ITMI911124A0 - Transistor ad effetto di campo avente regioni di impurita' di profondita' diverse e procedimento di fabbricazione di esso - Google Patents
Transistor ad effetto di campo avente regioni di impurita' di profondita' diverse e procedimento di fabbricazione di essoInfo
- Publication number
- ITMI911124A0 ITMI911124A0 IT91MI1124A ITMI911124A ITMI911124A0 IT MI911124 A0 ITMI911124 A0 IT MI911124A0 IT 91MI1124 A IT91MI1124 A IT 91MI1124A IT MI911124 A ITMI911124 A IT MI911124A IT MI911124 A0 ITMI911124 A0 IT MI911124A0
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect transistor
- impurity regions
- manufacturing procedure
- different depth
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2113634A JPH0817225B2 (ja) | 1990-04-27 | 1990-04-27 | 電界効果トランジスタを有する半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITMI911124A0 true ITMI911124A0 (it) | 1991-04-23 |
| ITMI911124A1 ITMI911124A1 (it) | 1992-10-23 |
| IT1247295B IT1247295B (it) | 1994-12-12 |
Family
ID=14617209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI911124A IT1247295B (it) | 1990-04-27 | 1991-04-23 | Transistor ad effetto di campo avente regioni di impurita' di profondita' diverse e procedimento di fabbricazione di esso |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0817225B2 (it) |
| KR (1) | KR940005887B1 (it) |
| IT (1) | IT1247295B (it) |
-
1990
- 1990-04-27 JP JP2113634A patent/JPH0817225B2/ja not_active Expired - Fee Related
-
1991
- 1991-02-28 KR KR1019910003241A patent/KR940005887B1/ko not_active IP Right Cessation
- 1991-04-23 IT ITMI911124A patent/IT1247295B/it active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR910019229A (ko) | 1991-11-30 |
| IT1247295B (it) | 1994-12-12 |
| KR940005887B1 (ko) | 1994-06-24 |
| JPH0410652A (ja) | 1992-01-14 |
| JPH0817225B2 (ja) | 1996-02-21 |
| ITMI911124A1 (it) | 1992-10-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted | ||
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970429 |