KR940027147A - 반도체 회로장치 및 그 펄스 생성방법 - Google Patents

반도체 회로장치 및 그 펄스 생성방법 Download PDF

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Publication number
KR940027147A
KR940027147A KR1019940010743A KR19940010743A KR940027147A KR 940027147 A KR940027147 A KR 940027147A KR 1019940010743 A KR1019940010743 A KR 1019940010743A KR 19940010743 A KR19940010743 A KR 19940010743A KR 940027147 A KR940027147 A KR 940027147A
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South Korea
Prior art keywords
pulse
generating
pulse signals
generated
pulse signal
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KR1019940010743A
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KR0169276B1 (ko
Inventor
야스히사 다케야마
준이치 미야모토
요시히사 이와타
히로노리 반바
히데코 오오다이라
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사토 후미오
가부시키가이샤 도시바
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073Charge pumps of the Schenkel-type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/15Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
    • H03K5/15013Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with more than two outputs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/15Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors
    • H03K5/151Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs
    • H03K5/1515Arrangements in which pulses are delivered at different times at several outputs, i.e. pulse distributors with two complementary outputs non-overlapping
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/156Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
    • H03K5/1565Arrangements in which a continuous pulse train is transformed into a train having a desired pattern the output pulses having a constant duty cycle

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
  • Logic Circuits (AREA)

Abstract

본 발명은 조건이 변화해도 정상인 펄스신호를 발생시킬 수 있는 회로를 구비한 반도체 회로장치 및 그 펄스 생성방법을 제공하도록 하는 것이다.
기본 펄스(Q0, Q1)에 기초해서 서로 위상이 다른 펄스신호(Φ1-Φ4)를 생성하는 펄스신호 생성회로(16-1)와, 펄스신호(Φ1∼Φ4)에 의해 구동되는 차지 펌프회로를 구비한다. 그리고, 생성회로(16-1)를 기본 펄스(Q0, Q1)를 카운트하고, 이 카운트 내용에 기초해서 펄스신호(Φ1∼Φ4)를 생성하도록 구성한 것을 중요한 특징으로 하고 있다. 이 구성이라면, 기본 펄스(Q0, Q1)를 카운트하고, 펄스신호(Φ1∼Φ4)를 생성하기 때문에 조건의 변화 예컨대, 기본펄스의 주파수가 변화해도 각 펄스신호(Φ1∼Φ4)의 동작 타이밍이 항상 일정한 비율로 된다. 따라서 조건이 변화해도 종래와 같이 펄스신호의 매칭이 붕괴되고 목적이 다른 펄스파형 패턴이 발생하거나 하지않고, 항상 정상인 펄스를 생성할 수 있다.

Description

반도체 회로장치 및 그 펄스 생성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 반도체 회로장치가 구비된 구동회로의 회로도, 제2도는 제1도에 나타낸 카운터회로 회로도, 제3도는 본 발명의 제1실시예에 따른 반도체 회로장치 개략적인 구성을 나타낸 블록도.

Claims (2)

  1. 입력신호를 기초로 서로 위상이 다른 복수의 펄스신호를 생성하는 생성수단(14-1∼14-5)과, 상기 복수의 펄스신호에 의해 구동되는 승압수단(12-1∼12-3)을 구비하여 구성되고, 상기 생성수단(14-1∼14-5)이 상기 입력신호를 카운트하고, 이 카운트 내용을 기초로 상기 복수의 펄스신호를 생성하도록 구성된 것을 특징으로 하는 반도체 회로장치.
  2. 발진호로로부터 발진출력을 카운트함으로써 서로 위상이 다른 복수의 펄스를 펄스폭이 일정한 비율을 유지하도록 생성하는 것을 특징으로 하는 펄스 생성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940010743A 1993-05-19 1994-05-17 반도체 회로장치 KR0169276B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-117274 1993-05-19
JP11727493A JP3643385B2 (ja) 1993-05-19 1993-05-19 半導体回路装置

Publications (2)

Publication Number Publication Date
KR940027147A true KR940027147A (ko) 1994-12-10
KR0169276B1 KR0169276B1 (ko) 1999-02-01

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US (1) US5734286A (ko)
JP (1) JP3643385B2 (ko)
KR (1) KR0169276B1 (ko)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793246A (en) * 1995-11-08 1998-08-11 Altera Corporation High voltage pump scheme incorporating an overlapping clock
JPH1145978A (ja) * 1997-07-28 1999-02-16 Toshiba Microelectron Corp 半導体記憶装置及び電圧発生回路
US6469558B1 (en) * 2000-04-25 2002-10-22 Agilent Technologies, Inc. Electrically adjustable pulse delay circuit
JP4158856B2 (ja) 2003-04-17 2008-10-01 松下電器産業株式会社 昇圧電源回路
KR100583963B1 (ko) * 2004-02-02 2006-05-26 삼성전자주식회사 고전압 발생회로 및 이를 이용한 반도체 메모리 장치
JP2007135388A (ja) * 2005-10-14 2007-05-31 Rohm Co Ltd 半導体装置とそれを用いた電源装置および撮像装置
US8044705B2 (en) * 2007-08-28 2011-10-25 Sandisk Technologies Inc. Bottom plate regulation of charge pumps
US7969235B2 (en) * 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7795952B2 (en) * 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) * 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US8094505B2 (en) * 2009-10-09 2012-01-10 Intel Corporation Method and system to lower the minimum operating voltage of a memory array
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US20110148509A1 (en) * 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US9214859B2 (en) * 2012-04-30 2015-12-15 Macronix International Co., Ltd. Charge pump system
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
EP2827483A1 (en) * 2013-07-15 2015-01-21 Infineon Technologies AG Circuitry, multi-branch charge pump, method for controlling a charge pump and system
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9881654B2 (en) 2015-01-14 2018-01-30 Macronix International Co., Ltd. Power source for memory circuitry
US9536575B2 (en) 2015-01-14 2017-01-03 Macronix International Co., Ltd. Power source for memory circuitry
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US11764673B2 (en) * 2021-03-03 2023-09-19 Stmicroelectronics International N.V. NMOS-based negative charge pump circuit
US11569738B1 (en) * 2021-09-29 2023-01-31 Globalfoundries U.S. Inc. Multi-stage charge pump with clock-controlled initial stage and shifted clock-controlled additional stage

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4014352A (en) * 1974-09-09 1977-03-29 Rothmans Of Pall Mall Canada Limited Apparatus for automatically controlling the initiation and/or termination of functions of apparatus or processes using a clock pulse generator
US4345211A (en) * 1980-09-15 1982-08-17 Rockwell International Corporation Digital phaselock demodulator
US4438346A (en) * 1981-10-15 1984-03-20 Advanced Micro Devices, Inc. Regulated substrate bias generator for random access memory
JPS6133575U (ja) * 1984-07-28 1986-02-28 ソニー株式会社 クロツク形成回路
US4882505A (en) * 1986-03-24 1989-11-21 International Business Machines Corporation Fully synchronous half-frequency clock generator
JPH01149516A (ja) * 1987-12-04 1989-06-12 Mitsubishi Electric Corp クロック発生装置
JP2805210B2 (ja) * 1989-06-09 1998-09-30 日本テキサス・インスツルメンツ株式会社 昇圧回路
JP2795323B2 (ja) * 1989-06-14 1998-09-10 富士通株式会社 位相差検出回路
US5039950A (en) * 1989-07-20 1991-08-13 Eastman Kodak Company Multiple clock synthesizer
GB8924203D0 (en) * 1989-10-27 1989-12-13 Ncr Co Delay measuring circuit
JP2575956B2 (ja) * 1991-01-29 1997-01-29 株式会社東芝 基板バイアス回路
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
US5230013A (en) * 1992-04-06 1993-07-20 Motorola, Inc. PLL-based precision phase shifting at CMOS levels
JP3170038B2 (ja) * 1992-05-19 2001-05-28 株式会社東芝 不揮発性半導体記憶装置
US5315270A (en) * 1992-08-28 1994-05-24 At&T Bell Laboratories Phase-locked loop system with compensation for data-transition-dependent variations in loop gain
US5343167A (en) * 1993-02-03 1994-08-30 Silicon Systems, Inc. One-shot control circuit for tracking a voltage-controlled oscillator
US5351015A (en) * 1993-02-03 1994-09-27 Silicon Systems, Inc. Time based data separator zone change sequence
US5317283A (en) * 1993-06-08 1994-05-31 Nokia Mobile Phones, Ltd. Method to reduce noise in PLL frequency synthesis
US5394443A (en) * 1993-12-23 1995-02-28 Unisys Corporation Multiple interval single phase clock

Also Published As

Publication number Publication date
JP3643385B2 (ja) 2005-04-27
KR0169276B1 (ko) 1999-02-01
JPH06335237A (ja) 1994-12-02
US5734286A (en) 1998-03-31

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