KR950030274A - 비정질실리콘 박막트랜지스터 제조방법 - Google Patents

비정질실리콘 박막트랜지스터 제조방법 Download PDF

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KR950030274A
KR950030274A KR1019940008131A KR19940008131A KR950030274A KR 950030274 A KR950030274 A KR 950030274A KR 1019940008131 A KR1019940008131 A KR 1019940008131A KR 19940008131 A KR19940008131 A KR 19940008131A KR 950030274 A KR950030274 A KR 950030274A
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forming
layer
amorphous silicon
gate electrode
active layer
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KR1019940008131A
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KR970006257B1 (ko
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소회섭
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이헌조
엘지전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 비정질실리콘 박막트랜지스터 제조방법에 관한 것으로, 박막트랜지스터-액정표시장치의 화질을 개선하고 박막트랜지스터의 전기적 성능을 향상시키기 위한 것이다.
본 발명은 유리기판상에 비정질실리콘층과 제1게이트절연층을 연속으로 형성하는 공정과, 상기 제1게이트절연층 및 비정질실리콘을 섬모양으로 패터닝하여 비정질실리콘으로 이루어진 활성층을 형성하는 공정, 상기 제1게이트절연층상에 제2게이트절연층과 게이트전극 형성용 도전층을 게이트전극패턴으로 패터닝하여 게이트전극을 형성하는 공정, 상기 게이트전극을 마스크로 이용하여 상기 활성층에 선택적으로 이온을 주입하는 공정 및 상기 활성층을 엑시머레이저를 이용하여 어닐링하여 이온이 주입된 영역을 다결정화하는 공정을 포함하여 이루어지는 비정질실리콘 박막트랜지스터 제조방법을 제공한다.

Description

비정질실리콘 박막트랜지스터 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일실시예에 의한 비정질실리콘 박막트랜지스터 제조방법을 도시한 공정순서도, 제3도는 본 발명의 일실시예에 의한 비정질실리콘 박막트랜지스터 제조방법을 도시한 공정순서도.

Claims (3)

  1. 유리기판상에 비정질실리콘층과 제1게이트절연층을 연속으로 형성하는 공정과, 상기 제1게이트절연층 및 비정질실리콘을 섬모양으로 패터닝하여 비정질실리콘으로 이루어진 활성층을 형성하는 공정, 상기 제1게이트절연층상에 제2게이트절연층과 게이트전극 형성용 도전층을 연속적으로 형성하는 공정, 상기 제2게이트절연층 및 게이트전극 형성용 도전층을 게이트전극패턴으로 패터닝하여 게이트전극을 형성하는 공정, 상기 게이트전극을 마스크로 이용하여 상기 활성층에 선택적으로 이온을 주입하는 공정, 및 상기 활성층을 엑시머레이저를 이용하여 어닐링하여 이온이 주입된 영역을 다결정화하는 공정을 포함하여 이루어지는 것을 특징으로 하는 비정질실리콘 박막트랜지스터 제조방법.
  2. 제1항에 있어서, 상기 엑시머레이저를 이용한 어닐링공정후에 상기 기판 전면에 층간절연막을 형성하는 공정과, 상기 층간절연막을 선택적으로 식각하여 콘택홀을 형성하는 공정, 상기 콘택홀을 통해 상기 활성층의 소정영역과 접속되는 소오스 및 드레인전극을 형성하는 공정이 더 포함되는 것을 특징으로 하는 비정질실리콘 박막트랜지스터 제조방법.
  3. 유리기판상에 게이트전극을 형성하는 공정과, 상기 게이트전극이 형성된 기판전면에 게이트절연층과 비정질실리콘층 및 후면보호막을 연속적으로 형성하는 공정, 상기 비정질실리콘층을 패터닝하여 활성층을 형성하는 공정, 상기 후면보호막을 소정패턴으로 패터닝하는 공정, 상기 후면보호막을 마스크로 하여 상기 노출된 활성층영역에 이온을 선택적으로 주입하는 공정, 상기 활성층을 엑시머레이저를 이용하여 어닐링하여 이온이 주입된 영역을 다결정화하는 공정, 상기 기판 전면에 금속을 증착하고 패터닝하여 상기 활성층의 소정영역과 접속되는 소오스 및 드레인전극을 형성하는 공정으로 이루어진 것을 특징으로 하는 비정질실리콘 박막트랜지스터 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940008131A 1994-04-18 1994-04-18 비정질 실리콘 박막트랜지스터 제조방법 KR970006257B1 (ko)

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KR1019940008131A KR970006257B1 (ko) 1994-04-18 1994-04-18 비정질 실리콘 박막트랜지스터 제조방법

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KR1019940008131A KR970006257B1 (ko) 1994-04-18 1994-04-18 비정질 실리콘 박막트랜지스터 제조방법

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KR970006257B1 KR970006257B1 (ko) 1997-04-25

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