KR940005887B1 - 전계효과 트랜지스터 및 그 제조방법 - Google Patents
전계효과 트랜지스터 및 그 제조방법 Download PDFInfo
- Publication number
- KR940005887B1 KR940005887B1 KR1019910003241A KR910003241A KR940005887B1 KR 940005887 B1 KR940005887 B1 KR 940005887B1 KR 1019910003241 A KR1019910003241 A KR 1019910003241A KR 910003241 A KR910003241 A KR 910003241A KR 940005887 B1 KR940005887 B1 KR 940005887B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- impurity region
- sidewall
- gate electrode
- conductive layer
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title claims description 6
- 238000000034 method Methods 0.000 title description 6
- 239000012535 impurity Substances 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 52
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 43
- 239000003990 capacitor Substances 0.000 description 26
- 238000009792 diffusion process Methods 0.000 description 22
- 239000013078 crystal Substances 0.000 description 17
- 230000007547 defect Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113634A JPH0817225B2 (ja) | 1990-04-27 | 1990-04-27 | 電界効果トランジスタを有する半導体装置およびその製造方法 |
| JP2-113634 | 1990-04-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910019229A KR910019229A (ko) | 1991-11-30 |
| KR940005887B1 true KR940005887B1 (ko) | 1994-06-24 |
Family
ID=14617209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910003241A KR940005887B1 (ko) | 1990-04-27 | 1991-02-28 | 전계효과 트랜지스터 및 그 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0817225B2 (ja) |
| KR (1) | KR940005887B1 (ja) |
| IT (1) | IT1247295B (ja) |
-
1990
- 1990-04-27 JP JP2113634A patent/JPH0817225B2/ja not_active Expired - Fee Related
-
1991
- 1991-02-28 KR KR1019910003241A patent/KR940005887B1/ko not_active IP Right Cessation
- 1991-04-23 IT ITMI911124A patent/IT1247295B/it active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI911124A0 (it) | 1991-04-23 |
| ITMI911124A1 (it) | 1992-10-23 |
| JPH0410652A (ja) | 1992-01-14 |
| IT1247295B (it) | 1994-12-12 |
| KR910019229A (ko) | 1991-11-30 |
| JPH0817225B2 (ja) | 1996-02-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080530 Year of fee payment: 15 |
|
| LAPS | Lapse due to unpaid annual fee |