KR950024380A - 묘화용 전자빔 시스템의 애퍼처 - Google Patents

묘화용 전자빔 시스템의 애퍼처 Download PDF

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Publication number
KR950024380A
KR950024380A KR1019950000784A KR19950000784A KR950024380A KR 950024380 A KR950024380 A KR 950024380A KR 1019950000784 A KR1019950000784 A KR 1019950000784A KR 19950000784 A KR19950000784 A KR 19950000784A KR 950024380 A KR950024380 A KR 950024380A
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South Korea
Prior art keywords
electron beam
aperture
suspending
throughput
beam system
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KR1019950000784A
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English (en)
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KR0178566B1 (ko
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가쓰유끼 이또
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가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
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Publication of KR950024380A publication Critical patent/KR950024380A/ko
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Publication of KR0178566B1 publication Critical patent/KR0178566B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M11/00—Telephonic communication systems specially adapted for combination with other electrical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
    • G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
    • G05B19/0423—Input/output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Automation & Control Theory (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)

Abstract

[목적] 복수의 패턴을 동시에 형성하고, 리소그래피 공정의 스루풋을 향상시킨다.
[구성] 전자빔 일괄묘화영 애퍼처(11)의 중앙에 복수의 창부를 뚫어 설치하고, 각각의 창부에 서스펜딩 와이어(12)에 의해 고립패턴을 설치한다. 서스펜딩와이어(12) 선폭은, 전자빔으로 일괄묘화를 행하여도, 해상되지 않는 정도로 가는 것이다. 이로써 홀 등의 패턴을 묘하할 수 있으며, 리소그래피 공정의 스루풋을 향상기키는 것이 가능하다. 또, 사용하는 레지스트의 형(포지티브, 네거티브)에 맞추어서, 전자빔 일광묘화용 애퍼처를 작성할 수 있다.

Description

묘화용 전자빔 시스템의 애퍼처
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 관한 전자빔 일괄묘화용 애퍼처를 나타내는 도면.
제2도는 본 발명의 일 실시예에 관한 전자빔 일괄묘화용 애퍼처를 나타내는 도면.
제3도는 본 발명의 일 실시예에 관한 웨이퍼상의 레지스트 패턴의 부분 확대도.
제4도는 본 발명의 일 실시예에 관한 웨이퍼상의 레지스트 패턴의 부분확대도.

Claims (4)

  1. 판형체에 뚫어 설치된 창부에, 고립패턴이 서스펜딩 와이어에 의해 지지되고, 이 판형체에 전자빔을 조사함으로서 전자빔을 형성하는 전자빔 일괄묘화용 애퍼처에 있어서, 상기 고립패턴이 복수 배설된 것을 특징으로 하는 전자빔 일골묘화용 애퍼처.
  2. 제1항에 있어서, 상기 서스펜딩 와이어의 선폭은, 전자빔의 한계 해상도 이하인 것을 특징으로 하는 전자빔 일괄묘화용 애퍼처.
  3. 제1항 또는 제2항에 있어서, 인접하는 상기 서스펜딩 와이어의 간격은, 전자빔 한계 해상도 이상인 것을 특징으로 하는 전자빔 일괄묘화용 애퍼처.
  4. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950000784A 1994-01-19 1995-01-18 전자빔 시스템의 묘화용 애퍼처 KR0178566B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6018995A JP2746098B2 (ja) 1994-01-19 1994-01-19 電子ビーム描画用アパーチャおよび電子ビーム描画方法
JP94-18995 1994-01-19

Publications (2)

Publication Number Publication Date
KR950024380A true KR950024380A (ko) 1995-08-21
KR0178566B1 KR0178566B1 (ko) 1999-04-15

Family

ID=11987153

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950000784A KR0178566B1 (ko) 1994-01-19 1995-01-18 전자빔 시스템의 묘화용 애퍼처

Country Status (3)

Country Link
US (1) US5557110A (ko)
JP (1) JP2746098B2 (ko)
KR (1) KR0178566B1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824437A (en) * 1996-01-09 1998-10-20 Fujitsu Limited Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device
JP3335845B2 (ja) * 1996-08-26 2002-10-21 株式会社東芝 荷電ビーム描画装置及び描画方法
JP3206448B2 (ja) 1996-08-30 2001-09-10 日本電気株式会社 電子ビーム描画装置
JPH10135111A (ja) * 1996-10-31 1998-05-22 Fujitsu Ltd 露光用マスク、露光方法、露光データ作成方法、マスク作成データ作成方法、及び、記憶媒体
JP2000030647A (ja) * 1998-07-10 2000-01-28 Advantest Corp 荷電粒子ビーム露光装置
US6265302B1 (en) 1999-07-12 2001-07-24 Chartered Semiconductor Manufacturing Ltd. Partially recessed shallow trench isolation method for fabricating borderless contacts
US6459090B1 (en) * 1999-07-23 2002-10-01 Nikon Corporation Reticles for charged-particle-beam microlithography that exhibit reduced warp at pattern-defining regions, and semiconductor-device-fabrication methods using same
US6576914B2 (en) * 1999-07-30 2003-06-10 International Business Machines Corporation Redundant printing in e-beam lithography
JP2002140840A (ja) * 2000-11-01 2002-05-17 Pioneer Electronic Corp 光ディスク及びその原盤製造装置
JP4801268B2 (ja) * 2001-03-21 2011-10-26 ルネサスエレクトロニクス株式会社 電子ビーム露光用マスク、電子ビーム露光方法および半導体装置の製造方法
AU2010295585B2 (en) * 2009-09-17 2015-10-08 Sciaky, Inc. Electron beam layer manufacturing
AU2010318559B2 (en) 2009-11-13 2015-08-20 Sciaky, Inc. Electron beam layer manufacturing using scanning electron monitored closed loop control
US8461474B2 (en) 2010-03-31 2013-06-11 Sciaky, Inc. Raster methodology, apparatus and system for electron beam layer manufacturing using closed loop control
US8604411B2 (en) * 2010-11-13 2013-12-10 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062854A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1598219A (en) * 1977-08-10 1981-09-16 Ibm Electron beam system
JPS61183926A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 荷電ビ−ム照射装置
DE3703582C1 (de) * 1987-02-06 1988-04-07 Heidenhain Gmbh Dr Johannes Bestrahlungsmaske zur lithographischen Erzeugung von Mustern
JPH0364016A (ja) * 1989-08-02 1991-03-19 Hitachi Ltd 電子ビーム描画方法および描画用アパーチヤ
JP2663063B2 (ja) * 1991-06-12 1997-10-15 富士通株式会社 荷電ビーム露光方法

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Publication number Publication date
US5557110A (en) 1996-09-17
JP2746098B2 (ja) 1998-04-28
KR0178566B1 (ko) 1999-04-15
JPH07211626A (ja) 1995-08-11

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