DE3887891D1 - Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel. - Google Patents

Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel.

Info

Publication number
DE3887891D1
DE3887891D1 DE88810742T DE3887891T DE3887891D1 DE 3887891 D1 DE3887891 D1 DE 3887891D1 DE 88810742 T DE88810742 T DE 88810742T DE 3887891 T DE3887891 T DE 3887891T DE 3887891 D1 DE3887891 D1 DE 3887891D1
Authority
DE
Germany
Prior art keywords
voltage source
low voltage
ion beams
narrow electron
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88810742T
Other languages
English (en)
Other versions
DE3887891T2 (de
Inventor
Hans-Werner Dr Fink
Roger Dr Morin
Heinz Schmid
Werner Stocker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3887891D1 publication Critical patent/DE3887891D1/de
Application granted granted Critical
Publication of DE3887891T2 publication Critical patent/DE3887891T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE3887891T 1988-11-01 1988-11-01 Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel. Expired - Fee Related DE3887891T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88810742A EP0366851B1 (de) 1988-11-01 1988-11-01 Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel

Publications (2)

Publication Number Publication Date
DE3887891D1 true DE3887891D1 (de) 1994-03-24
DE3887891T2 DE3887891T2 (de) 1994-08-11

Family

ID=8200614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3887891T Expired - Fee Related DE3887891T2 (de) 1988-11-01 1988-11-01 Niederspannungsquelle für schmale Elektronen-/Ionenstrahlenbündel.

Country Status (5)

Country Link
US (1) US4954711A (de)
EP (1) EP0366851B1 (de)
JP (1) JPH0656745B2 (de)
CA (1) CA1311863C (de)
DE (1) DE3887891T2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68917310T2 (de) * 1989-12-13 1995-03-09 Ibm Delta-phi-Mikrolinse für Teilchenstrahlen niedriger Energie.
ES2029426A6 (es) * 1991-03-22 1992-08-01 Univ Madrid Obtencion de una fuente atomica de iones metalicos produciendo una fusion superficial por medio de un campo electrico.
DE69205676D1 (de) * 1992-04-01 1995-11-30 Ibm Intensive, kohärente gepulste Elektronenquelle.
US5654548A (en) * 1992-08-06 1997-08-05 International Business Machines Corporation Source for intense coherent electron pulses
JP3153366B2 (ja) * 1992-12-04 2001-04-09 日本電子株式会社 走査トンネル顕微鏡
JP4093590B2 (ja) * 1994-10-03 2008-06-04 エフイーアイ カンパニー 針及び隔膜のような抽出電極を有する電子源を具えている粒子光学装置
US5834781A (en) * 1996-02-14 1998-11-10 Hitachi, Ltd. Electron source and electron beam-emitting apparatus equipped with same
US6740889B1 (en) * 1998-09-28 2004-05-25 Applied Materials, Inc. Charged particle beam microscope with minicolumn
DE60042679D1 (de) 2000-03-16 2009-09-17 Hitachi Ltd Vorrichtung zum Erzeugen eines Stromes von Ladungsträgern
GB2374979A (en) * 2000-12-28 2002-10-30 Ims Ionen Mikrofab Syst A field ionisation source
CN1145579C (zh) * 2001-07-11 2004-04-14 方墨希 荷负电纳米粒子产生装置及方法
US7504639B2 (en) * 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7321118B2 (en) * 2005-06-07 2008-01-22 Alis Corporation Scanning transmission ion microscope
US7786451B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7557358B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7488952B2 (en) * 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7495232B2 (en) * 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7518122B2 (en) 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7521693B2 (en) * 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7414243B2 (en) * 2005-06-07 2008-08-19 Alis Corporation Transmission ion microscope
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7485873B2 (en) * 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US7511280B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7554097B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US20070116373A1 (en) * 2005-11-23 2007-05-24 Sonosite, Inc. Multi-resolution adaptive filtering
WO2007067296A2 (en) * 2005-12-02 2007-06-14 Alis Corporation Ion sources, systems and methods
EP1826809A1 (de) 2006-02-22 2007-08-29 FEI Company Partikel-Optisches Gerät ausgestattet mit einer Gasionenquelle
WO2007109666A2 (en) * 2006-03-20 2007-09-27 Alis Corporation Systems and methods for a helium ion pump
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
US7888654B2 (en) * 2007-01-24 2011-02-15 Fei Company Cold field emitter
EP2091065A1 (de) 2008-02-18 2009-08-19 ETH Zürich Elektronenmikroskop zur Erfassung von Niedrigspannungsfeldemissionen
US8736170B1 (en) 2011-02-22 2014-05-27 Fei Company Stable cold field emission electron source
US9941094B1 (en) 2017-02-01 2018-04-10 Fei Company Innovative source assembly for ion beam production

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814975A (en) * 1969-08-06 1974-06-04 Gen Electric Electron emission system
US4020387A (en) * 1972-02-14 1977-04-26 American Optical Corporation Field emission electron gun
US3959651A (en) * 1974-04-24 1976-05-25 American Optical Corporation Electron microscope
JPS57128433A (en) * 1980-12-27 1982-08-10 Denki Kagaku Kogyo Kk High luminance electron gun
JPS5916255A (ja) * 1982-07-19 1984-01-27 Nippon Telegr & Teleph Corp <Ntt> 電子銃
US4427886A (en) * 1982-08-02 1984-01-24 Wisconsin Alumni Research Foundation Low voltage field emission electron gun
DE3677062D1 (de) * 1985-06-04 1991-02-28 Denki Kagaku Kogyo Kk Quelle geladener teilchen.
US4740705A (en) * 1986-08-11 1988-04-26 Electron Beam Memories Axially compact field emission cathode assembly
US4760567A (en) * 1986-08-11 1988-07-26 Electron Beam Memories Electron beam memory system with ultra-compact, high current density electron gun
FR2607623B1 (fr) * 1986-11-27 1995-02-17 Commissariat Energie Atomique Source d'electrons polarises de spin, utilisant une cathode emissive a micropointes, application en physique des interactions electrons-matiere ou electrons-particules, physique des plasmas, microscopie electronique

Also Published As

Publication number Publication date
JPH0656745B2 (ja) 1994-07-27
JPH02186545A (ja) 1990-07-20
US4954711A (en) 1990-09-04
EP0366851A1 (de) 1990-05-09
CA1311863C (en) 1992-12-22
DE3887891T2 (de) 1994-08-11
EP0366851B1 (de) 1994-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee