KR960705957A - 자기 광학 합금 스퍼터 타깃(Magneto-optical alloy sputter targets) - Google Patents

자기 광학 합금 스퍼터 타깃(Magneto-optical alloy sputter targets) Download PDF

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KR960705957A
KR960705957A KR1019960702608A KR19960702608A KR960705957A KR 960705957 A KR960705957 A KR 960705957A KR 1019960702608 A KR1019960702608 A KR 1019960702608A KR 19960702608 A KR19960702608 A KR 19960702608A KR 960705957 A KR960705957 A KR 960705957A
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target
rare earth
transition metal
alloy
particles
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알. 막스 다니엘
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터그럴 야사
머티리얼즈 리서치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
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Abstract

자기 광학 스퍼터 타깃은 회토류 원소 하나 이상과 전이금속 하나 이상을 포함하는 조성물을 함유하고, 전이 금속 성분, 및 회토류상 빛 회토류/전이금속 내부금속 화합물의 미세혼합 합금 성분을 포함하는 구조물을 갖는다. 본 타깃의 구조물은 최소량의 내부금속 화합물을 함유한다. 당해 스퍼터타깃을 제조하는 방법은 전기금속성분(바람직하게는 합금화된 전이금속만의 입자)을 미세 혼합 합금의 입자와 혼합시켜 분말블렌드를 생성하는 단계 및 일정 시간, 정온 및 정압에서 산화억제 환경하에서 분말 블렌드를 압출 조작에 적용시켜 타깃의 회토류/전이금속 내부금속 화합물의 함량을 최소화하는 단계를 포함한다.

Description

자기 광학 합금 스퍼터 타깃(Magneto-optical alloy sputter targets)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 실시예 1,2 및 3으로부터 스퍼터링된 MO 합금 필름에 대한 포화 보자력을 나타낸 그래프이다.

Claims (29)

  1. 회토류 원소 하나 이상 및 전이금속 하나 이상을 포함하는 조성물을 함유하고, 전이금속 성분, 및 회토류상과 회토류/전이금속 내부금속 화합물의 미세 혼합 합금 성분을 갖는 구조물을 갖고, 내부금속 화합물을 최대 약 15중량%까지 함유하는, 자기 광학 기록 매체를 제조하기 위한 합금 타깃.
  2. 제 1항에 있어서, 내부금속 화합물을 최대 약 10중량%까지 함유하는 타깃.
  3. 제 1항에 있어서, 내부금속 화합물을 최대 약 5중량%까지 함유하는 타깃.
  4. 제 1항에 있어서, 결합 계면을 따라 상호 결합된 구조물의 성분에 회토류/전이금속 내부금속 화합물 확산 생성물이 실질적으로 존재하지 않는 타깃.
  5. 제 1항에 있어서, 구조물이 상당량의 원소 회토류 성분을 포함하는 타깃.
  6. 제 1항에 있어서, 구조물이 상이한 회토류 원소 둘 이상의 합금 성분을 포함하는 타깃.
  7. 제 1항에 있어서, 전이금속 성분이 전이금속 합금 형태로 존재하고 구조물이 합금화되지 않은 전이금속을 실질적으로 포함하지 않는 타깃.
  8. 제 1항에 있어서, 구조물이 상이한 전이금속 둘 이상의 합금을 포함하는 타깃.
  9. 제 1항에 있어서, 구조물이 하나 이상의 내식성 개선원소와 합금화된 전이금속이 포함하는 타깃.
  10. 제 1항에 있어서, 미세 혼합 합금이 회토류/전이금속공 합금을 포함하는 타깃.
  11. 제 1항에 있어서, 미세 혼합 합금이 회토류 매트릭스를 포함하는 타깃.
  12. 하나 싱의 회토류 원소와 하나 이상의 전이금속을 포함하는 조성물을 함유하고, 전이금속 합금, 및 회토류 상과 회토류/전이금속 내부금속 화합물의 이세 혼합 합금을 포함하는 다수의 성분의구조물[구조물은 합금화되지 않은 성문을 실질적으로 함유하지 않으며, 확산 계면을 따라 상호 결합된 구조물의 성분은 회토류/전이금속 내부금속 화합물 확산 생성물이 실질적으로 존재하지 않는다]을 갖는, 자기 광학기록 매체를 제조하기 위한 합금 타깃.
  13. 제 12항에 있어서, 구조물이 상당량의 회토류 성분을 포함하는 타깃.
  14. 제 12항에 있어서, 다수의 성분이 상이한 회토류 원소 둘 이상의 합금을 포함하는 타깃.
  15. 제 12항에 있어서, 다수의 성분이 상이한 전이금속 둘 이상의 합금을 포함하는 타깃.
  16. 제 12항에 있어서, 다수의 성분이 내식성 개선 원소 하나 이상과 합금화된 전이금속을 포함하는 타깃.
  17. 제 12항에 있어서, 내부금속 화합물을 최대 약 15중량%까지 함유하는 타깃.
  18. 제 12항에 있어서, 내부금속 화합물 확산 생성물을 최대 약 10중량%까지 함유하는 타깃.
  19. 제 12항에 있어서, 내부금속 화합물을 최대 약 5중량%까지 함유하는 타깃.
  20. 제 12항에 있어서, 미세 혼합 합금이 회토류/전이금속공용 합금을 포함하는 타깃.
  21. 제 12항에 있어서, 미세 혼합 합금이 회토류 매트릭스를 포함하는 타깃.
  22. 회토류 상 및 회토류/전이금속 내부금속 화합물의 미세혼합 합금 성분 하나 이상 및 전이금속 성분 하나 이상을 입자형태로 제공하는 단계; 입자를 혼합하여 분말 블렌드를 생성하는 단계; 및 일정시간, 정온 및 정압에서 산화 억제환경하에서 분말 블렌드를 압축 조작에 적용시켜 회토류/전이금속 내부금속 화합물을 최대 약 15중량%까지 함유하느 타깃을 제조하는 단게르르포함하여, 자기 광학 기록 매체를 형성히기 위한 합금 타깃을 제조하는 방법.
  23. 제 22항에 있어서, 타깃이 내부금속 화합물을 최대 약 10중량%까지의 함유하는 방법.
  24. 제 22항에 있어서, 타깃이 내부금속 화합물을 최대 약 5중량%까지의 함유하는 방법.
  25. 제 22항에 있어서, 전이금속 성분 하나 이상이 합금화되지 않은 전이금속의 입자를 거의 함유하지 않는 분말 블렌드와의 합금으로 존재하는 방법.
  26. 제 25항에 있어서, 상당량의 원소 회토류 금속 하나 이상의 입자를 제공하는 단계, 미세 혼합 합금 하나 이상의 입자 및 전이금속 합금 하나 이상과 원소 회토류 입자를 혼합하여 분말 블렌드를 생성하는 단계를 포함하는 방법.
  27. 제 25항에 있어서, 회토류/회토류 합금 하나 이상의 입자를 제공하는 단계, 미세 혼합 합금 하나 이상 및 전이금속 합금 하나 이상과 회토류/회토류 합금 입자를 혼합하여 분말 블렌드를 생성하는 단계를 포함하는 방법.
  28. 제 22항에 있어서, 미세 혼합 합금 하나 이상의 입자가 회토류/전이금속 공융 합금을 포함하는 방법.
  29. 제 22항에 있어서, 미세 혼합 합금 하나 이상의 입자가 회토류 매트릭스를 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960702608A 1993-12-02 1994-11-22 자기광학기록매체제조용합금타깃 KR100351778B1 (ko)

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Application Number Priority Date Filing Date Title
US08/161143 1993-12-02
US08/161,143 US5439500A (en) 1993-12-02 1993-12-02 Magneto-optical alloy sputter targets
US08/161,143 1993-12-02
PCT/US1994/013401 WO1995015407A1 (en) 1993-12-02 1994-11-22 Magneto-optical alloy sputter targets

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KR960705957A true KR960705957A (ko) 1996-11-08
KR100351778B1 KR100351778B1 (ko) 2002-12-26

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US (1) US5439500A (ko)
EP (1) EP0730669B1 (ko)
JP (2) JP3662251B2 (ko)
KR (1) KR100351778B1 (ko)
CN (1) CN1072733C (ko)
AU (1) AU1211095A (ko)
CA (1) CA2174433C (ko)
DE (1) DE69425833T2 (ko)
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CN1136331A (zh) 1996-11-20
JPH09506141A (ja) 1997-06-17
JP2005171380A (ja) 2005-06-30
EP0730669A1 (en) 1996-09-11
CA2174433C (en) 2004-07-20
WO1995015407A1 (en) 1995-06-08
US5439500A (en) 1995-08-08
AU1211095A (en) 1995-06-19
DE69425833T2 (de) 2001-03-29
DE69425833D1 (de) 2000-10-12
TW251320B (ko) 1995-07-11
JP3662251B2 (ja) 2005-06-22
CA2174433A1 (en) 1995-06-08
KR100351778B1 (ko) 2002-12-26
EP0730669B1 (en) 2000-09-06
CN1072733C (zh) 2001-10-10

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