KR910008826A - 대전해소방법 - Google Patents

대전해소방법 Download PDF

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Publication number
KR910008826A
KR910008826A KR1019900016659A KR900016659A KR910008826A KR 910008826 A KR910008826 A KR 910008826A KR 1019900016659 A KR1019900016659 A KR 1019900016659A KR 900016659 A KR900016659 A KR 900016659A KR 910008826 A KR910008826 A KR 910008826A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
daejeon
resolve
irradiated
beams
Prior art date
Application number
KR1019900016659A
Other languages
English (en)
Other versions
KR950002182B1 (ko
Inventor
유키마사 요시다
가츠야 오쿠무라
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910008826A publication Critical patent/KR910008826A/ko
Application granted granted Critical
Publication of KR950002182B1 publication Critical patent/KR950002182B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

대전해소방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 1실시예에 따른 이온주입장치의 구성을 나타낸 단면도
제 2 도 및 제 3 도는 웨이퍼내에서의 전자충격전류를 나타낸 웨이퍼의 단면도.

Claims (2)

  1. 이온빔(11.41)을 반도체기판(13)상에 주입해서 반도체기판(13)내에 불순물을 형성할 경우, 상기 이온빔(11,41)의 조사부분에 고가속된 전자빔을 조사함으로써 상기 반도체기판(13)상에서 대전을 해소할 수 있도록 된 것을 특징으로 하는 대전해소방법.
  2. 제 1 항에 있어서, 상기 고가속된 전자빔은 상기 이온빔과 합류하여 상기 반도체기판(13)상의 동일장소에 조사되도록 된 것을 특징으로 하는 대전해소방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900016659A 1989-10-25 1990-10-19 대전해소방법 KR950002182B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1276012A JP2695016B2 (ja) 1989-10-25 1989-10-25 イオン注入装置の帯電解消方法
JP01-276012 1989-10-25

Publications (2)

Publication Number Publication Date
KR910008826A true KR910008826A (ko) 1991-05-31
KR950002182B1 KR950002182B1 (ko) 1995-03-14

Family

ID=17563556

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016659A KR950002182B1 (ko) 1989-10-25 1990-10-19 대전해소방법

Country Status (4)

Country Link
EP (1) EP0424925B1 (ko)
JP (1) JP2695016B2 (ko)
KR (1) KR950002182B1 (ko)
DE (1) DE69024172T2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111769042B (zh) * 2020-07-15 2023-06-27 济南晶正电子科技有限公司 一种离子注入的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
JPH0815065B2 (ja) * 1987-07-23 1996-02-14 富士通株式会社 半導体装置のイオン注入装置及びその注入方法
JPH01220350A (ja) * 1988-02-26 1989-09-04 Hitachi Ltd 帯電抑制方法及びその装置を用いた粒子線照射装置
DE69111758T2 (de) * 1990-03-02 1995-12-07 Varian Associates Gerät zur aufladungsneutralisierung in einem ionenimplantierungssystem.

Also Published As

Publication number Publication date
JP2695016B2 (ja) 1997-12-24
EP0424925A2 (en) 1991-05-02
JPH03138845A (ja) 1991-06-13
DE69024172T2 (de) 1996-05-30
DE69024172D1 (de) 1996-01-25
EP0424925B1 (en) 1995-12-13
EP0424925A3 (en) 1992-04-15
KR950002182B1 (ko) 1995-03-14

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