KR950015726A - 수지밀봉형 반도체장치 및 그 제조방법 - Google Patents

수지밀봉형 반도체장치 및 그 제조방법 Download PDF

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Publication number
KR950015726A
KR950015726A KR1019940031641A KR19940031641A KR950015726A KR 950015726 A KR950015726 A KR 950015726A KR 1019940031641 A KR1019940031641 A KR 1019940031641A KR 19940031641 A KR19940031641 A KR 19940031641A KR 950015726 A KR950015726 A KR 950015726A
Authority
KR
South Korea
Prior art keywords
semiconductor element
resin
mounting
semiconductor
placing portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019940031641A
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English (en)
Korean (ko)
Inventor
가즈이치 고메나카
가즈히토 고바야시
Original Assignee
사토 후미오
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사토 후미오, 가부시키가이샤 도시바 filed Critical 사토 후미오
Publication of KR950015726A publication Critical patent/KR950015726A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01033—Arsenic [As]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
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    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L2924/01077—Iridium [Ir]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
KR1019940031641A 1993-11-29 1994-11-29 수지밀봉형 반도체장치 및 그 제조방법 Abandoned KR950015726A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5320842A JPH07153896A (ja) 1993-11-29 1993-11-29 樹脂封止型半導体装置及びその製造方法
JP93-320842 1993-11-29

Publications (1)

Publication Number Publication Date
KR950015726A true KR950015726A (ko) 1995-06-17

Family

ID=18125857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940031641A Abandoned KR950015726A (ko) 1993-11-29 1994-11-29 수지밀봉형 반도체장치 및 그 제조방법

Country Status (5)

Country Link
EP (1) EP0655782A3 (enExample)
JP (1) JPH07153896A (enExample)
KR (1) KR950015726A (enExample)
CN (1) CN1111823A (enExample)
TW (1) TW301783B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19639181B4 (de) * 1996-09-24 2006-08-17 Infineon Technologies Ag Mikroelektronisches Bauelement mit einem Zuleitungsrahmen und einem integrierten Schaltkreis
US7034382B2 (en) * 2001-04-16 2006-04-25 M/A-Com, Inc. Leadframe-based chip scale package
JP2006013170A (ja) * 2004-06-25 2006-01-12 Matsushita Electric Works Ltd 電子部品並びに電子部品の製造方法
CN101233608B (zh) * 2005-08-04 2011-02-02 日立化成工业株式会社 连接构造体的制造方法
JP2008034416A (ja) * 2006-07-26 2008-02-14 Denso Corp 半導体装置
JP5281797B2 (ja) * 2008-01-22 2013-09-04 アスモ株式会社 樹脂封止型半導体装置
JP5286948B2 (ja) * 2008-06-04 2013-09-11 株式会社デンソー 基板および電子装置の製造方法
JP2012089563A (ja) * 2010-10-15 2012-05-10 Sanken Electric Co Ltd 半導体モジュール
CN102157484B (zh) * 2011-02-28 2015-05-06 日月光半导体制造股份有限公司 导线架与芯片封装体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5295173A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Lead frame
US4884124A (en) * 1986-08-19 1989-11-28 Mitsubishi Denki Kabushiki Kaisha Resin-encapsulated semiconductor device
JPH02172267A (ja) * 1988-12-26 1990-07-03 Hitachi Ltd リードフレーム
JPH0319261A (ja) * 1989-06-15 1991-01-28 Matsushita Electron Corp 半導体用リードフレーム
JPH05102207A (ja) * 1991-10-11 1993-04-23 Dainippon Printing Co Ltd リードフレーム
JPH0621317A (ja) * 1992-07-02 1994-01-28 Seiko Epson Corp 半導体パッケージの製造方法

Also Published As

Publication number Publication date
EP0655782A3 (en) 1995-10-18
JPH07153896A (ja) 1995-06-16
CN1111823A (zh) 1995-11-15
TW301783B (enExample) 1997-04-01
EP0655782A2 (en) 1995-05-31

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