KR940002964A - 범위를 한정시켜 연삭한 변형(deformation)을 가진 반도체 웨이퍼 및 그 제조방법 - Google Patents
범위를 한정시켜 연삭한 변형(deformation)을 가진 반도체 웨이퍼 및 그 제조방법 Download PDFInfo
- Publication number
- KR940002964A KR940002964A KR1019930008986A KR930008986A KR940002964A KR 940002964 A KR940002964 A KR 940002964A KR 1019930008986 A KR1019930008986 A KR 1019930008986A KR 930008986 A KR930008986 A KR 930008986A KR 940002964 A KR940002964 A KR 940002964A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor wafer
- wafer
- grinding
- semiconductor
- manufacturing
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract 5
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
반도체웨이퍼(Semiconductor wafers)에 있어서, 일측면에 행하여진 필요한 코팅 또는 확산 처리로 응력에 의해 바람직스럽지 아니한 회전대칭변형이 얻어진다.
이와 대비하여 범위를 한정시켜 변형하며 그 변형이 고정에 의해 오프셋(Offset)되는 반도체웨이퍼를 일측면 코팅용으로 사용할 때, 바람직한 평면-평행면을 가진 반도체웨이퍼가 얻어진다.
이 발명은 범위를 한정시켜 연삭한 변형을 가진 이와같은 반도체웨이퍼와 이와같은 반도체 웨이퍼의 제조방법에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 크리스털로드(crystal rod)를 연삭하며 반도체웨이퍼를 절단하는 단면(end-kace)표면의 단면도,
제2도는 웨이퍼 픽업상에 제1표면-연삭면에 의한 반도체웨이퍼의 고정을 나타낸 단면 표면 설명도,
제3도는 웨이퍼 픽업의 회전축에 대하여 경사되어 있는 연삭공구의 회전축으로 반도체 웨이퍼를 연삭하는 단면표면의 상태도,
제4도는 제2표면에 의해 웨이퍼 픽업상에 반도체웨이퍼를 설정하는 단면표면의 상태도.
Claims (5)
- 범위를 한정시켜 연삭한 변형(범위를 한정시켜 연삭한 굽힘 : warp ground in a defined way)을 가진 반도체웨이퍼.
- 제1항에 있어서, 그 반도체웨이퍼는 웨이퍼표면의 회전대칭의 만곡(Curvature)과 웨이퍼대향면의 평행구성을 한 결과가 변형됨을 특징으로 하는 위 반도체웨이퍼.
- 제2항에 있어서, 그 웨이퍼면의 회전대칭의 만곡(rotaionally Symmetrical curvature)은 볼록형상(convex), 오목형상(concave) 또는 원뿔형상으로 구성함을 특징으로 하는 위 반도체웨이퍼.
- 로드형상 반도체결정 단면 (end face)에서 절단시킨 반도체웨이퍼에서 범위를 한정시켜 연삭한 변형(범위를 한정시켜 연삭한 굽힘)을 가진 반도체웨이퍼의 제조방법에 있어서, a) 그 반도체웨이퍼를 웨이퍼픽업상에서 제1면(first Surface)에 의해 고정시켜, 제1연삭공정에서 그 반도체웨이퍼의 대향한 제2면을 연삭시키고 그 연삭 공구와 웨이퍼픽업은 연삭중에 있을 때 회전시키며 그 연삭공구의 회전축은 그 웨이퍼픽업의 회전축에 대하여 하나 또는 둘의 공간방향으로 경사시키고, b) 제2연삭공정에서 웨이퍼픽업의 픽업면과 평행한 반도체웨이퍼의 제1면을 연삭하며 그 반도체웨이퍼의 제2면전체는 연삭중에 있을때 그 웨이퍼픽업에 접선방향으로 접촉시킴을 특징으로 하는 위 반도체웨이퍼의 제조방법.
- 제4항에 있어서, 그 반도체웨이퍼는 그 단면에서 표면연삭을 시킨 반도체결정에서 절단시키며, 그 얻어진 반도체웨이퍼의 표면 연삭면은 그 반도체웨이퍼의 제1면인을 특징으로 하는 위 반도체웨이퍼의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE92-P4224395 | 1992-07-23 | ||
DE4224395A DE4224395A1 (de) | 1992-07-23 | 1992-07-23 | Halbleiterscheiben mit definiert geschliffener Verformung und Verfahren zu ihrer Herstellung |
DE92-P4224395.5 | 1992-07-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940002964A true KR940002964A (ko) | 1994-02-19 |
KR970009861B1 KR970009861B1 (ko) | 1997-06-18 |
Family
ID=6463959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930008986A KR970009861B1 (ko) | 1992-07-23 | 1993-05-24 | 반도체 웨이퍼의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5400548A (ko) |
EP (1) | EP0580162B1 (ko) |
JP (1) | JP2582030B2 (ko) |
KR (1) | KR970009861B1 (ko) |
DE (2) | DE4224395A1 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4415132C2 (de) * | 1994-04-29 | 1997-03-20 | Siemens Ag | Verfahren zur formgebenden Bearbeitung von dünnen Wafern und Solarzellen aus kristallinem Silizium |
US5968849A (en) * | 1995-06-26 | 1999-10-19 | Motorola, Inc. | Method for pre-shaping a semiconductor substrate for polishing and structure |
US5821166A (en) * | 1996-12-12 | 1998-10-13 | Komatsu Electronic Metals Co., Ltd. | Method of manufacturing semiconductor wafers |
DE19722679A1 (de) * | 1997-05-30 | 1998-12-03 | Wacker Siltronic Halbleitermat | Scheibenhalter und Verfahren zur Herstellung einer Halbleiterscheibe |
JP2001516145A (ja) * | 1997-08-21 | 2001-09-25 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 半導体ウエハの加工方法 |
DE10009656B4 (de) * | 2000-02-24 | 2005-12-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
WO2002041380A1 (en) * | 2000-11-16 | 2002-05-23 | Shin-Etsu Handotai Co.,Ltd. | Wafer shape evaluating method and device and device producing method, wafer and wafer selecting method |
JP3838341B2 (ja) * | 2001-09-14 | 2006-10-25 | 信越半導体株式会社 | ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法 |
DE10147634B4 (de) * | 2001-09-27 | 2004-07-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
FR2848336B1 (fr) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
DE102005012446B4 (de) * | 2005-03-17 | 2017-11-30 | Siltronic Ag | Verfahren zur Material abtragenden Bearbeitung einer Halbleiterscheibe |
DE102005045338B4 (de) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102005045339B4 (de) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102005045337B4 (de) * | 2005-09-22 | 2008-08-21 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102008026784A1 (de) * | 2008-06-04 | 2009-12-10 | Siltronic Ag | Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung |
DE102008059044B4 (de) * | 2008-11-26 | 2013-08-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
DE102009004557B4 (de) * | 2009-01-14 | 2018-03-08 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102009010556B4 (de) * | 2009-02-25 | 2013-11-07 | Siltronic Ag | Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
DE102009025242B4 (de) * | 2009-06-17 | 2013-05-23 | Siltronic Ag | Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe |
DE102009038941B4 (de) | 2009-08-26 | 2013-03-21 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009048436B4 (de) * | 2009-10-07 | 2012-12-20 | Siltronic Ag | Verfahren zum Schleifen einer Halbleiterscheibe |
DE102009051008B4 (de) * | 2009-10-28 | 2013-05-23 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010005904B4 (de) * | 2010-01-27 | 2012-11-22 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010014874A1 (de) | 2010-04-14 | 2011-10-20 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
CN103551957B (zh) * | 2013-11-01 | 2016-04-20 | 苏州辰轩光电科技有限公司 | 单面抛光机 |
JP7035777B2 (ja) * | 2017-06-02 | 2022-03-15 | 信越化学工業株式会社 | 半導体用基板およびその製造方法 |
CN110125730A (zh) * | 2018-02-07 | 2019-08-16 | 蓝思科技(长沙)有限公司 | 陶瓷盖板的平面度矫正方法和平面度矫正设备 |
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NL8337C (ko) * | 1915-11-01 | |||
US2699633A (en) * | 1949-02-09 | 1955-01-18 | Optron Lab | Precision supporting of articles |
FR2013944A1 (ko) * | 1968-07-30 | 1970-04-10 | Thielenhaus Maschf | |
CH574612A5 (en) * | 1974-10-03 | 1976-04-15 | Celestron Pacific | Mfg. of Schmidt correction plate - uses thin glass plate placed over glass matrix block |
JPS6193614A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 半導体単結晶基板 |
DE3613132A1 (de) * | 1986-04-18 | 1987-10-22 | Mueller Georg Nuernberg | Verfahren zum zerteilen von harten, nichtmetallischen werkstoffen |
DE3771857D1 (de) * | 1986-12-08 | 1991-09-05 | Sumitomo Electric Industries | Flaechenschleifmaschine. |
DE3737540C1 (de) * | 1987-11-05 | 1989-06-22 | Mueller Georg Nuernberg | Verfahren und Maschine zum Herstellen von Ronden mit zumindest einer planen Oberflaeche |
DE3906091A1 (de) * | 1989-02-27 | 1990-08-30 | Wacker Chemitronic | Verfahren zum zersaegen von stabfoermigen werkstuecken in scheiben mittels innenlochsaege, sowie innenlochsaegen zu seiner durchfuehrung |
JPH0355822A (ja) * | 1989-07-25 | 1991-03-11 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板の製造方法 |
JPH0376119A (ja) * | 1989-08-17 | 1991-04-02 | Sumitomo Electric Ind Ltd | 曲面の研削方法 |
JP2535645B2 (ja) * | 1990-04-20 | 1996-09-18 | 富士通株式会社 | 半導体基板の製造方法 |
-
1992
- 1992-07-23 DE DE4224395A patent/DE4224395A1/de not_active Withdrawn
-
1993
- 1993-05-24 KR KR1019930008986A patent/KR970009861B1/ko not_active IP Right Cessation
- 1993-06-03 JP JP5156334A patent/JP2582030B2/ja not_active Expired - Lifetime
- 1993-07-07 US US08/088,171 patent/US5400548A/en not_active Expired - Lifetime
- 1993-07-22 EP EP93111758A patent/EP0580162B1/de not_active Expired - Lifetime
- 1993-07-22 DE DE59308969T patent/DE59308969D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2582030B2 (ja) | 1997-02-19 |
EP0580162B1 (de) | 1998-09-09 |
JPH06260459A (ja) | 1994-09-16 |
EP0580162A1 (de) | 1994-01-26 |
KR970009861B1 (ko) | 1997-06-18 |
DE4224395A1 (de) | 1994-01-27 |
US5400548A (en) | 1995-03-28 |
DE59308969D1 (de) | 1998-10-15 |
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