KR950033616A - 액정표시소자 제조방법 - Google Patents

액정표시소자 제조방법 Download PDF

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Publication number
KR950033616A
KR950033616A KR1019940012099A KR19940012099A KR950033616A KR 950033616 A KR950033616 A KR 950033616A KR 1019940012099 A KR1019940012099 A KR 1019940012099A KR 19940012099 A KR19940012099 A KR 19940012099A KR 950033616 A KR950033616 A KR 950033616A
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KR
South Korea
Prior art keywords
forming
gate electrode
layer
substrate
active layer
Prior art date
Application number
KR1019940012099A
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English (en)
Inventor
오길환
Original Assignee
이헌조
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 엘지전자 주식회사 filed Critical 이헌조
Priority to KR1019940012099A priority Critical patent/KR950033616A/ko
Publication of KR950033616A publication Critical patent/KR950033616A/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)

Abstract

본 발명은 액정표시소자 제조방법에 관한 것으로, 오프셋구조를 갖는 박막트랜지스터의 오프셋 효과를 높이기 위한 것이다.
본 발명은 기판위에 활성층을 형성하는 단계와, 상기 활성층 상부에 게이트절연막을 형성하는 단계, 상기 게이트절연막상에 게이트전극 형성용 도전층을 형성하는 단계, 상기 도전층을 패터닝하여 게이트전극을 형성하는 단계, 상기 게이트전극을 마스크로 하여 상기 게이트절연막을 식각하는 단계, 상기 게이트전극을 마스크로 하여 상기 활성층을 일정 두께 식각하는 단계, 기판 전면에 산화막을 증착하는 단계, 상기 산화막을 에치백하여 게이트전극 측면에 스페이서를 형성하는 단계를 포함하여 구성되는 액정표시소자 제조방법을 제공한다.

Description

액정표시소자 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 오프셋구조를 가진 액정표시소자 박막트랜지스터 제조방법을 도시한 공정순서, 제2도는 본 발명의 오프셋구조를 가진 액정표시소자 박막트랜지스터 제조방법을 도시한 공정순서도.

Claims (2)

  1. 기판위에 활성층을 형성하는 단계와, 상기 활성층 상부에 게이트절연막을 형성하는 단계, 상기 게이트절연막상에 게이트전극 형성용 도전층을 형성하는 단계, 상기 도전층을 패터닝하여 게이트전극을 형성하는 단계, 상기 게이트전극을 마스크로 하여 상기 게이트절연막을 식각하는 단계, 상기 게이트전극을 마스크로 하여 상기 활성층을 일정두께 식각하는 단계, 기판 전면에 산화막을 증착하는 단계, 및 상기 산화막을 에치백하여 게이트 전극 측면에 스페이서를 형성하는 단계를 포함하여 구성되는 것을 특징으로 하는 액정표시소자 제조방법.
  2. 제1항에 있어서, 상기 스페이서를 형성하는 단계후에 불순물을 이온주입하여 상기 활성층 소정영역에 소오스 및 드레인영역을 형성하는 단계와, 기판 전면에 층간절연막을 형성하는 단계, 상기 중간절연막을 선택적으로 식각하여 소오스 및 드레인영역을 노출시키는 콘택홀을 형성하는 단계, 상기 층간절연막상에 투명도전막을 형성하고 패터닝하여 상기 콘택홀을 통해 드레인영역과 접속되는 화소전극을 형성하는 단계, 기판 전면에 금속을 증착하고 패터닝하여 상기 콘택홀을 통해 소오스영역과 접속되는 금속배선을 형성하는 단계가 더 포함되는 것을 특징으로 하는 액정표시소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940012099A 1994-05-31 1994-05-31 액정표시소자 제조방법 KR950033616A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940012099A KR950033616A (ko) 1994-05-31 1994-05-31 액정표시소자 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940012099A KR950033616A (ko) 1994-05-31 1994-05-31 액정표시소자 제조방법

Publications (1)

Publication Number Publication Date
KR950033616A true KR950033616A (ko) 1995-12-26

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ID=55313535

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940012099A KR950033616A (ko) 1994-05-31 1994-05-31 액정표시소자 제조방법

Country Status (1)

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KR (1) KR950033616A (ko)

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