making read sensor with self-aligned low resistance leads
JP3473939B2 (ja) 1998-10-13 2003-12-08 Ｔｄｋ株式会社 薄膜磁気ヘッドおよびその製造方法
US6221218B1 (en) 1998-11-23 2001-04-24 Read-Rite Corporation Method of forming an inductive write head for magnetic data storage media
US6190764B1 (en) 1998-11-23 2001-02-20 Read-Rite Corporation Inductive write head for magnetic data storage media
US6434814B1 (en) 1998-12-16 2002-08-20 International Business Machines Corporation Method of manufacturing a magnetic head including a read head with read track width defining layer that planarizes the write gap layer of a write head
US6462920B1 (en) 1998-12-23 2002-10-08 Read-Rite Corporation Method and system for reducing MR head instability
US6228276B1 (en) * 1999-02-05 2001-05-08 Headway Technologies, Inc. Method of manufacturing magnetoresistive (MR) sensor element with sunken lead structure
JP2000242911A (ja) * 1999-02-22 2000-09-08 Tdk Corp 複合型薄膜磁気ヘッドの製造方法
US6433970B1 (en) * 1999-06-07 2002-08-13 Read-Rite Corporation Structure and method for redeposition free thin film CPP read sensor fabrication
US6287476B1 (en) 1999-06-14 2001-09-11 Headway Technologies, Inc. Electrochemical method to improve MR reader edge definition and device reliability
US6274025B1 (en) 1999-06-14 2001-08-14 Headway Technologies, Inc. Chemical approach to develop lift-off photoresist structure and passivate MR sensor
US6889555B1 (en) * 1999-07-20 2005-05-10 Fidelica Microsystems, Inc. Magnetoresistive semiconductor pressure sensors and fingerprint identification/verification sensors using same
US6694822B1 (en) * 1999-07-20 2004-02-24 Fidelica Microsystems, Inc. Use of multi-layer thin films as stress sensor
US6226158B1 (en) 1999-07-30 2001-05-01 International Business Machines Corporation High operating temperature gold leads for a read sensor
US6421212B1 (en) * 1999-09-21 2002-07-16 Read-Rite Corporation Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication
JP2001196661A (ja) * 1999-10-27 2001-07-19 Sony Corp 磁化制御方法、情報記憶方法、磁気機能素子および情報記憶素子
US6706421B1 (en) 2000-01-18 2004-03-16 Headway Technologies, Inc. Low resistance conductor leads for GMR heads
JP4136261B2 (ja) * 2000-03-29 2008-08-20 富士通株式会社 磁気抵抗効果素子を製造する方法
US6428714B1 (en) 2000-06-05 2002-08-06 Headway Technologies, Inc. Protective layer for continuous GMR design
US6416677B1 (en) 2000-06-05 2002-07-09 Headway Technologies, Inc. Narrow track stitched GMR head
US6447689B1 (en) 2000-06-05 2002-09-10 Headway Technologies, Inc. Protective layer for continuous GMR design using reverse photo mask
JP2002074614A (ja) * 2000-08-25 2002-03-15 Alps Electric Co Ltd 磁気ヘッド
JP2002076472A (ja) * 2000-08-31 2002-03-15 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド
US6632474B1 (en) 2000-10-13 2003-10-14 Headway Technologies, Inc. Robust hard bias/conductor lead structures for future GMR heads
US6683761B2 (en) 2000-11-09 2004-01-27 Seagate Technology Llc Magnetoresistive sensor with laminate electrical interconnect
US6570745B1 (en) 2000-11-20 2003-05-27 International Business Machines Corporation Lead overlaid type of sensor with sensor passive regions pinned
US6813121B2 (en) 2000-11-30 2004-11-02 Hitachi Global Storage Technologies Netherlands, B.V. Magnetic transducer with multilayer conductive leads including a tantalum layer, a chromium layer and a rhodium layer
US6798622B2 (en) 2000-12-11 2004-09-28 Headway Technologies, Inc. Magnetoresistive (MR) sensor element with sunken lead structure
US7059201B2 (en) * 2000-12-20 2006-06-13 Fidelica Microsystems, Inc. Use of multi-layer thin films as stress sensors
US6634087B2 (en) 2000-12-26 2003-10-21 Headway Technologies, Inc. Spin valve head having lead overlay
JP2002319111A (ja) 2001-02-15 2002-10-31 Fujitsu Ltd 磁気抵抗効果型磁気ヘッド
US6493926B2 (en) 2001-04-16 2002-12-17 Headway Technologies, Inc. Bi-layer lift-off process for high track density GMR head
US6817086B2 (en) * 2001-05-10 2004-11-16 International Business Machines Corporation Photolithographic process for extreme resolution of track width definition of a read head
US6760199B2 (en) * 2001-07-23 2004-07-06 International Business Machines Corporation Read/write head assembly employing independent read/write shield-pairing and charge-clamped magnetoresistive sensors
JP3379704B2 (ja) * 2001-07-24 2003-02-24 ティーディーケイ株式会社 薄膜磁気ヘッド、磁気ヘッド装置及び磁気記録再生装置
JP3383293B1 (ja) * 2001-08-24 2003-03-04 ティーディーケイ株式会社 薄膜磁気ヘッドおよびその製造方法、ヘッドジンバルアセンブリならびにハードディスク装置
US6663986B2 (en) 2001-12-27 2003-12-16 Storage Technology Corporation Magneto-resistive stripe element having a thin film conductor covered by a conductive capping layer
US6862798B2 (en) * 2002-01-18 2005-03-08 Hitachi Global Storage Technologies Netherlands B.V. Method of making a narrow pole tip by ion beam deposition
JP4230702B2 (ja) * 2002-02-04 2009-02-25 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子の製造方法
JP2003242614A (ja) 2002-02-18 2003-08-29 Alps Electric Co Ltd 薄膜電極層及び薄膜磁気ヘッド並びに該薄膜磁気ヘッドの電極形成方法
US6861177B2 (en) * 2002-02-21 2005-03-01 Hitachi Global Storage Technologies Netherlands B.V. Method of forming a read sensor using a lift-off mask having a hardmask layer and a release layer
US6741432B2 (en) * 2002-03-21 2004-05-25 International Business Machines Corporation Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structure
US20030231437A1 (en) * 2002-06-17 2003-12-18 Childress Jeffrey R. Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
JP4018464B2 (ja) * 2002-06-28 2007-12-05 株式会社東芝 磁界センサーおよび磁気ディスク装置
US7075761B2 (en) * 2002-08-27 2006-07-11 Hitachi Global Storage Technologies Netherlands B.V. Lead-defined and shaped magnetic sensor
US6876525B2 (en) * 2002-08-27 2005-04-05 International Business Machines Corporation Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process
US7196876B2 (en) * 2002-09-06 2007-03-27 Headway Technologies, Inc. Method to make abutted junction GMR head without lead shunting
US6919280B2 (en) * 2002-10-15 2005-07-19 Hitachi Global Storage Technologies Netherlands B.V. Method of removing magnetoresistive sensor cap by reactive ion etching
US7227726B1 (en) 2002-11-12 2007-06-05 Storage Technology Corporation Method and system for providing a dual-stripe magnetoresistive element having periodic structure stabilization
US7146711B2 (en) * 2002-12-13 2006-12-12 Headway Technologies, Inc. Method to make planarized GMR head for high track density
US6927948B2 (en) * 2003-01-23 2005-08-09 Hitachi Global Storage Technologies Netherlands B.V. Differential CPP GMR sensor with free layers separated by metal gap layer
JP3895281B2 (ja) * 2003-02-18 2007-03-22 Ｔｄｋ株式会社 パターン形成方法、これを用いた磁気抵抗効果素子及び磁気ヘッドの製造方法、並びに、ヘッドサスペンションアセンブリ及び磁気ディスク装置
US6866987B2 (en) * 2003-02-20 2005-03-15 Headway Technologies, Inc. Resolution and process window improvement using lift-off
US7136264B2 (en) * 2003-04-10 2006-11-14 Hitachi Global Storage Technologies Netherlands, B.V. Use of gold leads in lead overlaid type of GMR sensor
JP3955549B2 (ja) 2003-05-12 2007-08-08 アルプス電気株式会社 薄膜磁気ヘッドの電極膜
US7330339B2 (en) * 2003-07-25 2008-02-12 Hitachi Global Storage Technologies Netherlands B.V. Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads
US7467458B2 (en) * 2004-02-17 2008-12-23 Hitachi Global Storage Technologies Netherlands B.V. Method for use in making a read head
US7327540B2 (en) * 2004-06-01 2008-02-05 Headway Technologies, Inc. Hard biased materials for recording head applications
US7194797B2 (en) * 2004-06-30 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for use in forming a read sensor for a magnetic head
US7284316B1 (en) 2004-11-17 2007-10-23 Western Digital (Fremont), Llc Method for forming a hard bias structure in a magnetoresistive sensor
US7765675B2 (en) * 2005-09-01 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same
US7400474B2 (en) * 2005-10-28 2008-07-15 International Business Machines Corporation Conductive pairing for piggyback magnetic head
US8743511B2 (en) * 2011-08-31 2014-06-03 HGST Netherlands B.V. CPP-GMR sensor with corrosion resistent spacer layer and higher signal/noise ratio
CN103107215A (zh) * 2011-11-14 2013-05-15 太聚能源股份有限公司 太阳能电池及其形成方法
CN205861754U (zh) * 2016-07-08 2017-01-04 江苏多维科技有限公司 一种无需置位和复位装置的各向异性磁电阻电流传感器
JP7028234B2 (ja) * 2019-11-27 2022-03-02 Tdk株式会社 磁気センサ

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8102148A (nl) * 1981-05-01 1982-12-01 Philips Nv Magnetisch overdrachtselement alsmede magnetisch permeabel onderdeel voor een magnetisch overdrachtselement.
JPS61267914A (ja) * 1985-05-21 1986-11-27 Nec Corp 磁気抵抗効果ヘツドの製造方法
US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
US4809109A (en) * 1988-03-25 1989-02-28 International Business Machines Corporation Magnetoresistive read transducer and method for making the improved transducer
US5005096A (en) * 1988-12-21 1991-04-02 International Business Machines Corporation Magnetoresistive read transducer having hard magnetic shunt bias
US5109310A (en) * 1989-03-07 1992-04-28 Alps Electric Co., Ltd. Disk drive device with unified actuator assembly
JPH0536032A (ja) * 1991-08-01 1993-02-12 Hitachi Ltd 磁気抵抗効果型ヘツド及びその製造方法
US5341261A (en) * 1991-08-26 1994-08-23 International Business Machines Corporation Magnetoresistive sensor having multilayer thin film structure
US5262914A (en) * 1991-10-18 1993-11-16 International Business Machines Corporation Magnetoresistive head with enhanced exchange bias field
JPH05258246A (ja) * 1992-01-21 1993-10-08 Internatl Business Mach Corp <Ibm> 磁気抵抗読取りトランスジューサ
JP2620500B2 (ja) * 1992-10-02 1997-06-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ及びその製造方法

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KR0159998B1 (ko) 1999-01-15
CN1068690C (zh) 2001-07-18
EP0690439A1 (en) 1996-01-03
CN1122499A (zh) 1996-05-15
TW267230B (ko) 1996-01-01

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