KR940016050A - 광자기 기록 매체용 타겟 및 그 제조방법 - Google Patents

광자기 기록 매체용 타겟 및 그 제조방법 Download PDF

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KR940016050A
KR940016050A KR1019930028168A KR930028168A KR940016050A KR 940016050 A KR940016050 A KR 940016050A KR 1019930028168 A KR1019930028168 A KR 1019930028168A KR 930028168 A KR930028168 A KR 930028168A KR 940016050 A KR940016050 A KR 940016050A
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가오루 마스다
슈니찌로 마쯔모또
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마쯔노 고오지
히다찌 긴조꾸 가부시끼가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G11B11/10589—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/1216—Continuous interengaged phases of plural metals, or oriented fiber containing

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Thin Magnetic Films (AREA)

Abstract

회토류 금속 및 이온족 금속의 공정 조직을 갖는 매트릭스상과, 순수 이온족 금속 또는 그의 합금으로 제조되고 200㎛ 이하의 평균 직경을 갖는 제1입자와, 내식성 향상 금속과 이온족 금속으로 제조되고 200㎛이하의 평균 직경을 갖는 제2입자로 구성된 미세조직을 갖는 광자기 기록매체용 타겟은 회토류 금속과 이온족 금속으로 제조되고 공정조직을 갖는 제1분말을, 순수 이온족 금속 또는 그의 합금으로 제조되고 200㎛이하의 평균 직경을 갖는 제2분말 및, 내식성 향상 금속과 이온족 금속으로 제조되고 200㎛ 이하의 평균 직경을 갖는 제3분말과 혼합하여 급냉시키고, 액상 출현 온도보다 조금 낮은 온도에서 최종적으로 혼합된 분말을 가압 소결함으로써 제조된다.

Description

광자기 기록 매체용 타겟 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명(예2)의 타겟의 미세 구조를 나타내는 100배 비율의 현미경 사진, 제2도는 본 발명(예5)의 타겟의 미세 구조를 나타내는 100배 비율의 현미경 사진, 제3도는 본 발명의 타겟의 미세 구조를 도시하는 개략도.

Claims (7)

  1. 200㎛이하의 평균 직경을 갖고 순수한 이온족 금속 또는 그의 합금으로 형성되는 제1입자와, 200㎛이하의 평균 직경을 갖고 Ti, Au, Cu, Cr, Nb, Ta, Pd 및 Pt로 구성된 그룹에서 선택된 하나이상의 금속과 하나 이상의 이온족 금속으로 형성되는 제2입자가 내부에 균일하게 분산되어 있고, 매트릭스 상으로서, 하나이상의 희토류 금속과 하나 이상의 이온족 금속을 갖는 미세 조직을 갖고 25이하의 최대 투자율을 갖는 소결체로 구성되는 것을 특징으로 하는 광자기 기록 매체용 타겟.
  2. 제1항에 있어서, 상기 제1 및 제2입자는 각각 125㎛이하의 평균 직경을 갖는 것을 특징으로 하는 광자기 기록 매체용 타겟.
  3. 제1항에 있어서, 상기 타겟은 10,000G이하의 포화 자기화(4πIs)를 갖는 것을 특징으로 하는 광자기 기록 매체용 타겟.
  4. 제1항에 있어서, 상기 제1 및 제2입자의 각각의 평균 직경은 상기 제1 및 제2입자 혼합물의 평균직경과 관련하여 20% 이내의 허용오차를 갖는 것을 특징으로 하는 광자기 기록 매체용 타겟.
  5. 제1항에 있어서, 공정 조직과 제1 및 제2입자 사이에 30㎛이하의 두께를 갖는 결합상이 제공되어 있는 것을 특징으로 하는 광자기 기록 매체용 타겟.
  6. 공정 조직을 갖는 제1분말을 형성하도록 하나 이상의 회토류 금속과 하나 이상의 이온족 금속으로 형성된 용융물을 급냉하는 단계와, 순수한 이온족 금속 또는 그의 합금으로 형성되고 200㎛ 이하의 평균 직경을 갖는 제2분말과, Ti, Au, Cu, Cr, Nb, Ta, Pd 및 Pt로 구성된 그룹으로부터 선택된 하나 이상의 금속과 하나 이상의 이온족 금속으로 형성되고 200㎛이하의 평균 직경을 갖는 제3분말을 상기 제1분말과 혼합하는 단계와, 상기 혼합 분말을 액상 출현 온도보다 낮은 온도에서 가압 소결하는 단계를 포함하는 것을 특징으로 하는 광자기 기록 매체용 타겟 제조 방법.
  7. 제6항에 있어서, 상기 제1 및 제2 및 제3분말은 각각 제1, 제2 및 제3분말 혼합물의 평균 직경과 관련하여 20% 이내의 허용오차를 갖는 평균 직경을 갖는 것을 특징으로 하는 광자기 기록 매체용 타겟 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930028168A 1990-12-17 1993-12-17 광자기 기록 매체용 타겟 및 그 제조 방법 KR0129795B1 (ko)

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JP92-355007 1990-12-17
JP4355007A JPH06184740A (ja) 1992-12-17 1992-12-17 光磁気記録媒体用ターゲットおよびその製造方法

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US (1) US5447801A (ko)
EP (1) EP0603750B1 (ko)
JP (1) JPH06184740A (ko)
KR (1) KR0129795B1 (ko)
DE (1) DE69323971T2 (ko)

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JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
US6055140A (en) * 1997-07-25 2000-04-25 Seagate Technology, Inc. Rigid disc plastic substrate with high stiffness insert
JP4491844B2 (ja) * 1998-07-24 2010-06-30 東ソー株式会社 スパッタリングターゲット
US6682636B2 (en) * 2000-08-18 2004-01-27 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
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US20070007505A1 (en) * 2005-07-07 2007-01-11 Honeywell International Inc. Chalcogenide PVD components
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US7488526B2 (en) 2005-11-22 2009-02-10 Ricoh Company, Ltd. Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor
US20080112878A1 (en) * 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
US20080202916A1 (en) * 2007-02-22 2008-08-28 Heraeus Incorporated Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements
JP2009203537A (ja) * 2008-02-29 2009-09-10 Hitachi Metals Ltd Ｃｏ−Ｆｅ系合金スパッタリングターゲット材およびその製造方法
JP5418897B2 (ja) * 2008-08-04 2014-02-19 日立金属株式会社 Ｃｏ−Ｆｅ系合金スパッタリングターゲット材の製造方法
JP5403418B2 (ja) * 2008-09-22 2014-01-29 日立金属株式会社 Ｃｏ−Ｆｅ−Ｎｉ系合金スパッタリングターゲット材の製造方法
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JP2894695B2 (ja) * 1988-03-30 1999-05-24 日立金属株式会社 希土類金属−鉄族金属ターゲットおよびその製造方法
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JPH05320888A (ja) * 1992-05-20 1993-12-07 Hitachi Metals Ltd 光磁気記録媒体用ターゲット

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Publication number Publication date
EP0603750A1 (en) 1994-06-29
JPH06184740A (ja) 1994-07-05
DE69323971T2 (de) 1999-08-05
DE69323971D1 (de) 1999-04-22
KR0129795B1 (ko) 1998-04-07
EP0603750B1 (en) 1999-03-17
US5447801A (en) 1995-09-05

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