KR940018984A - 다이나믹형 램(ram)과 그것을 이용한 정보처리 시스템 - Google Patents

다이나믹형 램(ram)과 그것을 이용한 정보처리 시스템 Download PDF

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Publication number
KR940018984A
KR940018984A KR1019940001137A KR19940001137A KR940018984A KR 940018984 A KR940018984 A KR 940018984A KR 1019940001137 A KR1019940001137 A KR 1019940001137A KR 19940001137 A KR19940001137 A KR 19940001137A KR 940018984 A KR940018984 A KR 940018984A
Authority
KR
South Korea
Prior art keywords
mosfet
pair
switch
complementary bit
bit lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019940001137A
Other languages
English (en)
Korean (ko)
Inventor
마사유키 나카무라
다카유키 가와하라
카즈히코 카지가야
카즈요시 오오시마
쓰기오 다카하시
히로시 오오토리
데쓰로오 마쓰모토
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치 세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5028599A external-priority patent/JPH06223571A/ja
Priority claimed from JP5028598A external-priority patent/JPH06223570A/ja
Application filed by 가나이 쓰토무, 가부시키가이샤 히타치 세이사쿠쇼 filed Critical 가나이 쓰토무
Publication of KR940018984A publication Critical patent/KR940018984A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019940001137A 1993-01-25 1994-01-21 다이나믹형 램(ram)과 그것을 이용한 정보처리 시스템 Withdrawn KR940018984A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP93-28598 1993-01-25
JP5028599A JPH06223571A (ja) 1993-01-25 1993-01-25 半導体集積回路装置
JP5028598A JPH06223570A (ja) 1993-01-25 1993-01-25 ダイナミック型ｒａｍとそれを用いた情報処理システム
JP93-28599 1993-01-25

Publications (1)

Publication Number Publication Date
KR940018984A true KR940018984A (ko) 1994-08-19

Family

ID=26366740

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940001137A Withdrawn KR940018984A (ko) 1993-01-25 1994-01-21 다이나믹형 램(ram)과 그것을 이용한 정보처리 시스템

Country Status (4)

Country Link
US (1) US5426603A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR940018984A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1092898A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW235363B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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Also Published As

Publication number Publication date
US5426603A (en) 1995-06-20
TW235363B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-12-01
CN1092898A (zh) 1994-09-28

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19940121

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PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid