KR940001313A - How to remove small pocket - Google Patents

How to remove small pocket Download PDF

Info

Publication number
KR940001313A
KR940001313A KR1019920009646A KR920009646A KR940001313A KR 940001313 A KR940001313 A KR 940001313A KR 1019920009646 A KR1019920009646 A KR 1019920009646A KR 920009646 A KR920009646 A KR 920009646A KR 940001313 A KR940001313 A KR 940001313A
Authority
KR
South Korea
Prior art keywords
oxide film
film
etching
polysilicon film
small pocket
Prior art date
Application number
KR1019920009646A
Other languages
Korean (ko)
Other versions
KR960006341B1 (en
Inventor
박해성
이헌철
손곤
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920009646A priority Critical patent/KR960006341B1/en
Publication of KR940001313A publication Critical patent/KR940001313A/en
Application granted granted Critical
Publication of KR960006341B1 publication Critical patent/KR960006341B1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 에치백(etch-back) 기술을 이용한 단차상의 필름 잔류물 제거 방법에 관한 것으로, 특히 식각 공정 이전에 행하여 지는 세척 공정에 의한 언더컷(under cut)발생을 방지 하여 이때 이용된 식각잔류물을 제거 함으로써 고집적 소자 제조에 필요한 비등방성 식각의 적용에 용이하고 또한 식각 잔류물에 의한 소자의 손상을 막아 소자의 신뢰도를 증가시킬 수 있는 효과가 있다.The present invention relates to a method for removing a stepped film residue using an etch-back technique. In particular, an etching residue used to prevent undercuts caused by a washing process performed before an etching process is prevented. By removing the PSA, it is easy to apply anisotropic etching necessary for manufacturing a highly integrated device, and there is an effect of increasing the reliability of the device by preventing the device from being damaged by the etching residue.

Description

스몰포켓 제거 방법How to remove small pocket

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 식각 공정도.2 is an etching process chart according to the present invention.

Claims (2)

스몰포켓(small pocket) 제거 방법에 있어서, 산화막(1)상에 폴리실리콘막(2)을 증착시켜 상기 폴리실리콘막(2)에 불순물을 주입 하여 계획된 소정의 크기로 패턴 하여 식각하는 제1공정, 상기 제1공정 후에 산화막(3)을 증착 하는 제2공정, 상기 제2공정 후에 상기 산화막(3)을 에치백 (etch back) 작업을 실시하여 상기 증착한 산화막(3)으로 잔류산화막(7)을 예상된 스몰포켓 크기로 형성 하는 제3공정, 및 상기 제3공정 후에 세척공정을 실시하고 산화막(8), 폴리실리콘막(4)을 순서적으로 증착하여 상기 폴리실리콘막(4)에 불순물을 주입하고 감광막 (5)으로 패턴을 형성하여 상기 폴리실리콘막(4)을 선택 식각 하는 제4공정을 구비함을 특징으로 하는 스몰포켓 제거방법.In a method of removing a small pocket, a first process of depositing a polysilicon film 2 on an oxide film 1, injecting impurities into the polysilicon film 2, and patterning and etching the polysilicon film 2 to a predetermined predetermined size And a second step of depositing the oxide film 3 after the first step, and performing a etch back operation on the oxide film 3 after the second step, thereby remaining the oxide film 7 as the deposited oxide film 3. ) And a washing step after the third step to form the expected small pocket size, and the oxide film 8 and the polysilicon film 4 are sequentially deposited on the polysilicon film 4. And a fourth step of selectively etching the polysilicon film (4) by implanting impurities and forming a pattern with the photosensitive film (5). 제1항에 있어서, 상기 제3공정에서의 잔류산화막(7)은 200Å이하의 두께로 증착되는 것을 특징으로 하는 스몰포켓 제거방법.The method of claim 1, wherein the residual oxide film (7) in the third step is deposited to a thickness of 200 kPa or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920009646A 1992-06-03 1992-06-03 Removing method of small pocket KR960006341B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920009646A KR960006341B1 (en) 1992-06-03 1992-06-03 Removing method of small pocket

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920009646A KR960006341B1 (en) 1992-06-03 1992-06-03 Removing method of small pocket

Publications (2)

Publication Number Publication Date
KR940001313A true KR940001313A (en) 1994-01-11
KR960006341B1 KR960006341B1 (en) 1996-05-13

Family

ID=19334142

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920009646A KR960006341B1 (en) 1992-06-03 1992-06-03 Removing method of small pocket

Country Status (1)

Country Link
KR (1) KR960006341B1 (en)

Also Published As

Publication number Publication date
KR960006341B1 (en) 1996-05-13

Similar Documents

Publication Publication Date Title
KR970030640A (en) Method of forming device isolation film in semiconductor device
KR940001313A (en) How to remove small pocket
KR960002742A (en) Manufacturing method of semiconductor device
KR940016887A (en) Method of forming fine gate electrode of semiconductor device
KR970023813A (en) Semiconductor device manufacturing method
KR970052879A (en) Manufacturing method of semiconductor device
KR960002703A (en) Semiconductor manufacturing method
KR930011212A (en) Semiconductor Cell Manufacturing Method Using Epi-Si Deposition
KR940016926A (en) Thin Film Transistor Manufacturing Method
KR940001278A (en) Contact Formation Method
KR940016543A (en) Removal method of natural oxide film on polysilicon layer
KR960005940A (en) Device isolation oxide film formation method
KR950007056A (en) Device isolation oxide film formation method of semiconductor device
KR960026555A (en) Method of forming device isolation layer of semiconductor device
KR980003884A (en) Resist Pattern Formation Method
KR960005811A (en) Polysilicon layer formation method of semiconductor device
KR940001297A (en) Polymer Removal Method
KR920001618A (en) Device isolation method using self-alignment
KR940009767A (en) Field oxide film formation method of a semiconductor device
KR900002420A (en) Method of forming high concentration source region and capacitor surface region of semiconductor device using selective sidewall doping technique (SSWDT)
KR960019521A (en) How to Form Plug for Metal Wiring
KR920013625A (en) Ion Implantation Method of Semiconductor Device
KR930001341A (en) Manufacturing Method of Semiconductor Device
KR970054409A (en) Manufacturing Method of Semiconductor Device
KR970018180A (en) Semiconductor device manufacturing method

Legal Events

Date Code Title Description
A201 Request for examination
B901 Examination by re-examination before a trial
E902 Notification of reason for refusal
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

G160 Decision to publish patent application
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110429

Year of fee payment: 16

EXPY Expiration of term