TW251320B - - Google Patents

Info

Publication number
TW251320B
TW251320B TW083104964A TW83104964A TW251320B TW 251320 B TW251320 B TW 251320B TW 083104964 A TW083104964 A TW 083104964A TW 83104964 A TW83104964 A TW 83104964A TW 251320 B TW251320 B TW 251320B
Authority
TW
Taiwan
Application number
TW083104964A
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Application granted granted Critical
Publication of TW251320B publication Critical patent/TW251320B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
TW083104964A 1993-12-02 1994-05-31 TW251320B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/161,143 US5439500A (en) 1993-12-02 1993-12-02 Magneto-optical alloy sputter targets

Publications (1)

Publication Number Publication Date
TW251320B true TW251320B (zh) 1995-07-11

Family

ID=22579992

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104964A TW251320B (zh) 1993-12-02 1994-05-31

Country Status (10)

Country Link
US (1) US5439500A (zh)
EP (1) EP0730669B1 (zh)
JP (2) JP3662251B2 (zh)
KR (1) KR100351778B1 (zh)
CN (1) CN1072733C (zh)
AU (1) AU1211095A (zh)
CA (1) CA2174433C (zh)
DE (1) DE69425833T2 (zh)
TW (1) TW251320B (zh)
WO (1) WO1995015407A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
US5989673A (en) * 1997-06-30 1999-11-23 Sony Corporation Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
US20080112878A1 (en) * 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
JP5198925B2 (ja) * 2008-04-10 2013-05-15 三井金属鉱業株式会社 スパッタリングターゲット
US11149343B2 (en) * 2015-05-28 2021-10-19 Materion Corporation Processes for refurbishing a spent sputtering target
CN105803406B (zh) * 2016-03-14 2019-04-09 无锡舒玛天科新能源技术有限公司 一种磁光记录介质镀膜用稀土过渡合金旋转靶材的制备方法及其制备靶材
CN107449648B (zh) * 2017-06-30 2019-09-27 中国科学院广州地球化学研究所 一种适用于二次离子质谱仪分析的矿石矿物的样品靶的制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615911A (en) * 1969-05-16 1971-10-26 Bell Telephone Labor Inc Sputtered magnetic films
US3856579A (en) * 1972-12-04 1974-12-24 Battelle Development Corp Sputtered magnetic materials comprising rare-earth metals and method of preparation
US4367257A (en) * 1980-04-16 1983-01-04 Fuji Photo Film Co., Ltd. Thin magnetic recording medium
JPS60230903A (ja) * 1984-05-01 1985-11-16 Daido Steel Co Ltd 合金タ−ゲツトの製造方法
US4620872A (en) * 1984-10-18 1986-11-04 Mitsubishi Kinzoku Kabushiki Kaisha Composite target material and process for producing the same
JPH0673197B2 (ja) * 1985-02-25 1994-09-14 株式会社東芝 光磁気記録媒体とその製造方法
JPS6270550A (ja) * 1985-09-20 1987-04-01 Mitsubishi Metal Corp タ−ゲツト材
FR2601175B1 (fr) * 1986-04-04 1993-11-12 Seiko Epson Corp Cible de pulverisation cathodique et support d'enregistrement utilisant une telle cible.
JPH0766584B2 (ja) * 1986-04-11 1995-07-19 富士写真フイルム株式会社 光磁気記録媒体の製造方法
JPS6324030A (ja) * 1986-06-26 1988-02-01 Res Dev Corp Of Japan 異方性希土類磁石材料およびその製造方法
DE3627775A1 (de) * 1986-08-16 1988-02-18 Demetron Verfahren zur herstellung von targets
JPH0768612B2 (ja) * 1987-04-20 1995-07-26 日立金属株式会社 希土類金属―鉄族金属ターゲット用合金粉末、希土類金属―鉄族金属ターゲット、およびそれらの製造方法
JPS63274764A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
JPS63274763A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
DE3738738C1 (en) * 1987-11-14 1989-01-26 Degussa Powder-metallurgical process for producing targets
DE3800449A1 (de) * 1988-01-09 1989-07-20 Leybold Ag Verfahren und einrichtung zur herstellung magnetooptischer, speicher- und loeschfaehiger datentraeger
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making
US4885134A (en) * 1988-08-22 1989-12-05 Eastman Kodak Company Sputtering target and method of preparing the same
JPH0784656B2 (ja) * 1988-10-15 1995-09-13 住友金属鉱山株式会社 光磁気記録用合金ターゲット
DE3935698C2 (de) * 1988-10-26 1995-06-22 Sumitomo Metal Mining Co Legierungstarget für die Herstellung eines magneto-optischen Aufzeichnungsmediums

Also Published As

Publication number Publication date
CA2174433A1 (en) 1995-06-08
EP0730669B1 (en) 2000-09-06
AU1211095A (en) 1995-06-19
KR100351778B1 (ko) 2002-12-26
EP0730669A1 (en) 1996-09-11
JP2005171380A (ja) 2005-06-30
WO1995015407A1 (en) 1995-06-08
DE69425833D1 (de) 2000-10-12
US5439500A (en) 1995-08-08
JPH09506141A (ja) 1997-06-17
CN1136331A (zh) 1996-11-20
CN1072733C (zh) 2001-10-10
KR960705957A (ko) 1996-11-08
CA2174433C (en) 2004-07-20
DE69425833T2 (de) 2001-03-29
JP3662251B2 (ja) 2005-06-22

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