DE3775359D1 - Pruefung von photodioden mit elektronenstrahlen. - Google Patents

Pruefung von photodioden mit elektronenstrahlen.

Info

Publication number
DE3775359D1
DE3775359D1 DE8787903167T DE3775359T DE3775359D1 DE 3775359 D1 DE3775359 D1 DE 3775359D1 DE 8787903167 T DE8787903167 T DE 8787903167T DE 3775359 T DE3775359 T DE 3775359T DE 3775359 D1 DE3775359 D1 DE 3775359D1
Authority
DE
Germany
Prior art keywords
photodiods
testing
electron beams
beams
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787903167T
Other languages
English (en)
Inventor
B Burgett
J Joyce
Ichiro Kasai
L Osgood
D Warfield
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Application granted granted Critical
Publication of DE3775359D1 publication Critical patent/DE3775359D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2653—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8787903167T 1986-06-06 1987-04-27 Pruefung von photodioden mit elektronenstrahlen. Expired - Fee Related DE3775359D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/871,231 US4730158A (en) 1986-06-06 1986-06-06 Electron-beam probing of photodiodes
PCT/US1987/000943 WO1987007731A1 (en) 1986-06-06 1987-04-27 Electron-beam probing of photodiodes

Publications (1)

Publication Number Publication Date
DE3775359D1 true DE3775359D1 (de) 1992-01-30

Family

ID=25356986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787903167T Expired - Fee Related DE3775359D1 (de) 1986-06-06 1987-04-27 Pruefung von photodioden mit elektronenstrahlen.

Country Status (6)

Country Link
US (1) US4730158A (de)
EP (1) EP0271508B1 (de)
JP (1) JPH01500548A (de)
DE (1) DE3775359D1 (de)
IL (1) IL82452A (de)
WO (1) WO1987007731A1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding
JPH065691B2 (ja) * 1987-09-26 1994-01-19 株式会社東芝 半導体素子の試験方法および試験装置
US4857839A (en) * 1988-03-02 1989-08-15 Wright State University Method and apparatus for measuring average resistivity and hall-effect of semiconductor wafers
US4875004A (en) * 1988-06-01 1989-10-17 The United States Of America As Represented By The Secretary Of The Army High speed semiconductor characterization technique
US4870352A (en) * 1988-07-05 1989-09-26 Fibertek, Inc. Contactless current probe based on electron tunneling
US4885534A (en) * 1988-09-14 1989-12-05 Santa Barbara Research Center Direct measurement of photodiode impedance using electron beam probing
US5089774A (en) * 1989-12-26 1992-02-18 Sharp Kabushiki Kaisha Apparatus and a method for checking a semiconductor
US5159262A (en) * 1991-07-09 1992-10-27 Cascade Microtech, Inc. Method for measuring the electrical and optical performance of on-wafer microwave devices
US5561377A (en) * 1995-04-14 1996-10-01 Cascade Microtech, Inc. System for evaluating probing networks
US5959459A (en) * 1996-12-10 1999-09-28 International Business Machines Corporation Defect monitor and method for automated contactless inline wafer inspection
US6744268B2 (en) * 1998-08-27 2004-06-01 The Micromanipulator Company, Inc. High resolution analytical probe station
US6198299B1 (en) * 1998-08-27 2001-03-06 The Micromanipulator Company, Inc. High Resolution analytical probe station
US6445202B1 (en) * 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6876187B2 (en) * 2000-07-04 2005-04-05 Canon Kabushiki Kaisha Method and apparatus for measuring photoelectric conversion characteristics
US6914423B2 (en) 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
US6965226B2 (en) 2000-09-05 2005-11-15 Cascade Microtech, Inc. Chuck for holding a device under test
WO2002097535A2 (en) * 2001-05-30 2002-12-05 Nptest, Inc. Sub-resolution alignment of images
EP1432546A4 (de) * 2001-08-31 2006-06-07 Cascade Microtech Inc Optische prüfvorrichtung
US7250779B2 (en) * 2002-11-25 2007-07-31 Cascade Microtech, Inc. Probe station with low inductance path
US7221172B2 (en) * 2003-05-06 2007-05-22 Cascade Microtech, Inc. Switched suspended conductor and connection
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7250626B2 (en) * 2003-10-22 2007-07-31 Cascade Microtech, Inc. Probe testing structure
US7187188B2 (en) * 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
JP4144035B2 (ja) * 2003-12-24 2008-09-03 株式会社島津製作所 Ｔｆｔアレイ検査装置
US9097740B2 (en) * 2004-05-21 2015-08-04 Formfactor, Inc. Layered probes with core
US8988091B2 (en) 2004-05-21 2015-03-24 Microprobe, Inc. Multiple contact probes
US7759949B2 (en) * 2004-05-21 2010-07-20 Microprobe, Inc. Probes with self-cleaning blunt skates for contacting conductive pads
USRE43503E1 (en) 2006-06-29 2012-07-10 Microprobe, Inc. Probe skates for electrical testing of convex pad topologies
US7659739B2 (en) * 2006-09-14 2010-02-09 Micro Porbe, Inc. Knee probe having reduced thickness section for control of scrub motion
US9476911B2 (en) 2004-05-21 2016-10-25 Microprobe, Inc. Probes with high current carrying capability and laser machining methods
US7733101B2 (en) * 2004-05-21 2010-06-08 Microprobe, Inc. Knee probe having increased scrub motion
US7330041B2 (en) * 2004-06-14 2008-02-12 Cascade Microtech, Inc. Localizing a temperature of a device for testing
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
KR20070012597A (ko) * 2005-07-23 2007-01-26 삼성전자주식회사 시스템 보드 검사 장치 및 방법
US7649367B2 (en) * 2005-12-07 2010-01-19 Microprobe, Inc. Low profile probe having improved mechanical scrub and reduced contact inductance
KR100805834B1 (ko) * 2006-01-09 2008-02-21 삼성전자주식회사 수광소자의 테스트 장치 및 그 방법
US7679381B2 (en) * 2006-01-23 2010-03-16 Maxmile Technologies, Llc Method and apparatus for nondestructively evaluating light-emitting materials
US7312617B2 (en) 2006-03-20 2007-12-25 Microprobe, Inc. Space transformers employing wire bonds for interconnections with fine pitch contacts
US8907689B2 (en) * 2006-10-11 2014-12-09 Microprobe, Inc. Probe retention arrangement
US7786740B2 (en) * 2006-10-11 2010-08-31 Astria Semiconductor Holdings, Inc. Probe cards employing probes having retaining portions for potting in a potting region
US7514948B2 (en) * 2007-04-10 2009-04-07 Microprobe, Inc. Vertical probe array arranged to provide space transformation
US8723546B2 (en) 2007-10-19 2014-05-13 Microprobe, Inc. Vertical guided layered probe
US7671610B2 (en) * 2007-10-19 2010-03-02 Microprobe, Inc. Vertical guided probe array providing sideways scrub motion
US8230593B2 (en) * 2008-05-29 2012-07-31 Microprobe, Inc. Probe bonding method having improved control of bonding material
US8319503B2 (en) * 2008-11-24 2012-11-27 Cascade Microtech, Inc. Test apparatus for measuring a characteristic of a device under test
US8073019B2 (en) * 2009-03-02 2011-12-06 Jian Liu 810 nm ultra-short pulsed fiber laser
CA2873101A1 (en) 2012-06-12 2013-12-19 Dow Global Technologies Llc An apparatus and method for locating a discontinuity in a solar array
KR20140028701A (ko) 2012-08-30 2014-03-10 삼성전자주식회사 반도체 소자의 검사 방법 및 이에 사용되는 반도체 검사 장비

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187932A (de) * 1975-01-31 1976-07-31 Hitachi Ltd
US4184111A (en) * 1978-07-26 1980-01-15 Nasa Driver for solar cell I-V characteristic plots
DE3036734A1 (de) * 1980-09-29 1982-05-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur messung von widerstaenden und kapazitaeten von elektronischen bauelementen
DE3036660A1 (de) * 1980-09-29 1982-05-19 Siemens AG, 1000 Berlin und 8000 München Anordnung fuer stroboskopische potentialmessungen mit einem elektronenstrahl-messgeraet
US4528503A (en) * 1981-03-19 1985-07-09 The United States Of America As Represented By The Department Of Energy Method and apparatus for I-V data acquisition from solar cells
JPS5823938A (ja) * 1981-07-28 1983-02-12 日本加工株式会社 立体柄模様の起毛状繊維製品とその製造方法
JPS58123650A (ja) * 1982-01-18 1983-07-22 Toshiba Corp ストロボ走査電子顕微鏡装置
US4456880A (en) * 1982-02-04 1984-06-26 Warner Thomas H I-V Curve tracer employing parametric sampling

Also Published As

Publication number Publication date
US4730158A (en) 1988-03-08
EP0271508A1 (de) 1988-06-22
IL82452A0 (en) 1987-11-30
EP0271508B1 (de) 1991-12-18
IL82452A (en) 1990-12-23
WO1987007731A1 (en) 1987-12-17
JPH01500548A (ja) 1989-02-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee