KR950031560A - 표면처리장치 및 표면처리방법 - Google Patents

표면처리장치 및 표면처리방법 Download PDF

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KR950031560A
KR950031560A KR1019950004238A KR19950004238A KR950031560A KR 950031560 A KR950031560 A KR 950031560A KR 1019950004238 A KR1019950004238 A KR 1019950004238A KR 19950004238 A KR19950004238 A KR 19950004238A KR 950031560 A KR950031560 A KR 950031560A
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surface treatment
support
treatment apparatus
support portion
workpiece
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KR1019950004238A
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KR100335845B1 (ko
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스께요시 쯔네까와
게이스께 후나쯔
겐이찌 가와스미
아끼오 이나다
마사로 가꾸
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가나이 쯔또무
가부시끼가이샤 히다찌세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

표면처리장치및 표면처리방법에 관한 것으로써, 표면처리속도를 종래보다 크게 저하시키지 않고 피처리물의 이면에 부착되는 이물의 수를 종래보다 감소시키기 위해, 지지대에 피처리물을 탑재한 상태에서 피처리물 표면에 오존가스를 공급해서 피처리물 표면을 표면처리하기 위한 표면처리장치로서, 지지대는 가열부와 지지부를 갖고, 피처리물과 상기 지지부사이에 필요한 간극이 형성되도록 상기 피처리물의 한면을 부분적으로 지지하기 위한 지지부재가 지지부 표면에 마련되고, 가열부에는 히터가 내장되어 있고, 지지부를 구성하는 부재에는 가열부를 구성하는 부재보다 방사율이 큰 재료를 사용한다.
이러한 장치와 방법에 의해, 표면처리속도를 종래보다 크게 저하시키지 않고 피처리물의 이면에 부착되는 이물의 수를 종래보다 감소시킬 수 있다.

Description

표면처리장치 및 표면처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예에 관한 표면처리장치를 도시한 도면.

Claims (16)

  1. 지지대에 피처리물을 탑재한 상태에서 상시 피처리물 표면에 오존가스를 공급해서 상기 피처리물 표면을 표면처리하기 위한 표면처리장치로써, 상기 지지대는 가열부와 지지부를 갖고, 상기 피처리물과 상기 지지부사이에 필요한 간극이 형성되도록 상기 피처리물의 한면을 부분적으로 지지하기 위한 지지부재가 상기 지지부 표면에 마련되고, 상기 가열부에는 히터가 내장되어 있고, 상기 지지부를 구성하는 부재로는 상기 가열부를 구성하는 부재보다 방사율이 큰 재료를 사용하는 것을 특징으로 하는 표면처리장치.
  2. 제1항에 있어서, 상기 표면처리는 상기 피처리물 표면에 형성된 레지스트막을 제거하는 것이던가 또는 상기 피처리물 표면에 형성된 패터닝된 알루미늄배선의 표면을 산화하는 것인 것을 특징으로 하는 표면처리장치.
  3. 제1항에 있어서, 상기 표면처리는 상기 피처리물의 표면청정화처리 또는 표면산화처리인 것을 특징으로 하는 표면처리장치.
  4. 제1항에 있어서, 상기 가열부의 한면과 상기 지지부의 한면은 면접촉한 상태에서 고정되어 있는 것을 특징으로 하는 표면처리장치.
  5. 제1항에 있어서, 상기 히터는 상기 표면처리를 실행하고 있는 동안은 발열해서 상기 가열부, 상기 지지부 및 상기 지지부와 상기 피처리물사이의 간극을 거쳐서 상기 피처리물을 가열하기 위한 것을 특징으로 하는 표면처리장치.
  6. 제1항에 있어서, 상기 지지부재는 상기 지지부와 일체적으로 형성되어 있는 것을 특징으로 하는 표면처리장치.
  7. 제1항에 있어서, 상기 지지부를 구성하는 부재로는 상기 가열부를 구성하는 부재보다 열 전도율이 작은 재료를 사용하는 것을 특징으로 하는 표면처리장치.
  8. 제1항에 있어서, 상기 지지부재는 여러개 있고, 또한 그 각각이 돌기형상을 하며, 상기 지지부재의 선단으로 상기 피처리물의 상기 한면을 지지하는 것을 특징으로 하는 표면처리장치.
  9. 제1항에 있어서, 평탄한 평면과 상기 피처리물 표면사이에 폭이 좁은 갭을 형성하도록 상기 피처리물 표면에 인접하며, 또한 상기 피처리물 표면에서 떨어져서 상기 평탄한 평면을 마련하는 수단을 갖는 것을 특징으로 하는 표면처리장치.
  10. 제1항에 있어서, 상기 피처리물 표면의 위쪽의 위치에는 자외선광원, 적외선광원 또는 히터중 적어도 1개가 마련되어 있는 것을 특징으로 하는 표면처리장치.
  11. 제1항에 있어서, 상기 간극의 치수는 0.1mm이상 0.5mm이하인 것을 특징으로 하는 표면처리장치.
  12. 제1항에 있어서, 상기 지지부에는 오목부가 형성되고, 상기 오목부내에 상기 지지부재가 마련되고, 상기 오목부에 상기 피처리물이 수용되었을 때 상기 피처리물은 상기 지지부재에 의해 지지되며, 또한 수용된 상기 피처리물의 표면과 상기 지지부재의 상기 오목부의 둘레가장자리부는 실질적으로 하나의 면으로 되도록 상기 오목부 및 상기 지지부재가 구성되어 있는 것을 특징으로 하는 표면처리장치.
  13. 제1항에 있어서, 상기 지지부재는 상기 피처리물을 진공흡착하기 위한 흡기구가 마련되어 있는 것을 특징으로 하는 표면처리장치.
  14. 제1항에 있어서, 상기 간극에도 오존가스를 공급하기 위한 수단을 갖는 것을 특징으로 하는 표면처리장치.
  15. 제1항에 있어서, 상기 지지부재와 상기 지지부는 다른 부재로 이루어지며, 상기 지지부재를 구성하는 부재는 상기 지지부를 구성하는 부재보다 방사율이 큰 재료로 이루어지는 것을 특징으로 하는 표면처리장치.
  16. 히터가 내장된 가열부와 지지부를 갖는 지지대, 상기 지지대에 탑재된 피처리물과 상기 지지부사이에 필요한 간극이 형성되도록 상기 피처리물의 한면을 부분적으로 지지하기 위한, 또한 상기 지지부 표면에 마련된 지지부재 및 상기 지지부를 구성하는 부재로 상기 가열부를 구성하는 부재보다 방사율이 큰 재료를 사용한 표면 처리장치를 준비하고, 상기 지지부에 상기 피처리물을 탑재하며, 상기 지지부에 탑재한 상기 피처리물 표면에 오존가스를 공급하는 것을 특징으로 하는 표면처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950004238A 1994-03-10 1995-03-02 표면처리장치및표면처리방법 KR100335845B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-039418 1994-03-10
JP03941894A JP3234091B2 (ja) 1994-03-10 1994-03-10 表面処理装置

Publications (2)

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KR950031560A true KR950031560A (ko) 1995-12-18
KR100335845B1 KR100335845B1 (ko) 2002-09-04

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US (1) US5478401A (ko)
JP (1) JP3234091B2 (ko)
KR (1) KR100335845B1 (ko)

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JP6698489B2 (ja) * 2016-09-26 2020-05-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
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JP3234091B2 (ja) 2001-12-04
JPH07249603A (ja) 1995-09-26

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