DE3789478D1 - Induktiv angeregte Ionenquelle. - Google Patents

Induktiv angeregte Ionenquelle.

Info

Publication number
DE3789478D1
DE3789478D1 DE87110646T DE3789478T DE3789478D1 DE 3789478 D1 DE3789478 D1 DE 3789478D1 DE 87110646 T DE87110646 T DE 87110646T DE 3789478 T DE3789478 T DE 3789478T DE 3789478 D1 DE3789478 D1 DE 3789478D1
Authority
DE
Germany
Prior art keywords
ion source
excited ion
inductively excited
inductively
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87110646T
Other languages
English (en)
Inventor
Juergen Dr Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Balzers und Leybold Deutschland Holding AG
Original Assignee
Leybold AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold AG filed Critical Leybold AG
Priority to DE87110646T priority Critical patent/DE3789478D1/de
Application granted granted Critical
Publication of DE3789478D1 publication Critical patent/DE3789478D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
DE87110646T 1986-09-24 1987-07-23 Induktiv angeregte Ionenquelle. Expired - Fee Related DE3789478D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE87110646T DE3789478D1 (de) 1986-09-24 1987-07-23 Induktiv angeregte Ionenquelle.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3632340A DE3632340C2 (de) 1986-09-24 1986-09-24 Induktiv angeregte Ionenquelle
DE87110646T DE3789478D1 (de) 1986-09-24 1987-07-23 Induktiv angeregte Ionenquelle.

Publications (1)

Publication Number Publication Date
DE3789478D1 true DE3789478D1 (de) 1994-05-05

Family

ID=6310179

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3632340A Expired - Fee Related DE3632340C2 (de) 1986-09-24 1986-09-24 Induktiv angeregte Ionenquelle
DE87110646T Expired - Fee Related DE3789478D1 (de) 1986-09-24 1987-07-23 Induktiv angeregte Ionenquelle.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3632340A Expired - Fee Related DE3632340C2 (de) 1986-09-24 1986-09-24 Induktiv angeregte Ionenquelle

Country Status (4)

Country Link
US (1) US4849675A (de)
EP (1) EP0261338B1 (de)
JP (1) JPS63184233A (de)
DE (2) DE3632340C2 (de)

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US6518195B1 (en) 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
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US5308461A (en) * 1992-01-14 1994-05-03 Honeywell Inc. Method to deposit multilayer films
WO1994006263A1 (en) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill High pressure magnetically assisted inductively coupled plasma
DE4241927C2 (de) * 1992-12-11 1994-09-22 Max Planck Gesellschaft Zur Anordnung in einem Vakuumgefäß geeignete selbsttragende isolierte Elektrodenanordnung, insbesondere Antennenspule für einen Hochfrequenz-Plasmagenerator
DE4242894A1 (de) * 1992-12-18 1994-06-23 Leybold Ag Vorrichtung zur Mehrfacheinspeisung von HF-Leistung in Kathodenkörpern
CA2116821C (en) * 1993-03-05 2003-12-23 Stephen Esler Anderson Improvements in plasma mass spectrometry
US6238533B1 (en) * 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5962923A (en) 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
EP0774772A1 (de) * 1995-11-17 1997-05-21 Applied Materials, Inc. Verfahren zum physikalischen Ätzen von elektrisch leitenden Siliziumoberflächen
US5977715A (en) * 1995-12-14 1999-11-02 The Boeing Company Handheld atmospheric pressure glow discharge plasma source
US6087615A (en) * 1996-01-23 2000-07-11 Fraunhofer-Gesellschaft Zur Forderung Ion source for an ion beam arrangement
DE19618734C2 (de) * 1996-01-23 1999-08-26 Fraunhofer Ges Forschung Ionenquelle für eine Ionenstrahlanlage
US5877471A (en) * 1997-06-11 1999-03-02 The Regents Of The University Of California Plasma torch having a cooled shield assembly
US6107626A (en) * 1997-10-14 2000-08-22 The University Of Washington Device and method for forming ions
US5869832A (en) * 1997-10-14 1999-02-09 University Of Washington Device and method for forming ions
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
KR20010032498A (ko) * 1997-11-26 2001-04-25 조셉 제이. 스위니 손상없는 스컵쳐 코팅 증착
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6284110B1 (en) 1999-04-14 2001-09-04 Tokyo Electron Limited Method and apparatus for radio frequency isolation of liquid heat transfer medium supply and discharge lines
US6239553B1 (en) 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
DE10008484C2 (de) * 2000-02-24 2003-07-17 Ccr Gmbh Beschichtungstechnolo Kühlbare Hochfrequenz-Luftspule
US6441555B1 (en) * 2000-03-31 2002-08-27 Lam Research Corporation Plasma excitation coil
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6304036B1 (en) 2000-08-08 2001-10-16 Archimedes Technology Group, Inc. System and method for initiating plasma production
DE10058326C1 (de) * 2000-11-24 2002-06-13 Astrium Gmbh Induktiv gekoppelte Hochfrequenz-Elektronenquelle mit reduziertem Leistungsbedarf durch elektrostatischen Einschluss von Elektronen
JP2002210330A (ja) * 2001-01-19 2002-07-30 Pearl Kogyo Kk 半導体プロセス用排ガス処理装置
US6855225B1 (en) * 2002-06-25 2005-02-15 Novellus Systems, Inc. Single-tube interlaced inductively coupling plasma source
DE10231738B4 (de) * 2002-07-13 2005-03-17 Deutsches Zentrum für Luft- und Raumfahrt e.V. Anpassungsvorrichtung für eine Induktions-Plasmabrennervorrichtung und Verfahren zur elektrischen Steuerung und Regelung einer Induktions-Plasmabrennervorrichtung
DE10231739B4 (de) * 2002-07-13 2004-10-28 Deutsches Zentrum für Luft- und Raumfahrt e.V. Induktions-Plasmabrennervorrichtung
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
US7064322B2 (en) * 2004-10-01 2006-06-20 Agilent Technologies, Inc. Mass spectrometer multipole device
US20060081185A1 (en) * 2004-10-15 2006-04-20 Justin Mauck Thermal management of dielectric components in a plasma discharge device
KR100599092B1 (ko) * 2004-11-29 2006-07-12 삼성전자주식회사 구동 주파수 조절에 의한 전자기유도 가속장치
KR100599094B1 (ko) * 2004-11-29 2006-07-12 삼성전자주식회사 코일의 권선수 조절에 의한 전자기 유도 가속장치
US9137884B2 (en) * 2006-11-29 2015-09-15 Lam Research Corporation Apparatus and method for plasma processing
JP4955027B2 (ja) * 2009-04-02 2012-06-20 クリーン・テクノロジー株式会社 排ガス処理装置における磁場によるプラズマの制御方法
US8884178B2 (en) * 2010-10-20 2014-11-11 Lam Research Corporation Methods and apparatus for igniting and sustaining plasma
WO2012151639A1 (en) * 2011-05-12 2012-11-15 Roderick William Boswell Plasma micro-thruster
JP6702640B2 (ja) * 2013-06-17 2020-06-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマリアクタ用の強化されたプラズマ源
JP6476020B2 (ja) * 2015-03-10 2019-02-27 株式会社日立ハイテクサイエンス 誘導結合プラズマ発生装置及び誘導結合プラズマ分析装置
RU2585340C1 (ru) * 2015-06-03 2016-05-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский авиационный институт (национальный исследовательский университет)" Газоразрядный узел высокочастотного ионного двигателя
EP3145275B1 (de) * 2015-09-18 2022-04-20 Technische Hochschule Mittelhessen Induktionsheizspule
TWI783068B (zh) * 2017-11-17 2022-11-11 瑞士商艾維太克股份有限公司 將ｒｆ功率從ｒｆ供應產生器傳送至至少一個真空電漿處理模組的方法、ｒｆ真空電漿處理模組、電漿處理設備及製造基板之方法
RU2749668C1 (ru) * 2020-12-22 2021-06-16 Общество с ограниченной ответственностью «ПЛАЗТРЕК» (ООО «ПЛАЗТРЕК») Источник ионов

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US3084281A (en) * 1956-11-30 1963-04-02 Carroll B Mills Ion source
JPS4110320Y1 (de) * 1964-01-20 1966-05-16
CH528847A (de) * 1971-02-23 1972-09-30 Bbc Brown Boveri & Cie Hochfrequenz-Induktionsplasmabrenner
BE788661A (fr) * 1971-10-05 1973-03-12 Lefe Corp Dispositif d'attaque d'une matiere par un gaz dans un champ electromagnetique
US4362632A (en) * 1974-08-02 1982-12-07 Lfe Corporation Gas discharge apparatus
DE2544275A1 (de) * 1975-10-03 1977-04-14 Bbc Brown Boveri & Cie Fluessigkeitsgekuehlte induktionsspule
EP0169744A3 (de) * 1984-07-26 1987-06-10 United Kingdom Atomic Energy Authority Ionenquelle
JPH0650110B2 (ja) * 1985-09-13 1994-06-29 株式会社東芝 Ｒｆ型イオン源
GB8522976D0 (en) * 1985-09-17 1985-10-23 Atomic Energy Authority Uk Ion sources

Also Published As

Publication number Publication date
EP0261338A3 (en) 1989-07-26
JPS63184233A (ja) 1988-07-29
EP0261338B1 (de) 1994-03-30
DE3632340C2 (de) 1998-01-15
DE3632340A1 (de) 1988-03-31
EP0261338A2 (de) 1988-03-30
US4849675A (en) 1989-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: BALZERS UND LEYBOLD DEUTSCHLAND HOLDING AG, 63450

8339 Ceased/non-payment of the annual fee