DE3689232D1 - Ionenquelle. - Google Patents

Ionenquelle.

Info

Publication number
DE3689232D1
DE3689232D1 DE86117505T DE3689232T DE3689232D1 DE 3689232 D1 DE3689232 D1 DE 3689232D1 DE 86117505 T DE86117505 T DE 86117505T DE 3689232 T DE3689232 T DE 3689232T DE 3689232 D1 DE3689232 D1 DE 3689232D1
Authority
DE
Germany
Prior art keywords
ion source
ion
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86117505T
Other languages
English (en)
Other versions
DE3689232T2 (de
Inventor
Tadashi Sato
Yasunori Ohno
Tomoe Kurosawa
Nobuya Sekimoto
Yoshimi Hakamata
Yukio Kurosawa
Kunio Hirasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3689232D1 publication Critical patent/DE3689232D1/de
Publication of DE3689232T2 publication Critical patent/DE3689232T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
DE86117505T 1986-06-16 1986-12-16 Ionenquelle. Expired - Fee Related DE3689232T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61138092A JPS62296332A (ja) 1986-06-16 1986-06-16 イオン源

Publications (2)

Publication Number Publication Date
DE3689232D1 true DE3689232D1 (de) 1993-12-02
DE3689232T2 DE3689232T2 (de) 1994-02-24

Family

ID=15213763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE86117505T Expired - Fee Related DE3689232T2 (de) 1986-06-16 1986-12-16 Ionenquelle.

Country Status (4)

Country Link
US (1) US4847476A (de)
EP (1) EP0249658B1 (de)
JP (1) JPS62296332A (de)
DE (1) DE3689232T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105123A (en) * 1988-10-27 1992-04-14 Battelle Memorial Institute Hollow electrode plasma excitation source
US5089746A (en) * 1989-02-14 1992-02-18 Varian Associates, Inc. Production of ion beams by chemically enhanced sputtering of solids
US5198677A (en) * 1991-10-11 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Production of N+ ions from a multicusp ion beam apparatus
US5473165A (en) * 1993-11-16 1995-12-05 Stinnett; Regan W. Method and apparatus for altering material
JPH08102279A (ja) * 1994-09-30 1996-04-16 Hitachi Ltd マイクロ波プラズマ生成装置
US6037587A (en) * 1997-10-17 2000-03-14 Hewlett-Packard Company Chemical ionization source for mass spectrometry
AUPP479298A0 (en) 1998-07-21 1998-08-13 Sainty, Wayne Ion source
JP2001056395A (ja) * 1999-06-11 2001-02-27 Ramuda:Kk マイナスイオン放射方法及びその装置
US7023128B2 (en) * 2001-04-20 2006-04-04 Applied Process Technologies, Inc. Dipole ion source
WO2002086185A1 (en) * 2001-04-20 2002-10-31 Applied Process Technologies Penning discharge plasma source
GB0131097D0 (en) * 2001-12-31 2002-02-13 Applied Materials Inc Ion sources
JP2013020737A (ja) * 2011-07-08 2013-01-31 Nissin Ion Equipment Co Ltd 防着板支持部材およびこれを備えたイオン源
KR20180066575A (ko) * 2016-12-09 2018-06-19 (주)트리플코어스코리아 아크 방전을 이용하는 플라즈마 토치용 양극 구조물 및 이를 구비하는 플라즈마 토치
JP6642612B2 (ja) * 2018-04-12 2020-02-05 日新イオン機器株式会社 イオン源、イオンビーム照射装置及びイオン源の運転方法
CN111681936B (zh) * 2020-06-09 2022-06-14 中国科学院合肥物质科学研究院 一种高能离子注入机用的尖端场形负氢离子源装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277939A (en) * 1979-04-09 1981-07-14 Hughes Aircraft Company Ion beam profile control apparatus and method
JPS5679900A (en) * 1979-12-05 1981-06-30 Hitachi Ltd Ion source
US4431062A (en) * 1980-01-09 1984-02-14 Robert Bosch Gmbh Rotating drive for impact hammer
JPS6014040B2 (ja) * 1980-07-07 1985-04-11 財団法人 微生物化学研究会 ベスタチン新誘導体及びその製造法
US4383177A (en) * 1980-12-24 1983-05-10 International Business Machines Corporation Multipole implantation-isotope separation ion beam source
US4491735A (en) * 1982-04-05 1985-01-01 The Perkin-Elmer Corporation Restricted ion source of high current density
US4481062A (en) * 1982-09-02 1984-11-06 Kaufman Harold R Electron bombardment ion sources
US4529571A (en) * 1982-10-27 1985-07-16 The United States Of America As Represented By The United States Department Of Energy Single-ring magnetic cusp low gas pressure ion source
JPS60202649A (ja) * 1984-03-26 1985-10-14 Seiko Instr & Electronics Ltd 二重格子陽極電子衝撃型イオン源
EP0169744A3 (de) * 1984-07-26 1987-06-10 United Kingdom Atomic Energy Authority Ionenquelle

Also Published As

Publication number Publication date
EP0249658A3 (en) 1988-11-17
DE3689232T2 (de) 1994-02-24
JPS62296332A (ja) 1987-12-23
EP0249658A2 (de) 1987-12-23
EP0249658B1 (de) 1993-10-27
US4847476A (en) 1989-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee