KR950010011A - 저항기 구조 및 저항값 설정 방법 - Google Patents

저항기 구조 및 저항값 설정 방법 Download PDF

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Publication number
KR950010011A
KR950010011A KR1019940024430A KR19940024430A KR950010011A KR 950010011 A KR950010011 A KR 950010011A KR 1019940024430 A KR1019940024430 A KR 1019940024430A KR 19940024430 A KR19940024430 A KR 19940024430A KR 950010011 A KR950010011 A KR 950010011A
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South Korea
Prior art keywords
resistor
resistors
layer
heating element
forming
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KR1019940024430A
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KR100335019B1 (ko
Inventor
엘. 스프레긴 게리
제이. 아브레쉬 마틴
비. 뉴턴 윌리엄
제이. 이 렌윈
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빈센트 비. 인그라시아
모토로라 인코포레이티드
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Publication of KR950010011A publication Critical patent/KR950010011A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 가열소자(35) 및 레지스터(32)를 갖는 레지스터 구조(10)와, 그리고 레지스터(32)를 트리밍하는 방법에 관한 것이다. 가열소자(35)는 유전 재료층(19)에 의해 레지스터(32)로 부터 분리되어 있다. 레지스터(32)는 에치 제어층(22)상에 저항재료층(23)을 구성하고 있다.
레지스터(32)는 가열소자(35)를 통해 전류펄스(62)를 제공하므로서 트리밍 된다. 전류 펄스에 의해 발생된 열은 레지스터(32)로 흐르고 레지스터(32)를 어닐하거나 트림(trim)한다. 레지스터 가변 트리밍, 예를 들면 교류 전압 레지스터 접합(30,31)이 모니터되며, 전류 펄스는 레지스터 가변 트리밍(63)의 값에 따라 변조된다. 트리밍 단계는 레지스터(32)의 소정 저항값이 성취될때 종료된다.

Description

저항기 구조 및 저항값 설정 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1 실시예에 대로 제2도의 절취선(1-1)을 따라 크게 확대된 단면도
제2도는 본 발명의 제1 실시예에 따르는 레지스터 구조의 부분 단면도

Claims (5)

  1. 레지스터(32,47,57)의 저항값을 설정하는 방법에 있어서, 주요면(17)을 갖는 기판(16)을 제공하는 단계와, 상기 주요면(17)에 가열소자(18)를 형성하는 단계와, 상기 가열소자(18)의 위에 절연층(19)을 형성하는 단계와, 상기 절연층(19)의 일부가 레지스터(32,47,57) 및 가열소자(18) 사이에 넣어지는 경우, 상기 절연층(19)에 상기 레지스터(32,47,57)를 형성하는 단계 및 상기 레지스터(32,47,57)를 어닐링 하는 (62)단계를 포함하는 것을 특징으로 하는 레지스터의 저항값 설정방법.
  2. 제1항에 있어서, 상기 레지스터(32,47,57)를 어닐링 하는 상기 단계(62)가 상기 가열 소자(18)를 통해 전류 펄스를 인가하는 것을 단계를 포함하는 것을 특징으로 하는 레지스터의 저항값 설정방법.
  3. 제2항에 있어서, 전류 펄스를 인가하는 상기 단계가 상기 가열소자(18)를 통해 적어도 하나의 전류 펄스를 전송하는 단계 및 상기 레지스터(32,47,57)의 제1 접합(33) 및 제2 접합(34) 사이의 전압 값을 모니터링 하는 단계를 포함하는 것을 특징으로 하는 레지스터의 저항값 설정방법.
  4. 레지스터(32,47,57)의 저항값을 조정하는 방법에 있어서, 도전층(18)을 제공하는 단계와, 상기 도전층(18)에 절연재료층(19)을 형성하는 단계와, 상기 절연재료층(19)에 에치 제어층(22)를 형성하는 단계와, 상기 에치제어층(22) 및 저항 재료층(23)이 상기 레지스터(32,47,57)를 형성하기 위해 결합되는 경우, 상기 에치 제어층(22)에 저항 재료층(23)을 형성하는 단계와, 전기적 접합(30,31,45,46,55,56)을 저항 재료층(23)에 형성하는 단계 및, 상기 저항 재료층(23)을 어닐링 하는 단계를 포함하는 것을 특징으로 하는 레지스터의 저항값 조정방법.
  5. 집적회로가 저항률을 갖는 제1 도전재료(22,23)와, 제2 도전재료(18) 및, 전기적으로 상기 제1(22,23) 및 제2 (18) 도전재료 사이에 배치되는 절연재료(!9)를 포함하는데, 상기 제2 도전재료(18)를 통해 인가된 전류는 상기 제1 도전재료(22,23)를 가열해서, 상기 제1 도전 재료(22,23)의 저항률을 조정하는 것을 특징으로 하는 집적회로.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940024430A 1993-09-29 1994-09-28 저항기 구조물 및 저항값 설정 방법 KR100335019B1 (ko)

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US08/128,282 US5466484A (en) 1993-09-29 1993-09-29 Resistor structure and method of setting a resistance value
US128.282 1993-09-29

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KR100335019B1 KR100335019B1 (ko) 2002-11-27

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US5635893A (en) 1997-06-03
JP3531983B2 (ja) 2004-05-31
US5466484A (en) 1995-11-14
KR100335019B1 (ko) 2002-11-27
JPH07153610A (ja) 1995-06-16

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