KR960043292A - 액정표시소자용 박막트랜지스터 패널 제조방법 - Google Patents
액정표시소자용 박막트랜지스터 패널 제조방법 Download PDFInfo
- Publication number
- KR960043292A KR960043292A KR1019950012105A KR19950012105A KR960043292A KR 960043292 A KR960043292 A KR 960043292A KR 1019950012105 A KR1019950012105 A KR 1019950012105A KR 19950012105 A KR19950012105 A KR 19950012105A KR 960043292 A KR960043292 A KR 960043292A
- Authority
- KR
- South Korea
- Prior art keywords
- active layer
- layer
- substrate
- oxide film
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000010409 thin film Substances 0.000 title claims abstract 4
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract 8
- 239000000758 substrate Substances 0.000 claims abstract 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract 4
- 238000000059 patterning Methods 0.000 claims abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 4
- 229920005591 polysilicon Polymers 0.000 claims abstract 4
- 238000000151 deposition Methods 0.000 claims abstract 2
- 229910052594 sapphire Inorganic materials 0.000 claims abstract 2
- 239000010980 sapphire Substances 0.000 claims abstract 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1229—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different crystal properties within a device or between different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
본 발명은 액정표시소자용 박막트랜지스터 패널 제조방법에 관한 것으로, SOS공정을 개선하여 HDTV등의 높은 이동도가 요구되는 분야에 적용할 수 있도록 한 TFT 제조방법에 관한 것이다.
본 발명은 사파이어기판상에 단결정실리콘을 성장시키는 단계와, 상기 단결정 실리콘층을 아일랜드 형태로 패터닝하여 기판 소정영역에 제1활성층을 형성하는 단계, 상기 단결정실리콘 활성층이 형성된 기판 전면에 산화막을 형성하는 단계,상기 산화막위에 비정질실리콘 또는 폴리실리콘을 증착하는 단계, 상기 비정질실리콘층 또는 폴리실리콘층을 아일랜드 형태로 패터닝하여 기판 소정영역에 제2활성층을 형성하는 단계, 상기 제1활성층 상부의 산화막을 제거하는 단계, 상기 제1활성층 및 제2활성층상에 게이트산화막을 형성하는 단계, 및 상기 제1활성층 및 제2활성층상부의 상기 게이트산화막상에각각 게이트전극을 형성하는 단계를 포함하는 액정표시소자용 박막트랜지스터 패널 제조방법을 제공한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 LCD용 TFT 제조방법을 도시한 공정순서도, 제2도는 본 발명에 의한 TFT 단면구조도.
Claims (2)
- 사파이어기판상에 단결정실리콘을 성장시키는 단계와, 상기 단결정실리콘층을 아일랜드 형태로 패터닝하여기판 소정영역에 제1활성층을 형성하는 단계, 상기 단결정실리콘 활성층이 형성된 기판 전면에 산화막을 형성하는 단계,상기 산화막위에 비정질실리콘 또는 폴리실리콘을 증착하는 단계, 상기 비정질실리콘층 또는 폴리실리콘층을 아일랜드 형태로 패터닝하여 기판 소정영역에 제2활성층을 형성하는 단계, 상기 제1활성층 상부의 산화막을 제거하는 단계, 상기 제1활성층 및 제2활성층상에 게이트산화막을 형성하는 단계, 및 상기 제1활성층 및 제2활성층상부의 상기 게이트산화막상에각각 게이트전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시소자용 박막트랜지스터 패널 제조방법.
- 제1항에 있어서, 상기 제1활성층은 주변회로의 TFT를 구성하고, 제2활성층은 픽셀용 TFT를 구성하는 것을특징으로 하는 액정표시소자용 박막트랜지스터 패널 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012105A KR0151275B1 (ko) | 1995-05-16 | 1995-05-16 | 액정표시소자용 박막트랜지스터 패널 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950012105A KR0151275B1 (ko) | 1995-05-16 | 1995-05-16 | 액정표시소자용 박막트랜지스터 패널 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960043292A true KR960043292A (ko) | 1996-12-23 |
| KR0151275B1 KR0151275B1 (ko) | 1998-10-01 |
Family
ID=19414591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950012105A KR0151275B1 (ko) | 1995-05-16 | 1995-05-16 | 액정표시소자용 박막트랜지스터 패널 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0151275B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4219838B2 (ja) * | 2004-03-24 | 2009-02-04 | シャープ株式会社 | 半導体基板の製造方法、並びに半導体装置の製造方法 |
| KR100682893B1 (ko) * | 2004-10-13 | 2007-02-15 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
-
1995
- 1995-05-16 KR KR1019950012105A patent/KR0151275B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0151275B1 (ko) | 1998-10-01 |
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